KR950025850A - Heat treatment device of thin film - Google Patents

Heat treatment device of thin film Download PDF

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Publication number
KR950025850A
KR950025850A KR1019940002820A KR19940002820A KR950025850A KR 950025850 A KR950025850 A KR 950025850A KR 1019940002820 A KR1019940002820 A KR 1019940002820A KR 19940002820 A KR19940002820 A KR 19940002820A KR 950025850 A KR950025850 A KR 950025850A
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KR
South Korea
Prior art keywords
heat treatment
wafer
support
fixed
chamber
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Application number
KR1019940002820A
Other languages
Korean (ko)
Inventor
경현수
신중호
최원성
Original Assignee
서성기
한국베리안 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 서성기, 한국베리안 주식회사 filed Critical 서성기
Priority to KR1019940002820A priority Critical patent/KR950025850A/en
Priority to US08/564,256 priority patent/US5791895A/en
Priority to EP95911781A priority patent/EP0702775A4/en
Priority to PCT/US1995/002008 priority patent/WO1995023427A2/en
Publication of KR950025850A publication Critical patent/KR950025850A/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/12Substrate holders or susceptors
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14Substrate holders or susceptors
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005Transport systems

Abstract

본 발명은 박판 열처리 장치를 개시한다.The present invention discloses a thin plate heat treatment apparatus.

본 발명은 진공챔버와 이 진공챔버의 내부에 고정설치되는 히이터 블럭과, 상기 히이터 블럭에 삽입되며 웨이퍼를 지지하고 히이터 블럭에 대해 웨이퍼를 자중에 의해 밀착시키는 클램프와, 상기 클램프에웨이퍼를 공급하는 웨이퍼 공급수단과, 상기 챔버에 설치되어 상기 클램프를 히이터 블럭에 대해 승강시키는 승강수단을 구비하여 된 것에 특징이 있으며, 이는 웨이퍼의 공급 및 취출이 용이하고 히이터 블럭에 대해 웨이퍼의 클램핑이 클램프의 자중에 의해 이루어지게 되므로 웨이퍼의 클램핑에 따른 웨이퍼의 변형을 방지할 수 있는 이점이 있다.The present invention provides a vacuum chamber and a heater block fixedly installed in the vacuum chamber, a clamp inserted into the heater block to support a wafer and closely attaching the wafer to the heater block by self-weight, and supplying a wafer to the clamp. Wafer supply means and the lifting means which is installed in the chamber to raise and lower the clamp with respect to the heater block, characterized in that it is easy to supply and take out the wafer, the clamping of the wafer with respect to the heater block is the weight of the clamp Since it is made by the has the advantage that can prevent the deformation of the wafer due to the clamping of the wafer.

Description

박막의 열처리 장치Heat treatment device of thin film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 따른 박막의 열처리 장치를 도시한 사시도,3 is a perspective view showing a heat treatment apparatus of a thin film according to the present invention;

제4도는 제3도에서 도시된 박판의 열처리 장치의 단면도.4 is a cross-sectional view of the heat treatment apparatus of the thin plate shown in FIG.

Claims (15)

진공챔버와, 이 진공챔버의 내부에 고정설치되는 히이터 블러과, 상기 히이터 블럭에 삽입되며 내부에 웨이퍼를 지지하고 히이터 블럭에 대해 웨이퍼를 그 자중에 의해 밀착시키는 클램프와, 상기 클램프에 웨이퍼를 공급하는 웨이퍼 공급수단과, 상기 챔버에 설치되어 상기 클램프를 히이터 블럭에 대해 승강시키는 승강수단을 구비하여 된 것을 특징으로 하는 박판의 열처리 장치.A vacuum chamber, a heater blur fixed to the inside of the vacuum chamber, a clamp inserted into the heater block to support the wafer therein and closely attach the wafer to the heater block by its own weight, and to supply the wafer to the clamp. And a wafer supply means and an elevating means provided in the chamber to elevate the clamp with respect to the heater block. 제1항에 있어서, 상기 클램프가 그 주면에 원주방향으로 웨이퍼 공급수단의 아암이 삽입되는 장공이 형성된 원통형의 본체와, 본체의 상단 가장자리에 그 중앙부로 소정길이 연장되는 둘레턱과, 상기 본체의 주면에 반경방향으로 소정길이 연장되며 그 단부에 지지공이 형성된 지지부와, 상기 본체의 내주면에 설치되어 상기 아암에 의해 공급되는 웨이퍼의 가장자리를 지지하는 복수개의 핑거를 구비하여 된 것을 특징으로 하는 박판의 열처리 장치.The cylindrical body of claim 1, wherein the clamp has a cylindrical body having a long hole into which the arm of the wafer supply means is inserted in a circumferential direction thereof, a circumferential jaw extending a predetermined length to the center portion of the upper edge of the body, A thin plate comprising a support portion having a predetermined length extending in a radial direction on a main surface thereof and having a support hole formed at an end thereof, and a plurality of fingers installed on the inner circumferential surface of the main body to support the edge of the wafer supplied by the arm. Heat treatment device. 제2항에 있어서, 상기 장공이 소정의 폭으로 본체의 원주방향으로 형성된 제1구멍과, 제1구멍으로부터 상기 폭보다 작은 폭으로 본체의 길이 방향으로 형성된 제2구멍으로 이루어진 것을 특징으로 하는 박판의 열처리 장치.The thin plate according to claim 2, wherein the long hole comprises a first hole formed in the circumferential direction of the main body with a predetermined width, and a second hole formed in the longitudinal direction of the main body with a width smaller than the width from the first hole. Heat treatment device. 제2항 또는 제3항에 있어서, 상기장공이 본체의 주면에 상호 대응되도록 쌍으로 형성된 것을 특징으로 하는 박판의 열처리 장치.4. The apparatus for heat treatment of thin plates according to claim 2 or 3, wherein the long holes are formed in pairs so as to correspond to the main surfaces of the main body. 제2항에 있어서, 상기 지지공의 하단부가 하방으로 확개된 확개부가 마련된 것을 특징으로 하는 박판의 열처리 장치.3. The apparatus for heat treatment of a thin plate according to claim 2, wherein an extension part in which a lower end of the support hole is extended downward is provided. 제2항 또는 제5항에 있어서, 상기 확개부의 확개각도가 90도인 것을 특징으로 하는 박판의 열처리 장치.The apparatus for heat treatment of thin sheets according to claim 2 or 5, wherein the angle of expansion of the extension part is 90 degrees. 제2항에 있어서, 상기 핑거의 상면이 소정의 각도로 단차진 것을 특징으로 하는 박판의 열처리 장치.3. The apparatus for heat treatment of thin sheets according to claim 2, wherein the upper surface of the finger is stepped at a predetermined angle. 제1항에 있어서, 상기 승강수단이 챔버의 바닥면에 고정된 베이스 판과, 이 베이스판에 수직으로 슬라이딩하게 설치되는 적어도 세개의 로드와, 챔버 바닥면의 하부로 노출된 각 로드의 단부를 연결하는 지지플레이트와, 이 지지플레이트의 중앙부에 고정된 이송부재와, 상기 베이스 판의 하면에 고정된 브라켓에 지지되어 상기 이송부재와 결합되는 볼스크류와, 상기 브라켓의 하면에 고정되어 볼스크류를 정 역회전시키는 액튜에이터를 구비하여 된 것을 특징으로 하는 박판의 열처리 장치.According to claim 1, wherein the elevating means is a base plate fixed to the bottom surface of the chamber, at least three rods installed to slide vertically to the base plate, and the end of each rod exposed to the bottom of the chamber bottom surface A support plate to be connected, a transfer member fixed to the center portion of the support plate, a ball screw supported on a bracket fixed to the lower surface of the base plate and coupled to the transfer member, and a ball screw fixed to the lower surface of the bracket. An apparatus for heat treatment of thin sheets, characterized by comprising an actuator for forward and reverse rotation. 제8항에 있어서, 상기 볼스크류와 액튜에이터의 회전축이 플랙시블 커플링에 의해 연결된 것을 특징으로 하는 박판의 열처리 장치.9. The apparatus for heat treatment of thin plates according to claim 8, wherein a rotation shaft of the ball screw and the actuator is connected by a flexible coupling. 제8항 또는 제9항에 있어서, 상기 챔버에 고정된 베이스판과 로드의 슬라이딩부에 설치된 벨로우즈가 더 구비된 것을 특징으로 하는 박판의 열처리 장치.10. The apparatus for heat treatment of a thin plate according to claim 8 or 9, further comprising a bellows provided to a base plate fixed to the chamber and a sliding part of the rod. 제10항에 있어서, 상기 챔버 내부에 상기 로드에 지지된 벨로우즈를 감싸는 원통형의 실드가 마련된 것을 특징으로 하는 박판의 열처리 장치.The thin plate heat treatment apparatus according to claim 10, wherein a cylindrical shield surrounding the bellows supported by the rod is provided in the chamber. 제8항에 있어서, 상기 액튜에이터가 서어보 모우터 또는 유입모우터인 것을 특징으로 하는 박판의 열처리 장치.The apparatus of claim 8, wherein the actuator is a servo motor or an inlet motor. 제8항에 있어서, 상기 볼스크류의 하단에 브레이크부가 더 구비되어 상기 이송부재에 가하여지는 자중에 의해 볼스크류가 회전하는 것을 방지할 수 있도록 구성된 것을 특징으로 하는 박판의 열처리 장치.The heat treatment apparatus of claim 8, wherein the lower end of the ball screw is further provided with a brake to prevent the ball screw from rotating due to its own weight applied to the transfer member. 제13항에 있어서, 상기 브레이크부가 볼스크류의 하단부에 설치된 디스크와, 상기 브레켓에 고정설치되며 상기 디스크와 인접되게 설치된 지지브라켓과, 이 지지브라켓에 고정되며 상기 디스크에 선택적으로 밀착되는 패드가 그 로드에 설치된 솔레노이드를 구비하여 된 것을 특징으로 하는 박판의 열처리 장치.The disk of claim 13, wherein the brake unit includes a disk installed at the lower end of the ball screw, a support bracket fixed to the bracket and installed adjacent to the disk, and a pad fixed to the support bracket and selectively adhered to the disk. A heat treatment apparatus for thin sheets, comprising: a solenoid provided on the rod. 제1항에 있어서, 상기 웨이퍼 공급수단이 상기 챔버의 내부에 고정된 액튜에이터와, 이 액튜에이터의 로드에 고정되며 그 단부에 웨이퍼 지지부가 마련된 아암을 구비하여 된 것을 특징으로 하는 박판의 열처리 장치.The apparatus of claim 1, wherein the wafer supply means comprises an actuator fixed inside the chamber, and an arm fixed to the rod of the actuator and provided with a wafer support at an end thereof. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940002820A 1994-02-17 1994-02-17 Heat treatment device of thin film KR950025850A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019940002820A KR950025850A (en) 1994-02-17 1994-02-17 Heat treatment device of thin film
US08/564,256 US5791895A (en) 1994-02-17 1995-02-15 Apparatus for thermal treatment of thin film wafer
EP95911781A EP0702775A4 (en) 1994-02-17 1995-02-15 Apparatus for thermal treatment of thin film wafer
PCT/US1995/002008 WO1995023427A2 (en) 1994-02-17 1995-02-15 Apparatus for thermal treatment of thin film wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940002820A KR950025850A (en) 1994-02-17 1994-02-17 Heat treatment device of thin film

Publications (1)

Publication Number Publication Date
KR950025850A true KR950025850A (en) 1995-09-18

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Application Number Title Priority Date Filing Date
KR1019940002820A KR950025850A (en) 1994-02-17 1994-02-17 Heat treatment device of thin film

Country Status (3)

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EP (1) EP0702775A4 (en)
KR (1) KR950025850A (en)
WO (1) WO1995023427A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5791895A (en) * 1994-02-17 1998-08-11 Novellus Systems, Inc. Apparatus for thermal treatment of thin film wafer
JP5080043B2 (en) 2006-08-31 2012-11-21 新電元工業株式会社 Semiconductor device manufacturing method, semiconductor device manufacturing jig, and semiconductor device manufacturing apparatus
CN110993550B (en) * 2019-12-25 2022-12-09 北京北方华创微电子装备有限公司 Semiconductor heat treatment equipment

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60169148A (en) * 1984-02-13 1985-09-02 Dainippon Screen Mfg Co Ltd Method and apparatus for conveying substrate
US5228501A (en) * 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
DE58905888D1 (en) * 1988-07-15 1993-11-18 Balzers Hochvakuum Holding device for a disc and application of the same.
WO1990013687A2 (en) * 1989-05-08 1990-11-15 N.V. Philips' Gloeilampenfabrieken Apparatus and method for treating flat substrates under reduced pressure
DE69130987T2 (en) * 1990-04-20 1999-09-30 Applied Materials Inc Device for treating semiconductor wafers
US5222310A (en) * 1990-05-18 1993-06-29 Semitool, Inc. Single wafer processor with a frame
JPH0651777U (en) * 1991-12-26 1994-07-15 日空工業株式会社 Vacuum dryer
KR960009975B1 (en) * 1993-04-26 1996-07-25 한국베리안 주식회사 Heat treating apparatus using the second space

Also Published As

Publication number Publication date
WO1995023427A2 (en) 1995-08-31
WO1995023427A3 (en) 1995-12-28
EP0702775A1 (en) 1996-03-27
EP0702775A4 (en) 1996-07-31

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