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Application filed by Lg Semicon Co LtdfiledCriticalLg Semicon Co Ltd
Priority to KR93008435ApriorityCriticalpatent/KR960012578B1/en
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Publication of KR960012578B1publicationCriticalpatent/KR960012578B1/en
The method of manufacturing transistor comprises the steps of : forming a gate insulating layer(2), a gate(3) and a LDD region(4') by LDD ion injection(4) on a semiconductor substrate(1); forming a polyside wall(10) on the side wall of the gate(3) by depositing polysilicon and etchback, and forming a source(7)/ drain region(8) by injecting conductive ion(6); and forming a pocketing region(11,11') surrounding the LDD region(4') by diffusion from the polyside wall(10) after thermal processing.
KR93008435A1993-05-181993-05-18Semiconductor device having thin film transistor & method of manufacturing the same
KR960012578B1
(en)
Metal insulative semiconductor field effect transistor having a planar member and electrodes on its upper surface and method for manufacturing the same