KR960016243B1 - Dynamic ram and the manufacture method - Google Patents
Dynamic ram and the manufacture method Download PDFInfo
- Publication number
- KR960016243B1 KR960016243B1 KR92011729A KR920011729A KR960016243B1 KR 960016243 B1 KR960016243 B1 KR 960016243B1 KR 92011729 A KR92011729 A KR 92011729A KR 920011729 A KR920011729 A KR 920011729A KR 960016243 B1 KR960016243 B1 KR 960016243B1
- Authority
- KR
- South Korea
- Prior art keywords
- manufacture method
- dynamic ram
- ram
- dynamic
- manufacture
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0387—Making the trench
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP91-163166 | 1991-07-03 | ||
| JP16316691A JP3208153B2 (en) | 1991-07-03 | 1991-07-03 | Semiconductor device and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930003398A KR930003398A (en) | 1993-02-24 |
| KR960016243B1 true KR960016243B1 (en) | 1996-12-07 |
Family
ID=15768491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR92011729A KR960016243B1 (en) | 1991-07-03 | 1992-07-02 | Dynamic ram and the manufacture method |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3208153B2 (en) |
| KR (1) | KR960016243B1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3480745B2 (en) | 1993-09-16 | 2003-12-22 | 株式会社東芝 | Method for manufacturing semiconductor device |
| JP3214975B2 (en) * | 1994-04-25 | 2001-10-02 | 旭化成株式会社 | Ammoxidation catalyst composition and production method |
-
1991
- 1991-07-03 JP JP16316691A patent/JP3208153B2/en not_active Expired - Lifetime
-
1992
- 1992-07-02 KR KR92011729A patent/KR960016243B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP3208153B2 (en) | 2001-09-10 |
| KR930003398A (en) | 1993-02-24 |
| JPH0513707A (en) | 1993-01-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20081120 Year of fee payment: 13 |
|
| LAPS | Lapse due to unpaid annual fee |