KR960009101A - Quartz glass jig for silicon wafer heat treatment and its use method - Google Patents

Quartz glass jig for silicon wafer heat treatment and its use method Download PDF

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Publication number
KR960009101A
KR960009101A KR1019950027730A KR19950027730A KR960009101A KR 960009101 A KR960009101 A KR 960009101A KR 1019950027730 A KR1019950027730 A KR 1019950027730A KR 19950027730 A KR19950027730 A KR 19950027730A KR 960009101 A KR960009101 A KR 960009101A
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KR
South Korea
Prior art keywords
quartz glass
silicon wafer
concentration
glass jig
heat treatment
Prior art date
Application number
KR1019950027730A
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Korean (ko)
Other versions
KR0171660B1 (en
Inventor
겜모찌 가쯔히꼬
Original Assignee
히로시 마쯔자끼
신에쯔 세끼에이 가부시끼가이샤
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Application filed by 히로시 마쯔자끼, 신에쯔 세끼에이 가부시끼가이샤 filed Critical 히로시 마쯔자끼
Publication of KR960009101A publication Critical patent/KR960009101A/en
Application granted granted Critical
Publication of KR0171660B1 publication Critical patent/KR0171660B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H01L21/67316—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Glass Compositions (AREA)
  • Packaging Frangible Articles (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

웨이퍼 재치부재와 그 웨이퍼 재치부재를 지지하는 지지부재를 포함하고, 이들 재치부재와 지지부재가 일체로 접합되어 있으며, 상기 지지부재는 Al 농도가 5ppm-20ppm, Li가 0.1ppm-1ppm 그리고 Na 농도가 0.1ppm 이하로 함유된 석영글라스로 이루어진, 실리콘 웨이퍼 열처리용 석영글라스 지그가 제공된다.A wafer mounting member and a supporting member for supporting the wafer mounting member, wherein the mounting member and the supporting member are integrally bonded, the supporting member having an Al concentration of 5ppm-20ppm, Li 0.1ppm-1ppm and Na concentration There is provided a quartz glass jig for heat treatment of a silicon wafer, which is made of quartz glass containing 0.1 ppm or less.

상기 지그를 이용하여 실리콘 웨이퍼를 열처리하는 경우 실리콘 웨이퍼가 오염이 되지 않을 뿐만 아니라 처리된 실리콘 웨이퍼 상에 양호한 품질의 균일한 산화막을 얻을 수 있다.When the silicon wafer is heat-treated using the jig, not only the silicon wafer is contaminated but also a uniform oxide film of good quality can be obtained on the processed silicon wafer.

이같은 본 발명의 지그는 가열로내에 Na 오염원이 존재하더라도 지지부재의 기능에 힘입어 정해진 시간동안 오염을 방지할 수 있으며, 이를 사용하는 경우 실리콘 웨이퍼의 열처리를 계속할 수 있다는 잇점이 있는 것이다.Such a jig of the present invention can prevent contamination for a predetermined time due to the function of the support member even if Na pollutant is present in the furnace, and in this case, the heat treatment of the silicon wafer can be continued.

나아가, 본 발명에 의하면 지지부재에 부착된 분석용 돌기부를 간단히 분석함으로써 지그의 최대 사용수명을 효과적으로 판단할 수 있다.Furthermore, according to the present invention, it is possible to effectively determine the maximum service life of the jig by simply analyzing the analysis protrusion attached to the support member.

Description

실리콘 웨이퍼 열처리용 석영글라스 지그 및 그 사용방법Quartz glass jig for silicon wafer heat treatment and its use method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 일실시예에 의한 수평로(爐) 지그(jig)의 사용상태를 나타내는 사시도.1 is a perspective view showing a state of use of the horizontal jig (jig) in accordance with an embodiment of the present invention.

Claims (6)

웨이퍼 재치부재와 그 웨이퍼 재치부재를 지지하는 지지부재를 포함하고, 이들이 일체로 접합되어 있는 실리콘 웨이퍼 열처리용 석영글라스 지그에 있어서, 상기 지지부재는 Al 농도가 5ppm-20ppm 범위, Li 농도가 0.1ppm-1ppm 범위이고, Na 농도가 0.1ppm 이하로 함유된 석영글라스로 이루어짐을 특징으로 하는 석영글라스 지그.A quartz glass jig for heat treatment of a silicon wafer comprising a wafer placing member and a supporting member for supporting the wafer placing member, wherein the supporting member has an Al concentration of 5 ppm-20 ppm and a Li concentration of 0.1 ppm. Quartz glass jig characterized by consisting of a quartz glass in the range of -1ppm, Na concentration of 0.1ppm or less. 제1항에 있어서, 상기 지지부재를 이루는 석영글라스내의 OH 래디컬 농도가 120ppm-230ppm 임을 특징으로 하는 석영글라스 지그.The quartz glass jig according to claim 1, wherein the OH radical concentration in the quartz glass constituting the support member is 120 ppm-230 ppm. 제1항에 있어서, 상기 웨이퍼 재치부재는 Al 농도가 3ppm 이하이며 Li 농도가 0.05ppm 이하로 함유된 석영글라스로 이루어짐을 특징으로 하는 석영글라스 지그.The quartz glass jig according to claim 1, wherein the wafer placing member is made of quartz glass having an Al concentration of 3 ppm or less and a Li concentration of 0.05 ppm or less. 제1항에 있어서, 상기 지지부재의 중량은 석영글라스 지그 전체 중량의 30% 이상임을 특징으로 하는 석영글라스 지그.The quartz glass jig according to claim 1, wherein the weight of the support member is 30% or more of the total weight of the quartz glass jig. 제1항에 있어서, 상기 지지부재에는 그 지지부재와 돌출부 사이에 각각 절반 정도의 깊이로 좁은 틈새가 형성된 최소 2개의 돌출부가 부착되어 있음을 특징으로 하는 석영글라스 지그.The quartz glass jig according to claim 1, wherein the support member is attached with at least two protrusions each having a narrow gap between the support member and the protrusion at half depth. 실리콘 웨이퍼를 열처리하기 위한 석영글라스 지그의 지지부재에 부착된 분석용 돌출부로부터 절단된 부분내의 Na 농도를 측정함으로써 석영글라스 지그의 최대 사용수명을 측정하는, 실리콘 웨이퍼 열처리용 석영글라스 지그의 사용 방법.A method of using a quartz glass jig for heat treatment of a silicon wafer, wherein the maximum service life of the quartz glass jig is measured by measuring Na concentration in a portion cut from the analytical protrusion attached to the support member of the quartz glass jig for heat treatment of the silicon wafer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950027730A 1994-08-31 1995-08-30 Quartz glass jig for heat treatment of silicon wafer and method and device for producing the same KR0171660B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP22896694A JP2911023B2 (en) 1994-08-31 1994-08-31 Quartz glass jig for heat treatment of silicon wafer and method of using the same
JP94-228966 1994-08-31

Publications (2)

Publication Number Publication Date
KR960009101A true KR960009101A (en) 1996-03-22
KR0171660B1 KR0171660B1 (en) 1999-03-30

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KR1019950027730A KR0171660B1 (en) 1994-08-31 1995-08-30 Quartz glass jig for heat treatment of silicon wafer and method and device for producing the same

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JP (1) JP2911023B2 (en)
KR (1) KR0171660B1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4464485B2 (en) * 1999-06-18 2010-05-19 株式会社アドバンス Processing method of dental prosthesis
JP3781014B2 (en) * 2003-03-31 2006-05-31 株式会社Ｓｕｍｃｏ Silicon wafer heat treatment jig and silicon wafer heat treatment method
CN102560683B (en) * 2010-12-29 2015-09-30 有研半导体材料有限公司 A kind of prevent silicon chip from heat treatment process, collapsing limit method and quartz boat

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JP2911023B2 (en) 1999-06-23
KR0171660B1 (en) 1999-03-30
JPH0873296A (en) 1996-03-19

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