KR960016831B1 - A method for manufacturing semiconductor device - Google Patents
A method for manufacturing semiconductor device Download PDFInfo
- Publication number
- KR960016831B1 KR960016831B1 KR93024621A KR930024621A KR960016831B1 KR 960016831 B1 KR960016831 B1 KR 960016831B1 KR 93024621 A KR93024621 A KR 93024621A KR 930024621 A KR930024621 A KR 930024621A KR 960016831 B1 KR960016831 B1 KR 960016831B1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- manufacturing semiconductor
- etch
- sog
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Element Separation (AREA)
Abstract
The method is for improving the reliability of a semiconductor device by solving the problem of the lifting phenomenon in the planarizing insulator. The method comprises the steps of: forming a SOG(Spin-On-Glass) layer(105) on top of a semiconductor substrate(101) having a not-plane surface; an etch-back of the SOG layer(105); and removing an unnecessary polymer(106) formed on the surface by the etch-back process using O2/CHF3 gas.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93024621A KR960016831B1 (en) | 1993-11-18 | 1993-11-18 | A method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93024621A KR960016831B1 (en) | 1993-11-18 | 1993-11-18 | A method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950015639A KR950015639A (en) | 1995-06-17 |
KR960016831B1 true KR960016831B1 (en) | 1996-12-21 |
Family
ID=19368417
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR93024621A KR960016831B1 (en) | 1993-11-18 | 1993-11-18 | A method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960016831B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019045210A1 (en) * | 2017-08-31 | 2019-03-07 | 삼성전자주식회사 | Dishwasher and home appliances |
-
1993
- 1993-11-18 KR KR93024621A patent/KR960016831B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019045210A1 (en) * | 2017-08-31 | 2019-03-07 | 삼성전자주식회사 | Dishwasher and home appliances |
Also Published As
Publication number | Publication date |
---|---|
KR950015639A (en) | 1995-06-17 |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20051109 Year of fee payment: 10 |
|
LAPS | Lapse due to unpaid annual fee |