KR960002633A - Half-tone phase inversion mask and manufacturing method thereof - Google Patents

Half-tone phase inversion mask and manufacturing method thereof Download PDF

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Publication number
KR960002633A
KR960002633A KR1019940013484A KR19940013484A KR960002633A KR 960002633 A KR960002633 A KR 960002633A KR 1019940013484 A KR1019940013484 A KR 1019940013484A KR 19940013484 A KR19940013484 A KR 19940013484A KR 960002633 A KR960002633 A KR 960002633A
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KR
South Korea
Prior art keywords
phase shift
gas
mask
tone
manufacturing
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KR1019940013484A
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Korean (ko)
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KR0138720B1 (en
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문승찬
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김주용
현대전자산업 주식회사
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Priority to KR1019940013484A priority Critical patent/KR0138720B1/en
Publication of KR960002633A publication Critical patent/KR960002633A/en
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Publication of KR0138720B1 publication Critical patent/KR0138720B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Abstract

본 발명은 반도체 제조공정의 광 리소그라피 공정기술을 사용되는 하프-톤 위상반전마스크 및 그 제조방법에 관한 것으로, 특히 광학특성이 향상된 위상반전물질을 예를 들어 CrO, CrON, MoSiO 또는 MoSiON으로 형성하여 노광시 차광지역에서 약 10%의 광투과현상이 발생하여 노광지역의 광(약100%)과 간섭 현상을 일으키므로서 광 콘트라스트를 향상시키고, 차광지역의 위상반전 물질을 단층으로 하여 적절한 광 투과율을 얻음으로써 마스크의 제작이 간편하고 마스크 결합 발생을 최소화 할 수 있는 기술이다.The present invention relates to a half-tone phase shift mask and a method for fabricating the same using a photolithography process technology of a semiconductor manufacturing process. In particular, a phase shift material having improved optical properties is formed of, for example, CrO, CrON, MoSiO, or MoSiON. When exposed, light transmittance of about 10% is generated in the shading area, causing interference with light (about 100%) in the exposure area, thereby improving light contrast, and having a single layer of phase shift material in the shading area. It is a technology that makes it easy to manufacture a mask and minimizes the occurrence of mask coupling.

Description

하트-톤 위상반전 마스크 및 그 제조방법Heart-tone phase reversal mask and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 종래기술로 제조된 하프-톤(half-tone) 위상반전마스크와 광세기를 도시한 도면,1 is a diagram illustrating a half-tone phase shift mask and light intensity manufactured according to the prior art;

제2도는 본 발명에 의해 하프-톤 위상반전마스크 제조 단계를 도시한 단면도,2 is a cross-sectional view showing a half-tone phase shift mask manufacturing step according to the present invention,

제3도는 본 발명의 하프-톤 위상반전마스크에 사용되는 위상반전물질층의 종류와 노광파장에 따른 광학특성을 도시한 도면.3 is a diagram showing the type of phase inversion material layer used in the half-tone phase inversion mask of the present invention and the optical characteristics according to the exposure wavelength.

Claims (7)

위상반전마스크에 있어서, 투명기판 상부에 광투과율이 9-10%를 갖는 단층의 위상반전물질 패턴이 구비된 것을 특징으로 하는 하프-톤 위상반전마스크.A half-tone phase shift mask according to claim 1, wherein a single layer phase shift material pattern having a light transmittance of 9-10% is provided on the transparent substrate. 제1항에 있어서, 상기 위상반전물질 패턴은 CrO, CrON, MoSiO 또는 MoSiON막이 100-500nm의 두께로 형성된 것을 특징으로 하는 하프-톤 위상반전마스크.The half-tone phase shift mask of claim 1, wherein the phase shift material pattern is formed of a CrO, CrON, MoSiO, or MoSiON layer having a thickness of 100-500 nm. 위상반전마스크 제조방법에 있어서, 투명기판 상부에 위상반전물질층과 레지스트층을 적층하고하는 단계와, 노광 및 현상공정으로 레지스트 패턴을 형성하는 단계와, 상기 레지스트 패턴을 마스크로 하여 위상반전물질층을 식각하여 위상반전물질 패턴을 형성하는 단계와, 상기 레지스트 패턴을 마스크로 하여 위상반전물질패턴으로 이루어진 하프-톤 위상반전마스크를 형성하는 단계를 포함하는 하프-톤 위상반전마스크 제조방법.A method of manufacturing a phase shift mask, comprising: laminating a phase shift material layer and a resist layer on a transparent substrate, forming a resist pattern by an exposure and development process, and using the resist pattern as a mask Forming a phase shift material pattern by etching and forming a half-tone phase shift mask comprising a phase shift material pattern using the resist pattern as a mask. 제3항에 있어서, 상기 위상반전물질층은 DC 반응성 스퍼터링방법에 의하여 CrO 또는 MoSi을 타켓으로 사용하고, Ar+O2, N2가스를 캐리어 및 스퍼터링 개스로 사용하여 CrO 또는 MoSi막으로 증착하는 것을 특징으로 하는 하프-톤 위상반전마스크 제조방법.4. The method of claim 3 wherein the phase shift material layer using CrO or MoSi by DC reactive sputtering method, the target, and, Ar + O 2, by using the N 2 gas as a carrier and a sputtering gas to deposit a CrO or MoSi film Half-tone phase inversion mask manufacturing method characterized in that. 제4항에 있어서, 상기 위상반전물질층을 스프터링할때 DC 전압은 200~600(V), O2개스 플로우는 1~10(sccm), 1~20(sccm)의 Ar을 캐리어 개스로 공급하는 것을 특징으로 하는 하프-톤 위상반전마스크 제조방법.The sputtering of the phase shift material layer according to claim 4, wherein DC voltage is 200 to 600 (V), and O 2 gas flow is 1 to 10 (sccm) and 1 to 20 (sccm) of Ar to a carrier gas. A half-tone phase shift mask manufacturing method characterized in that the supply. 제3항에 있어서, 상기 위상반전물질층은 DC 반응성 스퍼터링방법에 의하여 CrO막을 타켓으로 사용하고, Ar+O2개스에 1~30(sccm)의 N2개스를 추가로 캐리어 및 스퍼터링 개스로 공급하여 CrON막으로 증착하는 것을 특징으로 하는 하프-톤 위상반전마스크 제조방법.The method of claim 3, wherein the phase inversion material layer using a CrO film as a target by a DC reactive sputtering method, and 1 to 30 (sccm) N 2 gas to the Ar + O 2 gas is further supplied to the carrier and sputtering gas Half-tone phase inversion mask manufacturing method characterized in that the deposition on the CrON film. 제3항에 있어서, 상기 위상반전물질층은 DC 반응성 스퍼터링방법에 의하여 MoSiO 또는 MoSion을 타켓으로 사용하고, Ar+O2, 개스 또는 Ar+O2,N2개스를 캐리어 및 스퍼터링 개스로 공급하여 MoSiO 또는 MoSiON막으로 증착하는 것을 특징으로 하는 하프-톤 위상반전마스크 제조방법.The method of claim 3, wherein the phase shift material layer using MoSiO or MoSion as a target by a DC reactive sputtering method, by supplying Ar + O 2 , gas or Ar + O 2 , N 2 gas to the carrier and sputtering gas A half-tone phase shift mask manufacturing method characterized in that the deposition by MoSiO or MoSiON film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940013484A 1994-06-15 1994-06-15 Half-tone phase shift mask and making method thereof KR0138720B1 (en)

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KR1019940013484A KR0138720B1 (en) 1994-06-15 1994-06-15 Half-tone phase shift mask and making method thereof

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Application Number Priority Date Filing Date Title
KR1019940013484A KR0138720B1 (en) 1994-06-15 1994-06-15 Half-tone phase shift mask and making method thereof

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KR960002633A true KR960002633A (en) 1996-01-26
KR0138720B1 KR0138720B1 (en) 1998-06-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100382609B1 (en) * 2000-08-28 2003-05-01 주식회사 하이닉스반도체 Method for manufacturing a phase shift mask

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100382609B1 (en) * 2000-08-28 2003-05-01 주식회사 하이닉스반도체 Method for manufacturing a phase shift mask

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