KR960002544Y1 - Gas line connecting apparatus of wafer low pressure deposition appratus - Google Patents

Gas line connecting apparatus of wafer low pressure deposition appratus Download PDF

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Publication number
KR960002544Y1
KR960002544Y1 KR2019930003760U KR930003760U KR960002544Y1 KR 960002544 Y1 KR960002544 Y1 KR 960002544Y1 KR 2019930003760 U KR2019930003760 U KR 2019930003760U KR 930003760 U KR930003760 U KR 930003760U KR 960002544 Y1 KR960002544 Y1 KR 960002544Y1
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gas line
gas
low pressure
gasket
reactor
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KR2019930003760U
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Korean (ko)
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KR940023542U (en
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박병후
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엘지반도체 주식회사
문정환
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음.No content.

Description

웨이퍼 저압증착 장비의 가스라인 연결장치Gas line connection device for wafer low pressure deposition equipment

제1도는 일반적인 저압증착 장비를 나타낸 구성도1 is a block diagram showing a general low pressure deposition equipment

제2도는 종래 장치를 나타낸 제1도의 "A"부 분해 사시도Figure 2 is an exploded perspective view of the "A" part of Figure 1 showing a conventional apparatus

제3도는 제2도의 결합상태 종단면도3 is a longitudinal cross-sectional view of FIG.

제4도는 본 고안 장치를 나타낸 분해 사시도4 is an exploded perspective view showing the device of the present invention

제5도는 제4도의 결합상태 종단면도5 is a longitudinal cross-sectional view of FIG.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

10 : 플랜지 16 : 제1가스라인10 flange 16 first gas line

17,19 : 조임나사 18 : 제2가스라인17,19: Tightening screw 18: 2nd gas line

20 : 가스켓 21, 22 : 요철부20: gasket 21, 22: uneven portion

본 고안은 웨이퍼 저압증착 장비의 가스라인 연결장치에 관한 것으로서, 좀 더 구체적으로는 가스라인 연결부에서 공정가스가 누설되지 않도록 한 것이다.The present invention relates to a gas line connection device of a wafer low pressure deposition apparatus, and more specifically, to prevent process gas from leaking from the gas line connection part.

첨부도면 제1도는 일반적인 저압증착 장비를 나타낸 구성도로서, 저압증착 장비는 초기상태에서 공기밸브(2)를 패쇄시키고 진공펌프(도시는 생략함)에 의해 반응로(1) 내부의 가스를 일정시간 펌핑을 실시하여 반응로(1)내부가 정해진 일정압력 이하로 도달하면 게이트밸브(3)도 패쇄시켜 반응로(1)에 장착된 압력케이지(4)를 통해 일정시간 반응로(1) 내의 압력변화를 감지하는 가스누설여부 확인 작업을 하게 된다.FIG. 1 is a schematic view showing a general low pressure deposition equipment. The low pressure deposition equipment closes the air valve 2 at an initial state, and the gas inside the reactor 1 is fixed by a vacuum pump (not shown). When the inside of the reactor 1 reaches below a predetermined constant pressure by performing the time pumping, the gate valve 3 is also closed and the inside of the reactor 1 for a predetermined time through the pressure cage 4 mounted on the reactor 1. It will check the gas leakage to detect the pressure change.

그 후 일정시간동안 가스누설이 발생되지 않아 반응로(1) 내부가 기준치 이하의 압력을 계속해서 유지하면 수동밸브(5)와 공기밸브(6)를 개방시켜 유량흐름조절기(7)(8)에 의해 정해진 양의 반응가스 및 N2가스를 반응로(1) 내부로 공급하게되므로 반응로(1) 내에서 반응을 일으켜 웨이퍼(도시는 생략함)를 증착하게 된다.After that, if no gas leakage occurs for a certain period of time and the inside of the reactor 1 continues to maintain the pressure below the reference value, the manual valve 5 and the air valve 6 are opened to open the flow rate regulators 7 and 8. By supplying the reaction gas and the N 2 gas of the predetermined amount into the reactor 1, the reaction occurs in the reactor 1 to deposit a wafer (not shown).

이와 같이 가스누설여부 확인작업이 완료되고 반응가스와 N2가스를 반응로(1) 내로 공급하면서 공정을 수행할 때에는 폐쇄시켰던 게이트밸브(3)를 다시 개방시켜 반응로(1) 내부를 계속해서 저압상태로 유지하게 된다.When the gas leakage check is completed as described above and the process is performed while supplying the reaction gas and the N 2 gas into the reactor 1, the gate valve 3, which was closed, is opened again to continue the inside of the reactor 1 It is kept at a low pressure.

이때 반응가스 및 N2가스를 반응로(1) 내로 공급하는 가스라인(9)은 반응로(1)의 플랜지와 연결설치된다.At this time, the gas line 9 for supplying the reaction gas and the N 2 gas into the reactor 1 is connected to the flange of the reactor 1.

종래에는 제2도 및 제3도에 도시한 바와 같이 반응로의 플랜지(10)에 숫나사산(11a)이 형성된 제1가스라인(11)이 용접고정되어 있고 상기 제1가스라인(11)의 내부에는 외주면으로 오링(12)이 감싸여진 석영재질의 노즐(13)이 결합되어 있어 제2가스라인(14)의 돌출부(14a)를 오링(12)에 밀착시킨 상태에서 암나사산이 형성된 조임나사(15)를 제1가스라인(11)의 숫나사산(11a)에 결합시켜 조여줌에 따라 제2가스라인(14)이 제1가스라인(11)측으로 이동하면서 오링(12)를 눌러주게 되므로 가스라인의 연결부가 씰링되도록 되어있다.Conventionally, as shown in FIGS. 2 and 3, the first gas line 11 having the male thread 11a formed on the flange 10 of the reactor is welded and fixed. The inside of the outer ring is surrounded by the O-ring 12, the quartz nozzle 13 is coupled to the tightening screw in which the female thread is formed in the state in which the projection 14a of the second gas line 14 in close contact with the O-ring 12 ( As the 15 is coupled to the male thread 11a of the first gas line 11 and tightened, the second gas line 14 moves to the first gas line 11 and presses the O-ring 12, thereby gas The connection of the line is to be sealed.

그러나 이러한 종래의 장치는 오링(12)을 이용하여 가스라인의 연결부를 씰링하도록 되어 있어 반응로의 플랜지(10)를 통해 전도된 고온의 열에 의해 오링(12)이 쉽게 파손되거나, 가스라인의 연결시 제2가스라인(14)의 돌출부(14a)에 의해 눌려 변형되므로 인해 가스라인의 연결부에서 가스가 누설되는 문제점이 있었다.However, such a conventional device is designed to seal the connection of the gas line using the O-ring 12, so that the O-ring 12 is easily broken by the high temperature heat conducted through the flange 10 of the reactor, or the connection of the gas line. When pressed by the protrusion 14a of the second gas line 14, there is a problem that the gas leaks from the connection of the gas line.

이에 따라 가스라인의 연결부를 씰링하는 오링(12)을 자주 교체시켜 주어야 되었으므로 장비의 가동율을 저하시키게 되는 문제점을 갖게 된다.Accordingly, the O-ring 12 for sealing the connection portion of the gas line has to be replaced frequently, which causes a problem of lowering the operation rate of the equipment.

본 고안은 종래의 이와 같은 문제점을 해결하기 위해 안출한 것으로서, 그 구조를 개선하여 가스라인의 연결부를 완벽하게 씰링시킬 수 있도록 하는데 그 목적이 있다.The present invention has been made to solve such a problem in the prior art, the purpose is to improve the structure to completely seal the connection of the gas line.

상기 목적을 달성하기 위해 본 고안의 형태에 따르면, 반응로의 플랜지와 고정된 제1가스라인에 제2가스라인을 조임나사로 연결시키도록 된 것에 있어서, 상기 제1, 2가스라인 사이에 가스켓을 설치하여 상기 제1, 2가스라인과 가스켓이 요철부에 의해 밀착되도록 하여서 된 웨이퍼 저압증착 장비의 가스라인 연결장치가 제공된다.In order to achieve the above object, according to the aspect of the present invention, the gasket is connected between the first and second gas lines, in that the second gas line is connected to the flange of the reactor and the first gas line fixed by the fastening screw. Provided is a gas line connection device for wafer low pressure deposition equipment in which the first and second gas lines and the gasket are brought into close contact with the uneven portion.

이하, 본 고안을 일실시예로 도시한 첨부된 도면 제4도 제5도는 참고로 하여 더욱 상세히 설명하면 다음과같다.Hereinafter, with reference to the accompanying drawings showing the present invention as an embodiment Figure 4 and Figure 5 will be described in more detail as follows.

첨부도면 제4도는 본 고안 장치를 나타낸 분해 사시도이고, 제5도는 제4도의 결합상태 종단면도로서, 본 고안은 반응로의 플랜지(10)에 제1가스라인(16)이 고정되어 있고 상기 제1가스라인(16)에는 숫나사산(17a)이 형성된 조임나사(17)가 끼워져 있으며 제2가스라인(l8)에는 암나사산(19a)이 형성된 또 다른 조임나사(19)가 끼워져 있어 상기 제1가스라인(16)에 가스켓(20)과 제2가스라인(18)을 차례로 접속시킨 다음 조임나사(17)(19)에 형성된 나사산(17a)(19a)을 결합시켜 주므로서 제1, 2가스라인(16)(18)이 상호 연결되도록 되어있다.4 is an exploded perspective view of the device of the present invention, and FIG. 5 is a longitudinal cross-sectional view of the coupled state of FIG. 4, in which the first gas line 16 is fixed to the flange 10 of the reactor. The first gas line 16 has a tightening screw 17 with a male thread 17a formed therein, and the second gas line l8 has another tightening screw 19 with a female thread 19a formed therein. The gasket 20 and the second gas line 18 are connected to the gas line 16 one by one, and then the first and second gases are joined by screwing the threads 17a and 19a formed on the tightening screws 17 and 19. Lines 16 and 18 are intended to be interconnected.

이때 상기 제1, 2가스라인(16)(18)과 가스켓(20)을 돌출부와 요입홈부에 의해 긴밀히 밀착되도록 되어있다.At this time, the first and second gas lines 16 and 18 and the gasket 20 are in close contact with the protrusion and the recess groove.

본 고안의 일실시예에서는 제1, 2가스라인(16)(18)의 이음부 단축에 돌출부(22)를 형성하고 상기 이음부사이에 설치되는 가스켓(20)에 상기 돌출부(22)가 끼워져 형합될 수 있도록 동일한 형상의 요입홈부(21)를 형성하였다.In an embodiment of the present invention, the protrusions 22 are formed on the shortened joints of the first and second gas lines 16 and 18, and the protrusions 22 are fitted to the gaskets 20 installed between the joints. Concave indentation groove 21 of the same shape to be formed.

이와는 반대로 가스켓(20)에 돌출부를 형성하고 제1, 2가스라인의 이음부 단축에 요입홈부를 형성하는 경우에도 동일한 효과를 나타낸다.On the contrary, when the protrusion is formed on the gasket 20 and the recess groove is formed on the short axis of the joint of the first and second gas lines, the same effect is obtained.

돌출부와 요입홈부의 단면형상은 반구형이나 삼각형으로 하는 것이 바람직하다.The cross-sectional shape of the protruding portion and the recessed groove portion is preferably hemispherical or triangular.

이는 접촉면적을 증대시켜 씰링효율을 극대화시킬 수 있도록 하기 위함이다.This is to increase the contact area to maximize the sealing efficiency.

또한 반응로의 고온에 의해 가스켓(20)이 변경되는 것을 방지하기 위해 재질은 니켈(Ni)이나 스테인레스 스틸(SUS)로 하는 것이 바람직하다.In addition, in order to prevent the gasket 20 from being changed by the high temperature of the reactor, the material is preferably nickel (Ni) or stainless steel (SUS).

이와 같이 구성된 본 고안의 작용효과를 설명하면 다음과 같다.Referring to the effect of the present invention configured as described above are as follows.

제1가스라인(16)에 숫나사산(17a)이 형성된 조임나사(17)를 끼운 후 제1가스라인(16)을 플랜지(10)에 용접고정한 다음 제1가스라인(16)의 이음부에 가스켓(20)을 밀착시키면 이들의 접속부가 돌출부 및 요입홈부에의해 긴밀하게 접속된다.Insert the tightening screw 17 with the male thread 17a formed in the first gas line 16, and then fix the first gas line 16 to the flange 10 by welding. When the gasket 20 is brought into close contact, these connecting portions are closely connected by the protrusions and the recesses.

이와 같이 제1가스라인(16)과 가스켓(20)을 밀착시킨 상태에서 제2가스라인(18)의 이음부를 가스켓(20)의 다른 일측면에 접속시키고 조임나사(17)(19)를 상호 조여주기만 하면 제1, 2가스라인(16)(18)과 가스켓(20)에 형성된 돌출부 및 요입홈부가 상호 긴밀하게 접속되므로 이들 사이가 완벽하게 씰링된 상태로 연결된다.In this way, while the first gas line 16 and the gasket 20 are in close contact, the joint of the second gas line 18 is connected to the other side of the gasket 20, and the tightening screws 17 and 19 are mutually connected. Only tightening, since the protrusions and recesses formed in the first and second gas lines 16 and 18 and the gasket 20 are closely connected to each other, they are connected in a completely sealed state.

이때 제1, 2가스라인(16)(18)의 이음부 사이를 긴밀하게 씰링시킨 가스켓(20)은 강도가 큰 금속재질로 되어 있어 반응로의 고온에 의해 변형될 염려가 없게 되므로 가스가 누설되는 것을 방지하게 된다.At this time, the gasket 20 which tightly seals between the joints of the first and second gas lines 16 and 18 is made of a metal material of high strength so that there is no fear of deformation due to the high temperature of the reactor, so that gas leaks. To prevent it.

이에 따라 제1, 2가스라인(16)(18)의 누설여부 확인작업시 누설여부의 조사에 소요되는 시간(대략 4-6시간)을 줄일 수 있게 됨은 물론 장비 가동율을 증대시킬 수 있게 되므로 생산성이 극대화되는 효과를 가지게 된다.Accordingly, it is possible to reduce the time (approximately 4-6 hours) required to investigate leakage of the first and second gas lines 16 and 18 and to increase the equipment utilization rate. This will have the effect of maximizing.

Claims (4)

반응로의 플랜지와 고정된 제1가스라인(16)에 제2가스라인(18)을 조임나사(17)(19)로 연결시키도록 된것에 있어서, 상기 제1, 2가스라인(16)(18)의 이음부 단축에 돌출부를 형성하고 상기 제1, 2가스라인의 이음부 사이에는 상기 돌출부가 형합되도록 동일한 형상의 요입홈부를 가진 가스켓(20)을 설치하여서 됨을 특징으로 하는 웨이퍼 저압증착 장비의 가스라인 연결장치.In order to connect the second gas line 18 with the tightening screws 17 and 19 to the first gas line 16 fixed to the flange of the reactor, the first and second gas lines 16 ( Low pressure deposition equipment, characterized in that to form a protrusion on the shortening of the joint portion of 18) and the gasket 20 having a concave groove of the same shape so that the protrusion is joined between the joint of the first, second gas line. Gas line connections. 제1항에 있어서, 상기 제1, 2가스라인(16)(18)의 이음부 단축에 용입홈부를 형성하고 그 사이에 설치되는 가스켓에는 상기 요입홈부에 형합되도록 동일한 형상의 돌출부를 형성하여서 됨을 특징으로 하는 웨이퍼 저압증착 장비의 가스라인 연결장치.According to claim 1, wherein the penetration groove portion is formed in the shortening of the joint portion of the first and second gas lines (16, 18) and the gasket provided therebetween to form a protrusion having the same shape to be fitted to the recess groove portion. Gas line connection device of the wafer low pressure deposition equipment characterized in that. 제1항 또는 제2항에 있어서, 요철부 (21)(22)의 단면이 반구형상 또는 삼각형상을 갖도록 형성함을 특징으로 하는 웨이퍼 저압증착 장비의 가스라인 연결장치.The gas line connection device of claim 1 or 2, wherein a cross section of the uneven portion (21) is formed to have a hemispherical shape or a triangular shape. 제1항에 있어서, 상기 가스켓을 니켈 또는 스테인레스 스틸재질로 된 것을 특징으로 하는 웨이퍼 저압증착 장비의 가스라인 연결장치.The gas line connection apparatus of claim 1, wherein the gasket is made of nickel or stainless steel.
KR2019930003760U 1993-03-15 1993-03-15 Gas line connecting apparatus of wafer low pressure deposition appratus KR960002544Y1 (en)

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KR2019930003760U KR960002544Y1 (en) 1993-03-15 1993-03-15 Gas line connecting apparatus of wafer low pressure deposition appratus

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KR960002544Y1 true KR960002544Y1 (en) 1996-03-27

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