KR960012214U - Address transition detection circuit in semiconductor memory - Google Patents

Address transition detection circuit in semiconductor memory

Info

Publication number
KR960012214U
KR960012214U KR2019940022714U KR19940022714U KR960012214U KR 960012214 U KR960012214 U KR 960012214U KR 2019940022714 U KR2019940022714 U KR 2019940022714U KR 19940022714 U KR19940022714 U KR 19940022714U KR 960012214 U KR960012214 U KR 960012214U
Authority
KR
South Korea
Prior art keywords
detection circuit
semiconductor memory
transition detection
address transition
address
Prior art date
Application number
KR2019940022714U
Other languages
Korean (ko)
Other versions
KR200177248Y1 (en
Inventor
안영창
Original Assignee
현대반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 현대반도체주식회사 filed Critical 현대반도체주식회사
Priority to KR2019940022714U priority Critical patent/KR200177248Y1/en
Publication of KR960012214U publication Critical patent/KR960012214U/en
Application granted granted Critical
Publication of KR200177248Y1 publication Critical patent/KR200177248Y1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
KR2019940022714U 1994-09-03 1994-09-03 Address transition detecting circuit of semiconductor memory KR200177248Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019940022714U KR200177248Y1 (en) 1994-09-03 1994-09-03 Address transition detecting circuit of semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019940022714U KR200177248Y1 (en) 1994-09-03 1994-09-03 Address transition detecting circuit of semiconductor memory

Publications (2)

Publication Number Publication Date
KR960012214U true KR960012214U (en) 1996-04-17
KR200177248Y1 KR200177248Y1 (en) 2000-04-15

Family

ID=19392390

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019940022714U KR200177248Y1 (en) 1994-09-03 1994-09-03 Address transition detecting circuit of semiconductor memory

Country Status (1)

Country Link
KR (1) KR200177248Y1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190028605A (en) * 2017-09-08 2019-03-19 삼성전자주식회사 Storage device and data training method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190028605A (en) * 2017-09-08 2019-03-19 삼성전자주식회사 Storage device and data training method thereof

Also Published As

Publication number Publication date
KR200177248Y1 (en) 2000-04-15

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