KR950021396U - Reactor for semiconductor oxide film growth device - Google Patents

Reactor for semiconductor oxide film growth device

Info

Publication number
KR950021396U
KR950021396U KR2019930026878U KR930026878U KR950021396U KR 950021396 U KR950021396 U KR 950021396U KR 2019930026878 U KR2019930026878 U KR 2019930026878U KR 930026878 U KR930026878 U KR 930026878U KR 950021396 U KR950021396 U KR 950021396U
Authority
KR
South Korea
Prior art keywords
reactor
oxide film
film growth
semiconductor oxide
growth device
Prior art date
Application number
KR2019930026878U
Other languages
Korean (ko)
Other versions
KR200156128Y1 (en
Inventor
김근호
Original Assignee
엘지반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지반도체주식회사 filed Critical 엘지반도체주식회사
Priority to KR2019930026878U priority Critical patent/KR200156128Y1/en
Publication of KR950021396U publication Critical patent/KR950021396U/en
Application granted granted Critical
Publication of KR200156128Y1 publication Critical patent/KR200156128Y1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
KR2019930026878U 1993-12-08 1993-12-08 Chamber for semiconductor oxide growth device KR200156128Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019930026878U KR200156128Y1 (en) 1993-12-08 1993-12-08 Chamber for semiconductor oxide growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019930026878U KR200156128Y1 (en) 1993-12-08 1993-12-08 Chamber for semiconductor oxide growth device

Publications (2)

Publication Number Publication Date
KR950021396U true KR950021396U (en) 1995-07-28
KR200156128Y1 KR200156128Y1 (en) 1999-09-01

Family

ID=19370246

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019930026878U KR200156128Y1 (en) 1993-12-08 1993-12-08 Chamber for semiconductor oxide growth device

Country Status (1)

Country Link
KR (1) KR200156128Y1 (en)

Also Published As

Publication number Publication date
KR200156128Y1 (en) 1999-09-01

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