KR960010109B1 - Chemical synthesis manufacturing method of a tantal condensor - Google Patents
Chemical synthesis manufacturing method of a tantal condensor Download PDFInfo
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- KR960010109B1 KR960010109B1 KR1019930005372A KR930005372A KR960010109B1 KR 960010109 B1 KR960010109 B1 KR 960010109B1 KR 1019930005372 A KR1019930005372 A KR 1019930005372A KR 930005372 A KR930005372 A KR 930005372A KR 960010109 B1 KR960010109 B1 KR 960010109B1
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- voltage
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- current value
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
Abstract
Description
제1도는 종래의 화성 공정에 따른 그래프.1 is a graph according to a conventional chemical conversion process.
제2도는 본 발명의 화성 공정에 따른 이상적인 그래프.2 is an ideal graph according to the chemical conversion process of the present invention.
제3도는 본 발명의 제조 방법에 따른 그래프.3 is a graph according to the manufacturing method of the present invention.
제4도는 본 발명의 실시예를 도시한 그래프.4 is a graph showing an embodiment of the present invention.
본 발명은 탄탈 콘덴서의 제조 방법에 관한 것으로, 특히 탄탈 콘덴서의 유전체 형성을 위해 전압에 따라 전류값을 변동시킴으로써 균일한 유전체를 형성시키는 방법에 관한 것이다.The present invention relates to a method of manufacturing a tantalum capacitor, and more particularly, to a method of forming a uniform dielectric by varying a current value according to a voltage to form a tantalum capacitor.
일반적으로 탄탈 콘덴서는 양극산화에 의하여 산화탄탈(Ta2O5) 피막을 유전체로 하고 있으며, 탄탈의 박과 소결체를 전극으로 양극산화에 의하여 탄탈 금속면에 형성된 산화피막은 화성전압 1V당 16Å으로 형성된 얇은 피막으로서 피막의 두께는 화성전압의 상승에 비례하여 증가하며 탄탈 콘덴서의 정전용량과는 반비례 관계를 이루고 있으며, 상기 유전체 형성은 금속 탄탈을 전기분해하여 산화 탄탈피막을 형성시킨다.In general, tantalum capacitors have a tantalum oxide (Ta 2 O 5 ) film as the dielectric by anodization, and the oxide film formed on the tantalum metal surface by anodizing with foil and sintered body of tantalum is 16 kW per 1V of chemical conversion voltage. As a thin film formed, the thickness of the film increases in proportion to the increase in the chemical voltage and is in inverse relationship with the capacitance of the tantalum capacitor. The dielectric formation forms a tantalum oxide film by electrolyzing metal tantalum.
이러한 전기 화학적 유전체 형성 공정을 화성공정이라 한다.This electrochemical dielectric forming process is called a chemical conversion process.
즉 유전체 형성을 상술하면 탄탈소자를 (+)극으로 하고, 전해액을 (-)극으로 하여, 전기를 인가하면 전해액 중 물(H2O)이 전해분해되어 수소(H2)는 (-)극에서 발생하고, 산소이온(O-2)은 탄탈 금속과 반응하여 산화탄탈(Ta2O) 피막이 형성하는 바, 콘덴서의 용량은 두 대전판 표면적(S)에 의해 탄탈소자의 크기가 결정되며, 극간거리(d)는 화성 전압에 비례한다.That is, when the dielectric formation is described in detail, the tantalum element is used as the positive electrode, the electrolyte is the negative electrode, and when electricity is applied, water (H 2 O) in the electrolyte is electrolyzed and hydrogen (H 2 ) is negative (-). Oxygen ions (O- 2 ) are generated at the poles and react with the tantalum metal to form a tantalum oxide (Ta 2 O) film. The capacity of the capacitor is determined by the size of the two charging plate surfaces (S). , Inter-gap distance d is proportional to Mars voltage.
또한 화성시 전압을 조정함으로써 극간거리(d)를 조정하며,K : 상수·ε:유전상수로 표시되고 두 대전판 표면적(S)에 의해 소자의 크기에 따라 결정되므로 변수는 극간거리(d)만 남게된다.In addition, by adjusting the voltage at Mars, the distance between the poles (d) is adjusted, Since K is a constant? Dielectric constant and is determined according to the size of the device by the surface area (S) of the two charging plates, only the distance between the poles (d) remains.
종래의 경우 화성 방식은 1도의 그래프를 보는 바와 같이, 일정한 전류로 일정 전압까지 상승시키는 방식으로써, 최초 시간부터 A 시간까지 전류를 고정시키고 원하는 B전압까지 전압을 정속 상승시켜 산화 탄탈(Ta2O5)피막을 형성시키는 방법이다.In the conventional case, as shown in the graph of 1 degree, a method of increasing the voltage to a constant voltage with a constant current, the current is fixed from the first time to the A time, and the voltage is increased at a constant speed to the desired voltage B by tantalum oxide (Ta 2 O). 5 ) A method of forming a film.
그러나 이와같은 공정으로 형성된 피막은 두께가 두꺼워 질수록 산소와 탄탈 금속간의 접촉 면적이 작아지고, 산호의 농도가 낮아지므로 일정한 속도로 피막의 두께를 성장시키기에는 무리가 발생되어 제품의 불량률이 증가하는 문제점이 있었다.However, as the thickness of the film formed by such a process increases, the contact area between oxygen and tantalum metal becomes smaller and the concentration of coral becomes lower. Therefore, it is difficult to grow the film thickness at a constant rate, resulting in an increase in defect rate of the product. There was a problem.
이에 본 발명에선 종래의 문제된 공정방법을 해결하기 위하여 안출한 것으로, 종래의 제조방법인 전류를 고정시키고 원하는 전압까지 전압을 정속 상승시키던 방법을 본 발명에선 전압을 고정시키고 최초 전류를 조정하므로써 안정된 산화탄탈(Ta2O5) 피막층 유전체를 형성시킬 수 있는 탄탈콘덴서의 계단식 화성전압 상승 화성제조방법을 제공하는데 그 목적이 있다.Therefore, in the present invention, it was devised to solve the conventional problem process method, and the method of fixing the current which is the conventional manufacturing method and raising the voltage at a constant speed up to the desired voltage in the present invention is stable by fixing the voltage and adjusting the initial current. It is an object of the present invention to provide a method for manufacturing a step-up voltage conversion method for tantalum capacitors capable of forming a tantalum oxide (Ta 2 O 5 ) coating layer dielectric.
이하 도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
제2도는 본 발명의 화성 공정에 따른 가장 이상적인 곡선을 나타낸 것이다.2 shows the most ideal curve according to the chemical conversion process of the present invention.
즉 화성시 전압 상승 곡선을 조정하여 균일한 산화 탄탈피막(유전체층)을 형성시킬 수 있는 그래프이다.That is, it is a graph which can form a uniform tantalum oxide film (dielectric layer) by adjusting the voltage rise curve at the time of chemical conversion.
제3도는 본 발명의 제조 방법에 관한 것으로, 탄탈 콘덴서의 산화 탄탈피막(유전체층)을 얻고자 전기분해 시키는 제조방법에 있어서, 전압범위 0~100V 상승에 비례하여 0.1~0.3mA/100cV 전류치를 감소시키는 단계, 전압범위 100~150V 상승에 비례하여 0.05~0.15mA/100cV 전류치를 감소시키는 단계, 전압범위 150~200V 상승에 비례하여 0.025~0.075mA/100cV 전류치를 감소시키는 단계로 이루어진 제조방법이다.3 is related to the manufacturing method of the present invention, in the manufacturing method of electrolytic decomposition in order to obtain a tantalum oxide film (dielectric layer) of the tantalum capacitor, 0.1 to 0.3mA / 100cV current value in proportion to the voltage range 0 ~ 100V rise The step of reducing, 0.05 ~ 0.15mA / 100cV current value in proportion to the voltage range 100 ~ 150V rise, the manufacturing method consisting of reducing the 0.025 ~ 0.075mA / 100cV current value in proportion to the voltage range 150 ~ 200V rise.
제4도는 본 발명은 임의로 시간에 따라 전류치를 낮추므로 균일한 유전체층을 형성할 수 있는 예를 설명한 것으로, 최초 인가하는 전류값은 전압의 상승 기울기를 결정하게 되는데 이것은 금속 탄탈이 산화됨에 따라 저항치(R)가 커지고 오옴의 법칙(V=1·R) 따라 전압이 상승하기 때문이다.FIG. 4 illustrates an example in which the present invention arbitrarily lowers the current value over time, thereby forming a uniform dielectric layer. The current value applied for the first time determines the rising slope of the voltage. This is because R) increases and the voltage rises according to Ohm's law (V = 1 · R).
실질적으로 탄탈의 산화되는 량은 전하량에 비례하므로 전류값 1의 결정은 전압의 상승 속도를 결정하는 바, 전압값에 따라 최초 전류치를 조정시키므로써 안정된 산화 탄탈피막(Ta2O5)을 형성시킨다.Since the amount of tantalum is substantially proportional to the amount of charge, the determination of the current value 1 determines the rate of rise of the voltage, thereby forming a stable tantalum oxide film (Ta 2 O 5 ) by adjusting the initial current value according to the voltage value. .
목표 전압(화성전압)이 160V인 경우 최초 0.3mA/100cV을 적용한다.If the target voltage (Mars voltage) is 160V, the first 0.3mA / 100cV is applied.
즉 100V까지는 0.3mA/100cV로 전압을 상승시키고, 100~150V까지는 0.15mA/100cA로 전압을 상승시키며, 160V 도달 후 정전압 상태(Constant Voltage) 유지를 하게 된다.That is, it increases the voltage to 0.3mA / 100cV up to 100V, increases the voltage to 0.15mA / 100cA up to 100 ~ 150V, and maintains constant voltage after reaching 160V.
이와 같이 본 발명에선 전압값에 따라 최초 전류치를 조정하므로써 안정된 산화 탄탈(Ta2O5) 피막층을 형성시키므로써 우수한 정전용량을 구비한 제품을 만들수 있는 효과가 있다.As described above, according to the present invention, a stable tantalum oxide (Ta 2 O 5 ) film layer is formed by adjusting the initial current value according to the voltage value, thereby making it possible to produce a product having excellent capacitance.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930005372A KR960010109B1 (en) | 1993-03-31 | 1993-03-31 | Chemical synthesis manufacturing method of a tantal condensor |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019930005372A KR960010109B1 (en) | 1993-03-31 | 1993-03-31 | Chemical synthesis manufacturing method of a tantal condensor |
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| Publication Number | Publication Date |
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| KR940022605A KR940022605A (en) | 1994-10-21 |
| KR960010109B1 true KR960010109B1 (en) | 1996-07-25 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2017159986A1 (en) * | 2016-03-15 | 2017-09-21 | (주)브이텍 | Vacuum gripper unit comprising vacuum pump |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2017159986A1 (en) * | 2016-03-15 | 2017-09-21 | (주)브이텍 | Vacuum gripper unit comprising vacuum pump |
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