KR950012913A - Manufacturing Method Of Semiconductor Laser Diode - Google Patents
Manufacturing Method Of Semiconductor Laser Diode Download PDFInfo
- Publication number
- KR950012913A KR950012913A KR1019930022317A KR930022317A KR950012913A KR 950012913 A KR950012913 A KR 950012913A KR 1019930022317 A KR1019930022317 A KR 1019930022317A KR 930022317 A KR930022317 A KR 930022317A KR 950012913 A KR950012913 A KR 950012913A
- Authority
- KR
- South Korea
- Prior art keywords
- etching
- layer
- growth process
- manufacturing
- etching step
- Prior art date
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- Semiconductor Lasers (AREA)
Abstract
본 발명은 콤팩트 디스크 플레이어나 레이저 디스크 플레이어등의 광 정보 처리용 광원으로 폭넓게 사용되고 있는 780㎚ 파장대의 AlGaAs레이저 다이오드의 제조 방법에 관한 것으로, 특히 LPE(Liquid Phase Epitaxy)법의 되녹임 식각(Melt-back Etching)과 그(제)자리 성장(in situ Regrowth) 기술을 이용하여 계면 특성을 향상시키고, 제조상의 재현성을 향상시켜 소자의 신뢰성을 높이는 PBC(p-type Buried Crescent) 구조의 레이저 다이오드를 제작하기 위한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an AlGaAs laser diode having a wavelength of 780 nm, which is widely used as a light source for processing optical information, such as a compact disc player or a laser disc player. PBC (p-type buried Crescent) structure is fabricated using back etching and in situ regrowth technology to improve interfacial properties and improve reproducibility in manufacturing to increase device reliability. It is to.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도: 제1차 성장 및 채널 에칭 단계와,2: first growth and channel etching step,
제3도: 되녹음 에칭 단계와,3: the re-recording etching step,
제4도: 제2차 성장 단계를 도시한다.4 shows the second growth stage.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930022317A KR950012913A (en) | 1993-10-26 | 1993-10-26 | Manufacturing Method Of Semiconductor Laser Diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930022317A KR950012913A (en) | 1993-10-26 | 1993-10-26 | Manufacturing Method Of Semiconductor Laser Diode |
Publications (1)
Publication Number | Publication Date |
---|---|
KR950012913A true KR950012913A (en) | 1995-05-17 |
Family
ID=66825222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930022317A KR950012913A (en) | 1993-10-26 | 1993-10-26 | Manufacturing Method Of Semiconductor Laser Diode |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR950012913A (en) |
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1993
- 1993-10-26 KR KR1019930022317A patent/KR950012913A/en not_active Application Discontinuation
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Legal Events
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WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |