KR960025762A - Sensing Circuit of Flash Memory Cell - Google Patents

Sensing Circuit of Flash Memory Cell Download PDF

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Publication number
KR960025762A
KR960025762A KR1019940039482A KR19940039482A KR960025762A KR 960025762 A KR960025762 A KR 960025762A KR 1019940039482 A KR1019940039482 A KR 1019940039482A KR 19940039482 A KR19940039482 A KR 19940039482A KR 960025762 A KR960025762 A KR 960025762A
Authority
KR
South Korea
Prior art keywords
memory cell
flash memory
sensing circuit
current flowing
bit line
Prior art date
Application number
KR1019940039482A
Other languages
Korean (ko)
Inventor
하창완
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940039482A priority Critical patent/KR960025762A/en
Publication of KR960025762A publication Critical patent/KR960025762A/en

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Abstract

본 발명은 플래쉬 메모리셀의 센싱회로에 관한 것으로서, 프로그램 확인모드시 선택된 비트라인의 플래쉬 메모리셀의 전류외에 임의의 여분의 전류를 이용하여 센싱하도록 하므로써 독출시 센싱속도를 향상시키기 위한 센싱회로이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sensing circuit of a flash memory cell. The present invention relates to a sensing circuit for improving a sensing speed at the time of reading by using an extra current other than the current of a flash memory cell of a selected bit line in a program check mode.

Description

플래쉬 메모리셀의 센싱회로Sensing Circuit of Flash Memory Cell

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 플래쉬 메모리셀의 센싱회로도.2 is a sensing circuit diagram of a flash memory cell according to the present invention.

Claims (1)

전원단자를 입력으로 하는 레퍼런스 메모리셀의 레퍼런스라인으로 흐르는 전류와, 선택되는 워드라인에 의해 동작되는 플래쉬 메모리셀의 비트라인으로 흐르는 전류 및 상기 비트라인에 접속되며 프로그램 확인신호를 입력으로 하는 전류패스 메모리셀로 흐르는 전류의 차를 증폭하는 차동센스 증폭기로 구성되는 것을 특징으로 하는 플래쉬 메모리셀의 센싱회로.The current flowing through the reference line of the reference memory cell with the power terminal as input, the current flowing through the bit line of the flash memory cell operated by the selected word line, and the current path connected to the bit line with the program confirmation signal as an input. A sensing circuit of a flash memory cell, characterized in that consisting of a differential sense amplifier for amplifying the difference between the current flowing through the memory cell. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940039482A 1994-12-30 1994-12-30 Sensing Circuit of Flash Memory Cell KR960025762A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940039482A KR960025762A (en) 1994-12-30 1994-12-30 Sensing Circuit of Flash Memory Cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940039482A KR960025762A (en) 1994-12-30 1994-12-30 Sensing Circuit of Flash Memory Cell

Publications (1)

Publication Number Publication Date
KR960025762A true KR960025762A (en) 1996-07-20

Family

ID=66647878

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940039482A KR960025762A (en) 1994-12-30 1994-12-30 Sensing Circuit of Flash Memory Cell

Country Status (1)

Country Link
KR (1) KR960025762A (en)

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