KR950012913A - Manufacturing Method Of Semiconductor Laser Diode - Google Patents

Manufacturing Method Of Semiconductor Laser Diode Download PDF

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Publication number
KR950012913A
KR950012913A KR1019930022317A KR930022317A KR950012913A KR 950012913 A KR950012913 A KR 950012913A KR 1019930022317 A KR1019930022317 A KR 1019930022317A KR 930022317 A KR930022317 A KR 930022317A KR 950012913 A KR950012913 A KR 950012913A
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KR
South Korea
Prior art keywords
etching
layer
growth process
manufacturing
etching step
Prior art date
Application number
KR1019930022317A
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Korean (ko)
Inventor
김종렬
Original Assignee
김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019930022317A priority Critical patent/KR950012913A/en
Publication of KR950012913A publication Critical patent/KR950012913A/en

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Abstract

본 발명은 콤팩트 디스크 플레이어나 레이저 디스크 플레이어등의 광 정보 처리용 광원으로 폭넓게 사용되고 있는 780㎚ 파장대의 AlGaAs레이저 다이오드의 제조 방법에 관한 것으로, 특히 LPE(Liquid Phase Epitaxy)법의 되녹임 식각(Melt-back Etching)과 그(제)자리 성장(in situ Regrowth) 기술을 이용하여 계면 특성을 향상시키고, 제조상의 재현성을 향상시켜 소자의 신뢰성을 높이는 PBC(p-type Buried Crescent) 구조의 레이저 다이오드를 제작하기 위한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an AlGaAs laser diode having a wavelength of 780 nm, which is widely used as a light source for processing optical information, such as a compact disc player or a laser disc player. PBC (p-type buried Crescent) structure is fabricated using back etching and in situ regrowth technology to improve interfacial properties and improve reproducibility in manufacturing to increase device reliability. It is to.

Description

반도체 레이저 다이오드의 제조 방법Manufacturing Method Of Semiconductor Laser Diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도: 제1차 성장 및 채널 에칭 단계와,2: first growth and channel etching step,

제3도: 되녹음 에칭 단계와,3: the re-recording etching step,

제4도: 제2차 성장 단계를 도시한다.4 shows the second growth stage.

Claims (1)

반도체 기판 상에, 제1의 크래드층, 상기 제1크래드층과 상이한 형의 전류 차단층을 LPE 기법으로 순차적으로 성장시키는 제1의 성장공정; 상기 제1성장 공정에 의해 형성된 전류 차단층의 중앙부를 포토 에칭 공정에 의해 선택적으로 식각하여 통전 채널을 형성하는 제1의 식각단계;와 상기 제1성장 공정에서 형성된 제1크래드층중에서 상기 제1식각 단계에서 형성된 통전채널 하부를 LPE의 되녹임 식각(Melt-back Etching)에 의해 상기 제1크래드층만 선택적으로 식각하는 제2의 식각단계;와 상기 제1식각 단계 및 제2식각 단계에서 형성된 채널에 제자리 제성장(in situ Regrowth)을 행하여 매립된 초승달(Buried Crescent)형의 활성층을 형성하는 제2의 성장공정; 그리고 상기 제2성장 공정에 의해 형성된 활성층 상에 제2의 크래드층과 콘택트층을 형성하는 제3의 성장공정;을 포함하는 것을 특징으로 하는 반도체 레이저 다이오드의 제조방법.A first growth step of sequentially growing a first clad layer and a current blocking layer having a different type from the first clad layer on a semiconductor substrate by an LPE technique; A first etching step of selectively etching a central portion of the current blocking layer formed by the first growth process by a photo etching process to form an energization channel; and the first etching layer among the first cladding layers formed in the first growth process; A second etching step of selectively etching only the first clad layer by the melt-back etching of the LPE on the lower portion of the conduction channel formed in the first etching step; and the first etching step and the second etching step A second growth process of forming a buried crescent-type active layer by performing in situ regrowth on a channel formed in the substrate; And a third growth process of forming a second cladding layer and a contact layer on the active layer formed by the second growth process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930022317A 1993-10-26 1993-10-26 Manufacturing Method Of Semiconductor Laser Diode KR950012913A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930022317A KR950012913A (en) 1993-10-26 1993-10-26 Manufacturing Method Of Semiconductor Laser Diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930022317A KR950012913A (en) 1993-10-26 1993-10-26 Manufacturing Method Of Semiconductor Laser Diode

Publications (1)

Publication Number Publication Date
KR950012913A true KR950012913A (en) 1995-05-17

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930022317A KR950012913A (en) 1993-10-26 1993-10-26 Manufacturing Method Of Semiconductor Laser Diode

Country Status (1)

Country Link
KR (1) KR950012913A (en)

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