KR960032694A - Semiconductor devices - Google Patents

Semiconductor devices Download PDF

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Publication number
KR960032694A
KR960032694A KR1019950002807A KR19950002807A KR960032694A KR 960032694 A KR960032694 A KR 960032694A KR 1019950002807 A KR1019950002807 A KR 1019950002807A KR 19950002807 A KR19950002807 A KR 19950002807A KR 960032694 A KR960032694 A KR 960032694A
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KR
South Korea
Prior art keywords
group
semiconductor device
photopolymerizable
amount
silicon ladder
Prior art date
Application number
KR1019950002807A
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Korean (ko)
Inventor
에쯔시 아다찌
히소시 아다찌
시게유끼 야마모또
히로유끼 니시무리
신따로 미나미
도오루 다지마
히로시 도비마쯔
Original Assignee
기따오까 다까시
미쯔비시 덴끼 가부시끼사이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 기따오까 다까시, 미쯔비시 덴끼 가부시끼사이샤 filed Critical 기따오까 다까시
Priority to KR1019950002807A priority Critical patent/KR960032694A/en
Publication of KR960032694A publication Critical patent/KR960032694A/en

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Abstract

반도체 장치가 봉입하는 동안에 몰딩 수지에 의해 야기된 변형을 버퍼링하는데 효과적이며, 다음식(Ⅰ)로 표현되는 실리콘 사다리형 수지로 이루어진 변경-버퍼링막을 갖는데, 식(Ⅰ)에서 각각의 말단기 R은 같거나 다를 수 있으며 또한 알킬 그룹을 나타내고, 각각의 측면체인 R′은 같거나 다를 수 있으며 또한 수소 원자 또는 싸이클로헥실 그룹,저알킬 그룹, 또는 광중합성 불포화된 그룹을 나타내며, 그리고 n은 10 또는 그 이상의 정수이다.It is effective in buffering the deformation caused by the molding resin during encapsulation of the semiconductor device, and has a modified-buffered film made of a silicon ladder resin represented by the following formula (I), wherein each end group R in the formula (I) Which may be the same or different and also represent an alkyl group, each side R ′ may be the same or different and may also represent a hydrogen atom or a cyclohexyl group, a lowalkyl group, or a photopolymerizable unsaturated group, and n is 10 or its The above is an integer.

Description

반도체 장치Semiconductor devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1a도 내지 제1d도는 본 발명의 예제 1로서 반도체 장치를 제조하기 위한 공정의 단계를 기술하는 단면도.1A to 1D are cross-sectional views illustrating steps of a process for manufacturing a semiconductor device as Example 1 of the present invention.

Claims (6)

반도체 장치가 반도체 기판과, 이 기판에 형성된 소자 및, 상기 반도체 기판위에 증착되어, 다음식 (Ⅰ)로 표현되는 실리콘 사다리형 수지로 이루어진 변경-버퍼링막을 포함하는데, 이 식에서 각각의 말단기 R′은 같거나 다를수 있고 알킬(alkyl)그룹을 나타내고, 각각의 측면체인(side chain) R′은 같거나 다를 수 있고 또한 수소 원자나 싸이클로헥실(cyclohexl)그룹, 저알킬(alkyl)그룹, 또는 광중합성(photopolynerizabele) 불포화된 그룹을 나타내며, 그리고 n은 10 또는 그 이상의 정수인 것을 특징으로 하는 반도체 장치.A semiconductor device includes a semiconductor substrate, an element formed on the substrate, and a modified-buffer film made of a silicon ladder resin deposited on the semiconductor substrate and represented by the following formula (I), wherein each end group R ' May be the same or different and represent an alkyl group, and each side chain R ′ may be the same or different and may also be a hydrogen atom or a cyclohexl group, a low alkyl group, or a photopolymerizable (photopolynerizabele) A unsaturated semiconductor device, wherein n is an integer of 10 or more. 제1항에 있어서, 상기 각각의 말단기(end group) R은 알킬 그룹을 나타내는 것을 특징으로 하는 반도체 장치.The semiconductor device according to claim 1, wherein each end group R represents an alkyl group. 제1항에 있어서, 상기 각각의 말단기 R은 수소 원자를 나타내는 것을 특징으로 하는 반도체 장치.The semiconductor device according to claim 1, wherein each terminal group R represents a hydrogen atom. 제1항에 있어서, 상기 실리콘 사다리형 수지가 분자로서 전체 측면체인 그룹 R′총양을 기초로 한 3몰%도는 그 이상의 양으로 측면체인에서 광중합성 불포화되 는 그룹을 갖는 것을 특징으로 하는 반도체 장치.The semiconductor device according to claim 1, wherein the silicon ladder-type resin has a photopolymerizable unsaturated group in the side chain in an amount of 3 mol% or more based on the total amount of the group R 'as a molecule. . 제2항에 있어서, 상기 실리콘 사다리형 수지가 분자로서 전체 측면체인 그룹 R′총양을 기초로 한 3몰%도는 그 이상의 양으로 측면체인에서 광중합성 불포화되는 그룹을 갖는 반도체 장치.3. The semiconductor device according to claim 2, wherein the silicon ladder resin has a group that is photopolymerizable and unsaturated in the side chain in an amount of 3 mol% or more based on the total amount of the group R 'as a molecule. 제3항에 있어서, 상기 실리콘 사다리형 수지가 분자로서 전체 측면체인 그룹 R′의 총양을 기초로 한 3몰%또는 그 이상의 양으로 측면에서 광중합성 불포화된 그룹을 갖는 반도체 장치.4. The semiconductor device according to claim 3, wherein the silicon ladder resin has photopolymerizable unsaturated groups on the side in an amount of 3 mol% or more based on the total amount of the group R 'which is a whole side body as a molecule. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950002807A 1995-02-13 1995-02-13 Semiconductor devices KR960032694A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950002807A KR960032694A (en) 1995-02-13 1995-02-13 Semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950002807A KR960032694A (en) 1995-02-13 1995-02-13 Semiconductor devices

Publications (1)

Publication Number Publication Date
KR960032694A true KR960032694A (en) 1996-09-17

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KR1019950002807A KR960032694A (en) 1995-02-13 1995-02-13 Semiconductor devices

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