KR950030339A - Power Line Noise Reduction Device for Semiconductor Devices - Google Patents

Power Line Noise Reduction Device for Semiconductor Devices Download PDF

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Publication number
KR950030339A
KR950030339A KR1019940008969A KR19940008969A KR950030339A KR 950030339 A KR950030339 A KR 950030339A KR 1019940008969 A KR1019940008969 A KR 1019940008969A KR 19940008969 A KR19940008969 A KR 19940008969A KR 950030339 A KR950030339 A KR 950030339A
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KR
South Korea
Prior art keywords
power line
noise reduction
reduction device
semiconductor devices
line noise
Prior art date
Application number
KR1019940008969A
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Korean (ko)
Inventor
유종학
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940008969A priority Critical patent/KR950030339A/en
Publication of KR950030339A publication Critical patent/KR950030339A/en

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Abstract

본 발명은 반도체 소자의 전력선에 발생하는 노이즈를 감소시키기 위하여, 전원전압 패드와 접지전압 패드사이에 저항 소자와 캐패시턴스 소자로 구현한 전력선 노이즈 감소장치에 관한 것으로, 반도체 기억소자에서 기준전압 발생기 또는 전압 강하 변환기의 아날로그 회로부분에 전하를 공급하는 전원전압, 접지전압선을 노이즈에 안정된 형태로 구현하기 위한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power line noise reduction device implemented with a resistance element and a capacitance element between a power supply pad and a ground voltage pad in order to reduce noise generated in a power line of a semiconductor device. This is to realize the power supply voltage and ground voltage line that supplies charge to analog circuit part of the drop converter in a stable form to noise.

Description

반도체 소자의 전력선 노이즈 감소장치Power Line Noise Reduction Device for Semiconductor Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 의한 전력선 배치도이다.2 is a power line arrangement according to the present invention.

Claims (2)

반도체 소자의 전력선에 발생하는 노이즈를 감소시키기 위하여, 제1전위 패드에 제1단자기 연결되고 제1전위 전력선에 제2단자가 연결되는 저항 소자와, 제1전위 전력성에 제1단자가 연결되고 제2전위 전력선에 제2단자가 연결되는 캐패시턴스 소자로 구현한 전력선 노이즈 감소장치.In order to reduce noise generated in the power line of the semiconductor device, a resistor device having a first terminal connected to the first potential pad and a second terminal connected to the first potential power line, and a first terminal connected to the first potential power, A power line noise reduction device implemented with a capacitance element having a second terminal connected to a second potential power line. 제1항에 있어서, 상기 제2 전위 전력선과 제2전위 패드 사이에 저항 소자를 추가로 포함하는 것을 특징으로 하는 전력선 노이즈 감소장치.2. The apparatus of claim 1, further comprising a resistor element between the second potential power line and the second potential pad. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019940008969A 1994-04-27 1994-04-27 Power Line Noise Reduction Device for Semiconductor Devices KR950030339A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940008969A KR950030339A (en) 1994-04-27 1994-04-27 Power Line Noise Reduction Device for Semiconductor Devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940008969A KR950030339A (en) 1994-04-27 1994-04-27 Power Line Noise Reduction Device for Semiconductor Devices

Publications (1)

Publication Number Publication Date
KR950030339A true KR950030339A (en) 1995-11-24

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ID=66677932

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940008969A KR950030339A (en) 1994-04-27 1994-04-27 Power Line Noise Reduction Device for Semiconductor Devices

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KR (1) KR950030339A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101034612B1 (en) * 2008-11-05 2011-05-12 주식회사 하이닉스반도체 Semiconductor device and method for testing powersource noise of the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101034612B1 (en) * 2008-11-05 2011-05-12 주식회사 하이닉스반도체 Semiconductor device and method for testing powersource noise of the same

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