KR960011466B1 - Oxide thin film forming method for capacitor using ozone - Google Patents
Oxide thin film forming method for capacitor using ozone Download PDFInfo
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- KR960011466B1 KR960011466B1 KR1019930010709A KR930010709A KR960011466B1 KR 960011466 B1 KR960011466 B1 KR 960011466B1 KR 1019930010709 A KR1019930010709 A KR 1019930010709A KR 930010709 A KR930010709 A KR 930010709A KR 960011466 B1 KR960011466 B1 KR 960011466B1
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- South Korea
- Prior art keywords
- ozone
- thin film
- oxide thin
- capacitor
- pure water
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 239000010409 thin film Substances 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 21
- 239000003990 capacitor Substances 0.000 title claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 25
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000007598 dipping method Methods 0.000 claims abstract description 4
- 239000000243 solution Substances 0.000 claims description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 abstract description 4
- 229910021641 deionized water Inorganic materials 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract 2
- 235000011149 sulphuric acid Nutrition 0.000 abstract 2
- 239000001117 sulphuric acid Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- -1 oxygen ions Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
본 발명은 반도체 기억소자 제조공정중 산화박막 형성방법에 관한 것으로, 특히 오존(O3)을 이용한 캐패시터용 산화박막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming an oxide thin film during a semiconductor memory device manufacturing process, and more particularly to a method of forming an oxide thin film for a capacitor using ozone (O 3 ).
디램(DRAM;Dynamic Random Access Momory)과 같은 기억소자 제조시 캐패시터 유전체막으로 산화막-질화막-산화막(ONO;oxide-nitride-oxide : 이하 ONO막이라 칭함)의 복합구조 유전체막이 주로 이용되고 있다.In the manufacture of memory devices such as DRAM (DRAM), a composite structure dielectric film of oxide-nitride-oxide (ONO) is mainly used as a capacitor dielectric film.
종래의 캐패시터용 ONO막 형성시 산화박막 성장방법중 하나는 확산로(furnace) 내에서 대기중의 산소를 이용하여 산화박막을 성장시킨 다음 질화박막 성장공정은 별도로 진행하는 방법이다.One of the methods of growing an oxide thin film in the formation of a conventional ONO film for a capacitor is a method of growing an oxide thin film using oxygen in the atmosphere in a diffusion furnace and then performing a nitride thin film growth process separately.
종래의 보다 개선된 방법은 질화박막 성장시 산화박막을 전단계에서 함께 성장시키는 방법이 이용되고 있다.The conventional more improved method is a method of growing the oxide thin film together in the previous step when growing the nitride film.
이를 상세히 살펴보면, 먼저 황산(H2SO4)과 과산화수소(H2O2)가 4 대 1로 혼합된 용액에 딥하고, 70℃의 순수(DI;Deionized water)로 린스한 다음, 불화수소(HF)와 순수가 1대 50으로 혼합된 용액에 60초간 딥하고 다시 순수로 린스한 다음, 염소(HC1)와 과산화수소(H2O2)와 순수가 1대 1대 5로 혼합된 용액에 딥하고, 다시 순수로 린스하는 단계로 구성된 전체 크리닝 공정을 완료한다. 이어서, 15내지 20A 두께의 산화박막, 85 내지 90A 두께의 질화박막, 500내지 550A 두께의 산화박막을 중착하는 방법이다.In detail, first, sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 O 2 ) is dip into a solution mixed 4 to 1, rinsed with DI (Deionized water) at 70 ℃, and then hydrogen fluoride ( HF) and pure water in a 1:50 mixture for 60 seconds and rinsed again with pure water, and then chlorine (HC1), hydrogen peroxide (H 2 O 2 ) and pure water in a 1: 1 to 5 mixed solution Then, the entire cleaning process consisting of rinsing with pure water is completed. Subsequently, a method of depositing 15 to 20A thick oxide thin film, 85 to 90A thick nitride thin film, and 500 to 550A thick oxide thin film is carried out.
그러나, 상기 종래방법들은 아래와 같이 여러 가지 문제점을 내포하고 있다.However, the above conventional methods have various problems as follows.
첫째, 확산로에서 산화박막 성장시 확산로 내에서의 기판 위치에 따라 막 중착 두께가 달라져 균일성(uniformity)이 좋지 않게 된다.First, when the oxide thin film is grown in the diffusion furnace, the film deposition thickness varies according to the position of the substrate in the diffusion furnace, resulting in poor uniformity.
둘째, 확산로 내에서 대기중의 산소를 이용함으로써 증착되는 막의 두께를 조절할 수 있는 파라메타가 없어, 초고집적 반도체 소자에서 실지로 요구되는 막두께인 20A 미만의 박막 성장시 신뢰성이 결여된다.Second, there is no parameter that can control the thickness of the film deposited by using oxygen in the atmosphere in the diffusion furnace, and there is a lack of reliability in the growth of a thin film of less than 20A, which is the film thickness actually required in an ultra-high density semiconductor device.
세째로는 질화박막과 함께 성장시 주기적으로 산화박막에 대한 모니터(monitor)가 불가능하며, 모니터 주기 사이에 진행된 공정에 대해서는 신뢰성이 불확실하다.Third, it is impossible to monitor the oxide thin film periodically during growth with the nitride film, and the reliability of the process performed between the monitoring cycles is uncertain.
상기와 같은 여러 문제점을 해결하기 위하여 안출된 본 발명은 20A 미만의 산화박막을 크리닝과 동시에 성장시킬 수 있는 오존을 이용한 캐패시터용 산화박막 형성방법을 제공하는데 그 목적이 있다.The present invention devised to solve the various problems as described above is an object of the present invention to provide a method for forming an oxide thin film for a capacitor using ozone that can be grown at the same time the oxide thin film of less than 20A.
상기 목적을 달성하기 위하여 본 발명인 오존을 이용한 캐패시터용 산화박막 형성방법은 반도체 기판을 황산(H2SO4)과 오존이 혼합된 용액에 딥하고, 순수로 린스하는 단계, 불화수소와 순수가 1대 50으로 혼합된 용액에 딥하고 다시 순수로 린스하는 단계, 오존이 포함된 순수에 린스하는 단계를 포함하여 이루어지는 것을 특징으로 한다.In order to achieve the above object, the method of forming an oxide thin film for a capacitor using ozone according to the present invention includes dipping a semiconductor substrate into a solution containing sulfuric acid (H 2 SO 4 ) and ozone, and rinsing with pure water, hydrogen fluoride and pure water 1 And rinsing with pure water, rinsing with pure water, and rinsing with pure water containing ozone.
이하, 본 발명을 상술한다.Hereinafter, the present invention will be described in detail.
본 발명은 대기중의 산소에 의존하는 것이 아니라 강산화성 물질이 오존(O3)을, 물을 매개체로 하여 실리콘 기판과 반응시 산소(O2)와 산소이온(O-)으로 분해시켜 산소(O2)를 SiO2박막 성장에 이용하는 방법이다.The present invention does not rely on oxygen in the atmosphere, but strongly oxidizing substances decompose ozone (O 3 ) into oxygen (O 2 ) and oxygen ions (O − ) when reacting with a silicon substrate through water as a medium. O 2 ) is used to grow a SiO 2 thin film.
이를 공정단계를 통하여 보면, 우선 황산(H2SO4)과 오존이 3대 1로 혼합된 용액에 딥하고, 70℃의 순수로 린스한 다음, 불화수소와 순수가 1대 50으로 혼합된 용액에 60초간 딥하고 다시 순수로 린스한 다음, 최종 린스시 오존이 포함된 물에 린스시키면 오존이 실리콘 기판과 반응하여, 산소(O2)와 산소이온(O-)으로 분해됨으로써 린스와 동시에 SiO 박막이 성장된다. 이때, 오존이 용해도를 O(zero)으로 만들어주는 것이 중요한데, 오존의 용해도는 아래 표 1에 도시된 바와 같이 60℃에서 0이 되고 수온에 반비례하므로 수온을 최소한 60℃이상이 되게 해야 한다. 이를 위해 최종 린스시 가열장치가 필요하다.Through this process step, first, sulfuric acid (H 2 SO 4 ) and ozone is a three-to-one mixed solution, rinsed with 70 ℃ pure water, then hydrogen fluoride and pure water 1: 50 solution a rinse with 60 seconds dip and pure water, and then, when the rinsing for containing the final rinse during the ozone water to the ozone reaction with the silicon substrate, the oxygen (O 2) and oxygen ions (O -) by being decomposed at the same time as rinsing SiO The thin film is grown. At this time, it is important that ozone makes O (zero) solubility, so that the solubility of ozone becomes 0 at 60 ° C and is inversely proportional to the water temperature, as shown in Table 1 below. For this purpose, a heating device is required at the final rinse.
이어서, 이후 공정인 질화박막, 산화박막 성장공정을 진행한다.Subsequently, a process of growing a thin nitride film and an oxide thin film is performed.
상기와 같이 이루어지는 본 발명은 크리닝과 동시에 산화박막을 형성할 수 있어 공정이 간단하고, 또한 형성되는 산화박막의 두께 모니터가 가능하여 공정 신뢰도가 향상된다.According to the present invention as described above, an oxide thin film can be formed at the same time as cleaning, so that the process is simple, and the thickness of the oxide thin film formed can be monitored, thereby improving process reliability.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930010709A KR960011466B1 (en) | 1993-06-12 | 1993-06-12 | Oxide thin film forming method for capacitor using ozone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930010709A KR960011466B1 (en) | 1993-06-12 | 1993-06-12 | Oxide thin film forming method for capacitor using ozone |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950001870A KR950001870A (en) | 1995-01-04 |
| KR960011466B1 true KR960011466B1 (en) | 1996-08-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930010709A KR960011466B1 (en) | 1993-06-12 | 1993-06-12 | Oxide thin film forming method for capacitor using ozone |
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| Country | Link |
|---|---|
| KR (1) | KR960011466B1 (en) |
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1993
- 1993-06-12 KR KR1019930010709A patent/KR960011466B1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR950001870A (en) | 1995-01-04 |
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