KR950034258A - Self-Refresh Cycle Control with Temperature Change Detector - Google Patents
Self-Refresh Cycle Control with Temperature Change Detector Download PDFInfo
- Publication number
- KR950034258A KR950034258A KR1019940010993A KR19940010993A KR950034258A KR 950034258 A KR950034258 A KR 950034258A KR 1019940010993 A KR1019940010993 A KR 1019940010993A KR 19940010993 A KR19940010993 A KR 19940010993A KR 950034258 A KR950034258 A KR 950034258A
- Authority
- KR
- South Korea
- Prior art keywords
- temperature change
- self
- output
- change detector
- chip
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40626—Temperature related aspects of refresh operations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Abstract
본 발명은 칩의 온도 변화를 감지하는 온도 변화 감지기의 출력을 이용하여 셀프 리프레쉬 속도를 결정하는 카운터의 주기를 조절하도록 함으로써, 소자의 전력 소모를 감소시킨 셀프 리프레쉬 주기 조절장치에 관한 기술이다.The present invention relates to a self-refresh cycle control device that reduces the power consumption of the device by adjusting the period of the counter for determining the self-refresh rate using the output of the temperature change detector for detecting the temperature change of the chip.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 통상적인 링 발진기를 도시한 회로도, 제5도는 본 발명에 의한 셀프 리프레쉬 주기 조절장치의 제2실시예도.FIG. 2 is a circuit diagram showing a conventional ring oscillator, and FIG. 5 is a second embodiment of a self refresh cycle control apparatus according to the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940010993A KR0125302B1 (en) | 1994-05-20 | 1994-05-20 | Controller for self-refresh by using temperature detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940010993A KR0125302B1 (en) | 1994-05-20 | 1994-05-20 | Controller for self-refresh by using temperature detector |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950034258A true KR950034258A (en) | 1995-12-28 |
KR0125302B1 KR0125302B1 (en) | 1997-12-09 |
Family
ID=19383439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940010993A KR0125302B1 (en) | 1994-05-20 | 1994-05-20 | Controller for self-refresh by using temperature detector |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0125302B1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030035835A (en) * | 2001-10-29 | 2003-05-09 | 미쓰비시덴키 가부시키가이샤 | Semiconductor device |
KR100490297B1 (en) * | 1997-12-29 | 2005-08-18 | 주식회사 하이닉스반도체 | Reference voltage generation circuit |
KR100803352B1 (en) * | 2006-06-12 | 2008-02-14 | 주식회사 하이닉스반도체 | Apparatus and Method for Controlling Refresh of Semiconductor Memory |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100520580B1 (en) * | 2002-07-16 | 2005-10-10 | 주식회사 하이닉스반도체 | Semiconductor memory device |
-
1994
- 1994-05-20 KR KR1019940010993A patent/KR0125302B1/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100490297B1 (en) * | 1997-12-29 | 2005-08-18 | 주식회사 하이닉스반도체 | Reference voltage generation circuit |
KR20030035835A (en) * | 2001-10-29 | 2003-05-09 | 미쓰비시덴키 가부시키가이샤 | Semiconductor device |
KR100803352B1 (en) * | 2006-06-12 | 2008-02-14 | 주식회사 하이닉스반도체 | Apparatus and Method for Controlling Refresh of Semiconductor Memory |
Also Published As
Publication number | Publication date |
---|---|
KR0125302B1 (en) | 1997-12-09 |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20100920 Year of fee payment: 14 |
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LAPS | Lapse due to unpaid annual fee |