KR960002082B1 - Hydrogenating method of tft - Google Patents
Hydrogenating method of tft Download PDFInfo
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- KR960002082B1 KR960002082B1 KR1019920027068A KR920027068A KR960002082B1 KR 960002082 B1 KR960002082 B1 KR 960002082B1 KR 1019920027068 A KR1019920027068 A KR 1019920027068A KR 920027068 A KR920027068 A KR 920027068A KR 960002082 B1 KR960002082 B1 KR 960002082B1
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- South Korea
- Prior art keywords
- oxide film
- thin film
- metal
- film transistor
- tft
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000010408 film Substances 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000005984 hydrogenation reaction Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 2
- 229910052721 tungsten Inorganic materials 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
Description
본 발명의 박막 트랜지스터의 수소화 처리 방법에 관한 것으로, 특히, 기판의 온도를 높여, 적층구조내에 존재하는 수소를 이용하여 수소화처리를 이행함으로써, 박막 트랜지스터의 온 전류를 증가시키고 오프 전류를 감소시키는 박막 트랜지스터의 수소화 처리 방법에 관한 것이다.In particular, the present invention relates to a hydrogenation method of a thin film transistor, and more particularly, to increase the temperature of a substrate and to perform hydrogenation using hydrogen present in a stacked structure, thereby increasing the on current and decreasing the off current of the thin film transistor. The present invention relates to a hydrogenation method of a transistor.
일반적으로 박막 트랜지스터를 이용하여 SRAM(Static Random Access Memory)셀을 제조하는 공정을 다음과 같은 순서로 진행된다.In general, a process of manufacturing a static random access memory (SRAM) cell using a thin film transistor is performed in the following order.
먼저, 반도체 기판내에 웰을 형성한 후, 소자분리산화막을 형성하고, 그후 벌크(Bulk) 트랜지스터를 형성한후, 소자간 연결구조를 형성한후, 박막 트랜지스터를 형성한다. 그 후 금속배선공정을 이행한 다음, 보호막형성공정으로 SRAM셀을 제조한다.First, a well is formed in a semiconductor substrate, an element isolation oxide film is formed, a bulk transistor is formed thereafter, a connection structure between elements is formed, and then a thin film transistor is formed. After that, the metal wiring process is performed, and then a SRAM cell is manufactured by the protective film forming process.
이때, 상술한 제조공정중, 박막 트랜지스터를 형성한 후에, 언도프드(Undoped) 산화막과 도프드(doped) 산화막을 차례로 그 상부에 도포한 후, 금속(Al,TI,Ta등과 같은 내화성 금속과 그 금속의 화합물)을 도포할때, 금속의 접촉성과 스탭커브리지 특성을 양호하도록 하기 위해, 기판에 약 150° 정도의 온도를 저기압하(10-8Torr 이하)에서 약 60초 동안 인가하게 된다.(10000Å 두께 기준).At this time, after the thin film transistor is formed in the above-described manufacturing process, an undoped oxide film and a doped oxide film are sequentially applied thereon, and then refractory metals such as metals (Al, T I , T a, etc.) are applied. And a compound of the metal) to apply a temperature of about 150 ° to the substrate for about 60 seconds under low pressure (10 -8 Torr or less) in order to improve the contact and step-bridge characteristics of the metal. (Based on 10000 기준 thickness).
그러나, 본 발명은 상술한 종래의 제조 공정에 비해, 추가의 장비나 공정이 필요하지 않고 기존의 장비에 기존의 공정을 변화시켜 박막 트랜지스터의 온전류와 오프 전류비를 3배이상 높혀서 안정된 SRAM 셀 동작을 실현시키는 것을 목적으로 한다.However, the present invention does not require additional equipment or processes compared to the conventional manufacturing process described above, and changes the existing process to existing equipment, thereby increasing the on-current and off-current ratios of the thin film transistor by more than three times, thereby making it possible to stabilize the SRAM cell. The purpose is to realize the operation.
따라서, 상기 목적을 달성하기 위해 본 발명에서는 종래의 방법과는 다르게 금속을 도포하기 이전이나 금속을 도포하는 과정에서 기판의 온도를 약 500℃ 정도까지 올려 박막트랜지스터의 온 전류를 증가시키고 오프 전류를 감소시켜 박막트랜지스터의 온 전류와 오프 전류비를 증가시키는 방법을 제공하는 것을 특징으로 한다.Therefore, in order to achieve the above object, in the present invention, unlike the conventional method, the temperature of the substrate is increased to about 500 ° C. before applying the metal or in the process of applying the metal, thereby increasing the on current of the thin film transistor and increasing the off current. It provides a method of increasing the on-current and off-current ratio of the thin film transistor by reducing.
이하, 본 발명을 한 실시예를 참고로 하여 상세히 설명하기로 한다. 일반적으로 다결정 실리콘이나 비정질 실리콘으로 제작되어지는 박막트랜지스터의 특성은 그레인 경계에 존재하는 결함(결정결함 또는 트랩 센터, 댕글링 본드라고하며 그레인과 그레인 사이의 원자 배열 차이에 의해 생성되며 일정한 크기의 에너지 준위를 가지고서 작은 크기의 이온화된 원자나 전자 또는 정공을 받거나 내보내는 역할을 함)에 의해 특성이 변하는데 이러한 결함들에 수소 원자나 이온화된 수소원자를 채워 넣으면 전자나 정공의 이동도가 증가되어 온 전류가 증가되고 접합을 통한 누설 전류가 감소하여 오프 전류가 감소하게 된다. 이를 수소화처리라고 하는데 보통 최종공정인 보호막 형성 공정에서 수소공급원(NH3,SiH4등)을 주입하며 일정한 온도(약450℃)에서 30분 정도 진행한다.Hereinafter, with reference to an embodiment of the present invention will be described in detail. Generally, thin film transistors made of polycrystalline or amorphous silicon are characterized by defects in grain boundaries (crystal defects or trap centers, dangling bonds), which are created by the difference in atomic arrangement between grains and grains, Properties change due to the small size of ionized atoms, electrons, or holes, which are transported to or out of the hole). Filling these defects with hydrogen or ionized hydrogen atoms increases electron or hole mobility. The current increases and the leakage current through the junction decreases, resulting in a decrease in off current. This is called hydrogenation, and the hydrogen source (NH 3 , SiH 4, etc.) is injected in the protective film formation process, which is the final process, and proceeds at a constant temperature (about 450 ° C.) for about 30 minutes.
본 발명에서는 금속을 도포하는 장비(보통 스퍼터링 방식과 증착 방식으로 도포하는 장비가 많이 쓰임)를 사용하여 금속을 도포하기 전이나 도포중에 기판의 온도를 약 500℃ 정도로 높여 산화막이나 폴리실리콘 등과 같은 적층 구조내에 존재하는 수소를 이용하여 수소화 처리를 진행하는 방법에 관한 것으로, 이하 본 발명의 공정을 순서대로 설명하기로 한다.In the present invention, by using a metal coating equipment (usually a lot of equipment used for sputtering and vapor deposition method) to increase the temperature of the substrate to about 500 ℃ before or during metal coating lamination such as oxide film or polysilicon The present invention relates to a method of performing a hydrogenation process using hydrogen present in a structure, and the process of the present invention will be described in order below.
먼저 반도체 기판에 웰을 형성하고 소자격리구조를 형성하는 공정을 이행한 후, 벌크 트랜지스터를 형성하고 소자간 연결구조 형성을 형성한 후 박막트랜지스터(TFT)를 형성한다. 그후 언도프드 산화막을 도포하는데 보론이나 인과 같은 불순물이 첨가되지 않은 산화막으로 박막트랜지스터와 후속 도프드 산화막과의 격리를 위하여 도포한다. 본 발명에서 적용하는 수소화처리 방법의 효과를 극대화 시키기 위해서는 상기 언도프드 산화막의 두께를 공정에서 허용하는 최소의 두께로(~500Å) 유지할 필요가 있다. 다음 공정으로는 도프드 산화막을 도포하는 공정인데, 상술한 공정이 완료된 후에는 금속과 하층의 도전층과의 접속을 위한 콘택을 형성하고 그 상부에 금속을 도포하는 공정(Al,Ti,TiN,Ta,W,Mo 등 포함)을 하게 되는데, 금속 도포공정은보통5×10-8Torr 이하의 진공상태에서 진행한다. 수소화 처리 효과를 얻기 위해 본 발명은 금속도포 장비의 고 진공도내에서 기판의 뒷면에 약 500℃ 정도의 온도를 가하게 되는데 온도를 가하는 순서에 따라 'AL'도포전에 가열하는 방법과 'Al'도포중에 가열하는 방법과 'Al'도포후에 가열하는 세가지 방법이 있다.First, a well is formed in a semiconductor substrate, and a device isolation structure is formed. Then, a bulk transistor is formed, a connection structure between devices is formed, and a thin film transistor (TFT) is formed. Thereafter, an undoped oxide film is applied, and an oxide film to which impurities such as boron or phosphorus are not added is applied for isolation between the thin film transistor and the subsequent doped oxide film. In order to maximize the effect of the hydroprocessing method applied in the present invention, it is necessary to maintain the thickness of the undoped oxide film to a minimum thickness (˜500 kPa) allowed in the process. The next step is to apply the doped oxide film. After the above-mentioned steps are completed, a process for forming a contact for the connection between the metal and the lower conductive layer and coating the metal on the upper layer (Al, Ti, TiN, Ta, W, Mo, etc.), the metal coating process is usually carried out in a vacuum of 5 × 10 -8 Torr or less. In order to obtain a hydrogenation effect, the present invention applies a temperature of about 500 ° C. to the back side of the substrate within the high vacuum degree of the metal coating equipment. The method of heating before 'AL' and 'Al' is applied in order of applying the temperature. There are three methods of heating and heating after 'Al' coating.
위의 세가지 방법에 대해서 자세히 설명하면 다음과 같음The above three methods are explained in detail as follows.
Al 도포전에 가열Heating before Al
'Al'도포전 5×10-8Torr 이하의 진공도 상태의 챔버내에서 가열장치를 이용하여 약 500℃로 약 5min 이내의 시간동안 가열Heated at about 500 ℃ for less than 5 minutes using a heating device in a chamber with a vacuum degree of 5 × 10 -8 Torr or less before 'Al' application
'Al'도포진행(5×10-8Torr 이하 진공도, 기판온도 200℃이하)'Al' application progress (Vacuum degree under 5 × 10 -8 Torr, substrate temperature below 200 ℃)
Al 도포중의 가열Heating during Al coating
'Al'을 도포하면서 기판의 온도를 높이면 양호한 스탭커브리지 특성을 갖는 금속 배선층과 함께 수소화처리 효과를 얻을 수 있다.When the temperature of the substrate is increased while applying 'Al', the hydrogenation effect can be obtained together with the metal wiring layer having good step bridge characteristics.
'Al'도포 진행(5×10-8Torr 이하 진공도, 기판온도 500℃ 부근, 도포시간은 'Al'의 두께에 따라 다르나 대부분 5min 이내임)'Al' application progress (Vacuum degree below 5 × 10 -8 Torr, substrate temperature around 500 ℃, application time varies depending on the thickness of 'Al' but most are within 5min)
'Al'도포후의 가열 방법은 첫번째 방법인 'Al'도포전에 가열하는 방법의 역순으로 진행한다.The heating method after 'Al' coating proceeds in the reverse order of the heating method before 'Al' coating, which is the first method.
최종적으로 후속 금속 배선공정 및 보호막 형성공정을 진행하여, SRAM 소자를 제조 공정을 완료한다.Finally, a subsequent metal wiring process and a protective film forming process are performed to complete the manufacturing process of the SRAM device.
이상에서 살펴본 바와같이 본 발명에 따르면, 박막트랜지스터의 온 전류와 오프 전류비를 3배이상 높일 수 있어 안정된 SRAM 셀 동작을 실현할 수 있으며, 또한 본 발명을 적용하기 위해 추가의 장비나 공정이 필요하지 않고 기존의 장비에 기존의 공정을 변화시켜 적용할 수 있는 장점이 있다.As described above, according to the present invention, the on-state and off-current ratio of the thin film transistor can be increased by more than three times to realize stable SRAM cell operation, and additional equipment or processes are not required to apply the present invention. There is an advantage that can be applied to existing equipment by changing the existing process.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920027068A KR960002082B1 (en) | 1992-12-31 | 1992-12-31 | Hydrogenating method of tft |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920027068A KR960002082B1 (en) | 1992-12-31 | 1992-12-31 | Hydrogenating method of tft |
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| Publication Number | Publication Date |
|---|---|
| KR940016922A KR940016922A (en) | 1994-07-25 |
| KR960002082B1 true KR960002082B1 (en) | 1996-02-10 |
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| KR1019920027068A KR960002082B1 (en) | 1992-12-31 | 1992-12-31 | Hydrogenating method of tft |
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| KR (1) | KR960002082B1 (en) |
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- 1992-12-31 KR KR1019920027068A patent/KR960002082B1/en not_active IP Right Cessation
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| KR940016922A (en) | 1994-07-25 |
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