KR950034258A - Self-Refresh Cycle Control with Temperature Change Detector - Google Patents

Self-Refresh Cycle Control with Temperature Change Detector Download PDF

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Publication number
KR950034258A
KR950034258A KR1019940010993A KR19940010993A KR950034258A KR 950034258 A KR950034258 A KR 950034258A KR 1019940010993 A KR1019940010993 A KR 1019940010993A KR 19940010993 A KR19940010993 A KR 19940010993A KR 950034258 A KR950034258 A KR 950034258A
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KR
South Korea
Prior art keywords
temperature change
self
output
change detector
chip
Prior art date
Application number
KR1019940010993A
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Korean (ko)
Other versions
KR0125302B1 (en
Inventor
유종학
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940010993A priority Critical patent/KR0125302B1/en
Publication of KR950034258A publication Critical patent/KR950034258A/en
Application granted granted Critical
Publication of KR0125302B1 publication Critical patent/KR0125302B1/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40626—Temperature related aspects of refresh operations

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)

Abstract

본 발명은 칩의 온도 변화를 감지하는 온도 변화 감지기의 출력을 이용하여 셀프 리프레쉬 속도를 결정하는 카운터의 주기를 조절하도록 함으로써, 소자의 전력 소모를 감소시킨 셀프 리프레쉬 주기 조절장치에 관한 기술이다.The present invention relates to a self-refresh cycle control device that reduces the power consumption of the device by adjusting the period of the counter for determining the self-refresh rate using the output of the temperature change detector for detecting the temperature change of the chip.

Description

온도 변화 감지기를 이용한 셀프 리프레쉬 주기 조절장치Self-Refresh Cycle Control with Temperature Change Detector

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 통상적인 링 발진기를 도시한 회로도, 제5도는 본 발명에 의한 셀프 리프레쉬 주기 조절장치의 제2실시예도.FIG. 2 is a circuit diagram showing a conventional ring oscillator, and FIG. 5 is a second embodiment of a self refresh cycle control apparatus according to the present invention.

Claims (4)

셀프 리프레쉬 동작을 위해 일정한 주기를 갖는 펄스신호를 출력하는 링 발진기와, 칩의 온도 변화를 감지하여 온도 감지신호를 출력하는 온도 변화감지기와, 상기 온도 변화 감지기의 출력에 의해 제어되어 상기 링 발진기의 출력을 적정 비율로 분주하는 분주회로를 포함하는 것을 특징으로 하는 셀프 리프레쉬 주기 조절장치.A ring oscillator for outputting a pulse signal having a constant period for self-refresh operation, a temperature change detector for sensing a temperature change of the chip and outputting a temperature detection signal, and controlled by an output of the temperature change detector, Self-refreshing cycle control device comprising a frequency division circuit for distributing the output at an appropriate ratio. 제1항에 있어서, 칩의 온도 변화에 따라 각기 다른 분주비율로 링 발진기의 출력을 분주하기 위하여, 두개 이상의 온도 변화 감지기를 포함하는 것을 특징으로 하는 셀프 리프레쉬 주기 조절장치.2. The self-refresh period control device of claim 1, further comprising two or more temperature change detectors for dividing the output of the ring oscillator at different division ratios according to the temperature change of the chip. 칩의 온도 변화를 감지하여 온도 감지신호를 출력하는 온도 변화 감지기와, 상기 온도 변화 감지기의 출력에 의해 그 출력 펄스신호의 주기가 조절되는 링 발진기와, 상기 링 발진기의 출력을 적정 비율로 분주하는 분주회로를 포함하는 것을 특징으로 하는 셀프 리프레쉬 주기 조절장치.A temperature change detector for detecting a temperature change of the chip and outputting a temperature sensing signal, a ring oscillator whose period of the output pulse signal is adjusted by the output of the temperature change detector, and dividing the output of the ring oscillator at an appropriate ratio Self-refreshing cycle control device comprising a frequency division circuit. 제3항에 있어서, 칩의 온도 변화에 따라 각기 다른 주기의 펄스신호를 출력하기 위하여, 두개 이상의 온도 변화 감지기를 포함하는 것을 특징으로 하는 셀프 리프레쉬 주기 조절장치.4. The self-refresh period control device of claim 3, further comprising two or more temperature change detectors to output pulse signals having different periods according to the temperature change of the chip. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940010993A 1994-05-20 1994-05-20 Controller for self-refresh by using temperature detector KR0125302B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940010993A KR0125302B1 (en) 1994-05-20 1994-05-20 Controller for self-refresh by using temperature detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940010993A KR0125302B1 (en) 1994-05-20 1994-05-20 Controller for self-refresh by using temperature detector

Publications (2)

Publication Number Publication Date
KR950034258A true KR950034258A (en) 1995-12-28
KR0125302B1 KR0125302B1 (en) 1997-12-09

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KR1019940010993A KR0125302B1 (en) 1994-05-20 1994-05-20 Controller for self-refresh by using temperature detector

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030035835A (en) * 2001-10-29 2003-05-09 미쓰비시덴키 가부시키가이샤 Semiconductor device
KR100490297B1 (en) * 1997-12-29 2005-08-18 주식회사 하이닉스반도체 Reference voltage generation circuit
KR100803352B1 (en) * 2006-06-12 2008-02-14 주식회사 하이닉스반도체 Apparatus and Method for Controlling Refresh of Semiconductor Memory

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100520580B1 (en) * 2002-07-16 2005-10-10 주식회사 하이닉스반도체 Semiconductor memory device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100490297B1 (en) * 1997-12-29 2005-08-18 주식회사 하이닉스반도체 Reference voltage generation circuit
KR20030035835A (en) * 2001-10-29 2003-05-09 미쓰비시덴키 가부시키가이샤 Semiconductor device
KR100803352B1 (en) * 2006-06-12 2008-02-14 주식회사 하이닉스반도체 Apparatus and Method for Controlling Refresh of Semiconductor Memory

Also Published As

Publication number Publication date
KR0125302B1 (en) 1997-12-09

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