KR950012946A

KR950012946A - Semiconductor laser diode

Info

Publication number: KR950012946A
Application number: KR1019930021179A
Authority: KR
Inventors: 김택
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1993-10-13
Filing date: 1993-10-13
Publication date: 1995-05-17

Abstract

InGaAs/InGaP 계 반도체 레이저 다이오드가 개시되어 있다. 반도체 기판상에 제1 InGaP클래드층, 활성층, 제2 InGaP 클래드층 및 다중 양자 장벽층이 형성되어 있다. 다중 양자 장벽층은 제1 및 제2 클래드층중 p형 클래드층에 해당하는 층과 활성층 사이에 형성되며 In_1-xGa_xP및 In_1-xGa_xAs가 상호 교대로 초격자 상태로 성장되어 구성된다. 활성층은 제1스페이서층, InAaAs양자 우물층 및 제2스페이서층의 순차적으로 적층된 구조를 가지며, 활성층의 상부 및 하부에 각각 제1 굴절률 천이층 및 제2굴절률 천이층을 더 구비하도록 할 수 있다. 또한 다중 양자 장벽층은 상기 다층구조외에 활성층에 인접한 쪽에 수십 nm의 두께를 갖는 p형 In_0.5Ga_0.5P물질층을 더 포함하도록 하여 전자의 터널링 현상을 방지하도록 할 수 있다. In_1-xGa_xP으로 구성되는 클래드층에서 유효 이종 장벽의 높이를 증가시켜 고온, 고전류에서도 소자가 안정적으로 동작하도록 한다.An InGaAs / InGaP-based semiconductor laser diode is disclosed. The first InGaP cladding layer, the active layer, the second InGaP cladding layer, and the multiple quantum barrier layer are formed on the semiconductor substrate. The multi-quantum barrier layer is formed between the active layer and the layer corresponding to the p-type cladding layer of the first and second cladding layer, and In _1-x Ga _x P and In _1-x Ga _x As alternately superlattice. It is grown and composed. The active layer has a stacked structure of a first spacer layer, an InAaAs quantum well layer, and a second spacer layer, and may further include a first refractive index transition layer and a second refractive index transition layer on the upper and lower portions of the active layer, respectively. . In addition, the multi-quantum barrier layer may further include a p-type In _0.5 Ga _0.5 P material layer having a thickness of several tens nm on the side adjacent to the active layer in addition to the multilayer structure to prevent tunneling of electrons. By increasing the height of the effective heterogeneous barrier in the cladding layer of In _1-x Ga _x P, the device operates stably even at high temperature and high current.

Description

Semiconductor laser diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래기술에 따른 InGaAs/InGaP계의 GRIN SCH(Graded Index Separated Confinenment Heterostructure) QW(Quantum Well)구조의 반도체 레이저 다이오드의 에너지 밴드 다이어그램이다.1 is an energy band diagram of a semiconductor laser diode of a GRIN SCH (Graded Index Separated Confinenment Heterostructure) QW (Quantum Well) structure of InGaAs / InGaP system according to the prior art.

제2도는 본 발명에 따른 반도체 레이저 다이오드에서의 에너지 밴드 다이어그램이다.2 is an energy band diagram in a semiconductor laser diode according to the present invention.

Claims

Semiconductor substrates; A first cladding layer formed on the substrate and composed of InGaP; An active layer formed on the first clad layer; A second clad layer formed on the active layer and composed of InGaP; And an In _1-x Ga _x P layer and an In _11-x Ga _x As layer are formed between the p-type cladding layer and the active layer among the first and second cladding layers and alternately form a superlattice state. A semiconductor laser diode comprising a multiple quantum barrier layer.

The semiconductor laser diode of claim 1, wherein the active layer comprises a first spacer layer, an InGaAs quantum well layer formed on the first spacer layer, and a second spacer layer formed on the quantum well layer.

The semiconductor laser diode of claim 1, further comprising a first refractive index transition layer and a second refractive index transition layer, respectively, above and below the active layer.

The semiconductor laser diode of claim 1, wherein the multiple quantum barrier layer further comprises a p-type In _0.5 Ga _0.5 P material layer adjacent to the active layer.

※ Note: The disclosure is based on the initial application.