KR960010911A - Nitrogen radical generator for nitrogen compound semiconductor manufacturing - Google Patents

Nitrogen radical generator for nitrogen compound semiconductor manufacturing Download PDF

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Publication number
KR960010911A
KR960010911A KR1019940023881A KR19940023881A KR960010911A KR 960010911 A KR960010911 A KR 960010911A KR 1019940023881 A KR1019940023881 A KR 1019940023881A KR 19940023881 A KR19940023881 A KR 19940023881A KR 960010911 A KR960010911 A KR 960010911A
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South Korea
Prior art keywords
chamber
nitrogen
plasma
needle valve
wall
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KR1019940023881A
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Korean (ko)
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KR0119281B1 (en
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이재진
이해권
김경수
박형무
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양승택
재단법인 한국전자통신연구소
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Priority to KR1019940023881A priority Critical patent/KR0119281B1/en
Publication of KR960010911A publication Critical patent/KR960010911A/en
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Publication of KR0119281B1 publication Critical patent/KR0119281B1/en

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Abstract

본 발명은 초고진공 중에서 질소 래디칼을 생성하는 소오스로서 특히 반응에 활성화된 질소 래디칼을 형성하고 프라즈마 챔버의 자체 형태에 의해 프라즈마를 추출하면서 초음파를 이용해 균일도를 높여 질화물 화합물 반도체 제작시 결정성과 전기적인 특성을 향상시킬 수 있는 질소 래디칼 생성장치에 관한 것이다.The present invention is a source for generating nitrogen radicals in ultra-high vacuum, in particular the formation of activated nitrogen radicals in the reaction and extracting the plasma by its own shape of the plasma chamber to increase the uniformity using ultrasonic waves, crystallinity and electrical properties when manufacturing a nitride compound semiconductor It relates to a nitrogen radical generating device that can improve the.

본 발명은 분자선 에피택시 장비를 이용한 질소 래디칼 발생장치에 있어서, 하전된 질소 래디칼과 화학결합하여 질화물 반도체를 형성할 수 있는 기판; 프라즈마가 밀도차에 의해 상기 기판을 향하여 입사될 수 있도록 원추형상의 구조를 갖는 챔버; 상기 챔버의 외측벽에 형성되어 프라즈마를 형성하기 위한 마그네트; 상기 챔버내로 불활성 가스인 질소를 주입하기 위한 니들밸브; 상기 니들밸브로부터 유입된 질소가스를 침버내로 확산시키기 위한 확산자; 확산된 질소가스를 이온화시키기 위한 필라멘트; 및 형성된 프라즈마와 균일한 분포를 이룰 수 있도록 상기 챔버의 하측외벽에 부착된 초음파 진동자로 구성된다.The present invention provides a nitrogen radical generator using molecular beam epitaxy equipment, comprising: a substrate capable of chemically bonding with charged nitrogen radicals to form a nitride semiconductor; A chamber having a conical structure such that plasma can be incident toward the substrate by a density difference; A magnet formed on an outer wall of the chamber to form a plasma; A needle valve for injecting nitrogen which is an inert gas into the chamber; A diffuser for diffusing nitrogen gas introduced from the needle valve into the chamber; Filaments for ionizing the diffused nitrogen gas; And an ultrasonic vibrator attached to the lower outer wall of the chamber to achieve a uniform distribution with the formed plasma.

Description

질소 화합물 반도체 제조를 위한 질소 래디칼 생성장치Nitrogen radical generator for nitrogen compound semiconductor manufacturing

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 종래의 카우프만형 이온발생장치의 구조를 도시한 도면.1 is a view showing the structure of a conventional Kaufman type ion generating device.

제2도는 본 발명에 의한 질소 래디칼 생성장치의 구조를 도시한 개략도.2 is a schematic view showing the structure of the nitrogen radical generating device according to the present invention.

Claims (1)

분자선 에피택시 장비를 이용한 질소 래디칼 발생장치에 있어서, 하전된 질소 래디칼과 화학결합하여 질화물 반도체를 형성할 수 있는 기판; 프라즈마가 밀도차에 의해 상기 기판을 향하여 입사될 수 있도록 원추형상의 구조를 갖는 챔버; 상기 챔버의 외측벽에 형성되어 프라즈마를 형성하기 위한 마그네트; 상기 챔버내로 불활성 가스인 질소를 주입하기 위한 니들밸브; 상기 니들밸브로부터 유입된 질소가스를 챔버내로 확산시키기 위한 확산자; 확산된 질소가스를 이온화시키기 위한 필라멘트; 및 형성된 프라즈마가 균일한 분포를 이룰 수 있도록 상기 챔버의 하측외벽에 부착된 초음파 진동자로 구성된 것을 특징으로하는 질소 래디칼 생성장치.An apparatus for generating nitrogen radicals using molecular beam epitaxy equipment, comprising: a substrate capable of chemically bonding with charged nitrogen radicals to form a nitride semiconductor; A chamber having a conical structure such that plasma can be incident toward the substrate by a density difference; A magnet formed on an outer wall of the chamber to form a plasma; A needle valve for injecting nitrogen which is an inert gas into the chamber; A diffuser for diffusing nitrogen gas introduced from the needle valve into the chamber; Filaments for ionizing the diffused nitrogen gas; And an ultrasonic vibrator attached to the lower outer wall of the chamber so that the formed plasma can achieve a uniform distribution. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940023881A 1994-09-22 1994-09-22 Nitrogen radical generator for nitrogen compound semiconductor manufacturing KR0119281B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940023881A KR0119281B1 (en) 1994-09-22 1994-09-22 Nitrogen radical generator for nitrogen compound semiconductor manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940023881A KR0119281B1 (en) 1994-09-22 1994-09-22 Nitrogen radical generator for nitrogen compound semiconductor manufacturing

Publications (2)

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KR960010911A true KR960010911A (en) 1996-04-20
KR0119281B1 KR0119281B1 (en) 1998-07-01

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020028052A (en) * 2002-03-25 2002-04-15 (주)씨에스이 Pc cooling system and the control method
KR20030085792A (en) * 2002-05-02 2003-11-07 아이캔이십일 주식회사 Device and method for driving cooling fan using temperature detect

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020028052A (en) * 2002-03-25 2002-04-15 (주)씨에스이 Pc cooling system and the control method
KR20030085792A (en) * 2002-05-02 2003-11-07 아이캔이십일 주식회사 Device and method for driving cooling fan using temperature detect

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KR0119281B1 (en) 1998-07-01

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