KR950014378A - Single Crystal Manufacturing Method - Google Patents
Single Crystal Manufacturing Method Download PDFInfo
- Publication number
- KR950014378A KR950014378A KR1019930023580A KR930023580A KR950014378A KR 950014378 A KR950014378 A KR 950014378A KR 1019930023580 A KR1019930023580 A KR 1019930023580A KR 930023580 A KR930023580 A KR 930023580A KR 950014378 A KR950014378 A KR 950014378A
- Authority
- KR
- South Korea
- Prior art keywords
- metal
- single crystal
- mold
- melting
- metal ingot
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/08—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by cooling of the solution
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
본 발명은 진공 정밀 주조로에 의한 단결정 주물의 제조 방법에 있어서, 용융 금속이 주입된 주형을 저융점 금속용에 놓으므로써 저융점 금속이 주형의 열에 의해 녹으면서 주형의 자중으로 서서히 저융점 금속욕 속으로 침투하도록 하여 단결정 성장에 최적의 온도 구배 및 냉각 속도를 제공하는 것으로서, 수냉 냉각판을 사용하지 않고 적절한 온도 구배와 냉각 속도로 단결정 주물을 제조하는 것을 특징으로 한다.The present invention relates to a method for producing a single crystal casting by vacuum precision casting furnace, wherein a low melting point metal bath is gradually melted by the heat of the mold while the molten metal is injected into a low melting point metal. By penetrating into the inside to provide the optimum temperature gradient and cooling rate for single crystal growth, it is characterized in that the single crystal casting is produced at an appropriate temperature gradient and cooling rate without using a water cooling plate.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 본 발명의 방법을 실시하기 위한 단결정 성장장치의 개략 단면도 및 그 장치의 온도구배를 나타내는 그래프이다.1 is a schematic cross-sectional view of a single crystal growth apparatus for carrying out the method of the present invention and a graph showing the temperature gradient of the apparatus.
제2도 (a) 및 제2도 (b)는 단결정 주물의 제조 방법 및 이 방법에 이용되는 스타터의 구성을 도시한 단면도.2 (a) and 2 (b) are cross-sectional views showing a method of producing a single crystal casting and the configuration of a starter used in the method.
제3도 (a) 내지 제3도 (d)는 단결정 성장용 선택기의 각종 형상을 도시한 사시도.3 (a) to 3 (d) are perspective views showing various shapes of the selector for single crystal growth.
제4도 (a) 내지 제4도 (c)는 주형이 저융점 합금으로 침지되면서 주형 내의 주물이 단결정으로 변화하는 과정을 도시한 일부 절결 단면도.4 (a) to 4 (c) are partially cutaway cross sectional views showing a process in which the casting in the mold changes to a single crystal while the mold is immersed in a low melting point alloy.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930023580A KR960005520B1 (en) | 1993-11-08 | 1993-11-08 | Preparation of single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930023580A KR960005520B1 (en) | 1993-11-08 | 1993-11-08 | Preparation of single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950014378A true KR950014378A (en) | 1995-06-16 |
KR960005520B1 KR960005520B1 (en) | 1996-04-25 |
Family
ID=19367524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930023580A KR960005520B1 (en) | 1993-11-08 | 1993-11-08 | Preparation of single crystal |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960005520B1 (en) |
-
1993
- 1993-11-08 KR KR1019930023580A patent/KR960005520B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR960005520B1 (en) | 1996-04-25 |
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