KR950015638U - Source vacuum system of ion implanter - Google Patents

Source vacuum system of ion implanter

Info

Publication number
KR950015638U
KR950015638U KR2019930025228U KR930025228U KR950015638U KR 950015638 U KR950015638 U KR 950015638U KR 2019930025228 U KR2019930025228 U KR 2019930025228U KR 930025228 U KR930025228 U KR 930025228U KR 950015638 U KR950015638 U KR 950015638U
Authority
KR
South Korea
Prior art keywords
vacuum system
ion implanter
source vacuum
source
implanter
Prior art date
Application number
KR2019930025228U
Other languages
Korean (ko)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR2019930025228U priority Critical patent/KR950015638U/en
Publication of KR950015638U publication Critical patent/KR950015638U/en

Links

KR2019930025228U 1993-11-26 1993-11-26 Source vacuum system of ion implanter KR950015638U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019930025228U KR950015638U (en) 1993-11-26 1993-11-26 Source vacuum system of ion implanter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019930025228U KR950015638U (en) 1993-11-26 1993-11-26 Source vacuum system of ion implanter

Publications (1)

Publication Number Publication Date
KR950015638U true KR950015638U (en) 1995-06-19

Family

ID=60669942

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019930025228U KR950015638U (en) 1993-11-26 1993-11-26 Source vacuum system of ion implanter

Country Status (1)

Country Link
KR (1) KR950015638U (en)

Similar Documents

Publication Publication Date Title
DE69408017D1 (en) Ion implanter
DE69621411T2 (en) Closed electron drift ion source
DE69207212D1 (en) HIGH FREQUENCY ION SOURCE
DE69525980T2 (en) ELECTRON SOURCE
DE59306704D1 (en) Vacuum processing system
EP0480688A3 (en) Plasma source arrangement for ion implantation
DE69622463D1 (en) Ion beam processing apparatus
KR900012339A (en) Ion implanter
DE69330699T2 (en) Ion beam Abrasterungsvorrichtung
DE59107831D1 (en) Ion source
DE69303409D1 (en) Ion implanter device
KR900017084A (en) Ion source
KR950015638U (en) Source vacuum system of ion implanter
DE69122526D1 (en) Ion beam control system
KR960003081U (en) Ion source device of ion implanter
DE69525563T2 (en) ion implanter
DE3874386D1 (en) VACUUM ARC ION SOURCE.
DE69207641T2 (en) Electron cyclotron resonance ion source
KR940027594U (en) Ion source generator for ion implanter
KR950025875U (en) Ion implanter
GB8912569D0 (en) Ion beam source
DE59602769D1 (en) Ion source
KR970046680U (en) Vacuum treatment device of ion implantation system
KR920015759U (en) Wafer ion implanter
KR960025303U (en) Ion implanter

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination