KR950012483B1 - Method of preparing a in-su oxide sintering and device for pressure forming filter object - Google Patents

Method of preparing a in-su oxide sintering and device for pressure forming filter object Download PDF

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Publication number
KR950012483B1
KR950012483B1 KR1019930029937A KR930029937A KR950012483B1 KR 950012483 B1 KR950012483 B1 KR 950012483B1 KR 1019930029937 A KR1019930029937 A KR 1019930029937A KR 930029937 A KR930029937 A KR 930029937A KR 950012483 B1 KR950012483 B1 KR 950012483B1
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indium tin
sintered body
manufacturing
oxide sintered
sputtering
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KR1019930029937A
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Korean (ko)
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KR950017011A (en
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윤주식
최기일
권명택
윤종광
이인규
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주식회사엘지금속
박수환
김정덕
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

The manufacturing method for ITO target improves productivity by preventing the mixture of impure materials. The manufacturing method comprises (A) obtaining slurry with ITO powders and water using a crusher; (B) forming the slurry by applying pressure filtration and cold isostatic pressing the formed body; (C) sintering at 1300-1700C.

Description

스퍼터링용 인디움-주석(In-Sn)산화물 소결체의 제조방법 및 가압여과 성형체의 제조장치Manufacturing method of sintered indium tin oxide (In-Sn) oxide and apparatus for manufacturing press-filtered molded body

제1도는 본 발명 제조장치의 단면도.1 is a cross-sectional view of the manufacturing apparatus of the present invention.

제2도는 제1도에서의 분리대를 나타낸 평면도.2 is a plan view of the separator in FIG.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 하지지대 4 : 여과포지지대1: lower limb zone 4: filter cloth supporter

5 : 여과포 6 : 여과통5: filter cloth 6: filter barrel

8 : 가압가스유통공 14 : 구획분리대8: pressurized gas distribution hole 14: compartment separator

본 발명은 스퍼터링용 인디움-주석(In-Sn)산화물(이하"ITO"라 칭함) 소결체 및 그 제조장치에 관한 것으로, 보다 상세하게는 스퍼터링법에 의해 ITO막 형성시 사용되는 ITO타겟(target)의 소결체 제조시 불순물의 혼입우려가 없고, 공정의 단순화로 생산성이 높으며, 특히 상대밀도가 고밀도가 되도록 하는데 적당한 소결체의 제조방법 및 그 제조장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sintered body of indium tin (In-Sn) oxide (hereinafter referred to as "ITO") for sputtering and a manufacturing apparatus thereof, and more particularly to an ITO target used for forming an ITO film by sputtering. The present invention relates to a method for producing a sintered compact and a device for producing the sintered compact, which are suitable for making impurities free of impurities, having a high productivity due to the simplification of the process, and particularly having a high relative density.

ITO막은 랩탑컴퓨터, 사무자동화용기기, 벽걸이 TV등과 같은 LCD채용 제품의 투명전극, 태양전지의 정전기 도체, 액정표시소자 제조시 투명전극등에 광범위하게 이용되고 있다.ITO membranes are widely used in transparent electrodes of LCD applications such as laptop computers, office automation equipment, wall-mounted TVs, electrostatic conductors of solar cells, and transparent electrodes in the manufacture of liquid crystal display devices.

ITO막은 ITO타겟(target)을 이용한 스퍼터링(sputtering)법에 의해 제조되고 있다. 이러한 ITO타겟을 형성하기 위한 소결체는 일반적으로 소결체의 밀도가 높을수록 소결체의 기공에서 발생하는 기체의 양이 적어서 스퍼터링 장비내의 압력변화가 적으므로 제품의 불량이 낮아지고 박막형성속도가 빨라진다. 따라서, 생산성 향상을 위해서는 고밀도의 소결체가 요구되어지고 있다.The ITO film is manufactured by the sputtering method using an ITO target. In general, the higher the density of the sintered body, the smaller the amount of gas generated in the pores of the sintered body, so that the pressure change in the sputtering equipment is small, so that the defect of the product is lowered and the film formation speed is increased. Therefore, in order to improve productivity, a high density sintered compact is required.

ITO소결체를 제조하는 종래의 방법은, 1) In-Sn산화물 공침분말을 냉간정수압프레스(CIP)를 사용하여 2ton/cm2압력으로 소결체를 제조하는 방법(일본특개평 2-6332).Conventional methods for producing ITO sintered bodies include: 1) a method of producing a sintered compact at 2 ton / cm 2 pressure using an In-Sn oxide co-precipitated powder by cold hydrostatic pressure press (CIP) (Japanese Patent Laid-Open No. 2-6332).

2) In-Sn산화물 분말을 핫프레스(100∼162℃, 500∼2,500㎏/㎠압력)하여 소결체를 제조하는 방법(일본특개평 2-141459).2) A method of producing a sintered compact by hot pressing (100 to 162 캜, 500 to 2,500 kg / cm 2 pressure) of In-Sn oxide powder (Japanese Patent Laid-Open No. 2-141459).

3) In-Sn산화물을 2단계에 걸친 CIP를 사용하여 소결체를 제조하는 방법(일본특개평 3-153868)등이 제안되고 있다.3) A method of producing a sintered body using In-Sn oxide using CIP having two steps (Japanese Patent Laid-Open No. 3-153868) and the like have been proposed.

그러나 상기한 종래의 방법들은 일반적으로 소결 상대밀도가 80∼85%로서 90%이 넘는 ITO산화물 제조가 어렵고, 제조과정중 불순물의 혼입우려가 있으며 또한 제조시 생산성에 문제가 있다.However, the above-mentioned conventional methods generally have a relative sintered density of 80 to 85%, which makes it difficult to manufacture more than 90% of ITO oxide, and there is a possibility of incorporation of impurities during the manufacturing process and also a problem in productivity during manufacturing.

본 발명은 상기한 종래의 문제점을 해결하기 위해 안출한 것으로, 종래와는 달리 ITO분말에 분산제와 증류수를 혼합한 슬러리(slurry)를 만들어 이를 가압여과하고 CIP성형, 소결함으로서 상대밀도가 높고(90%이상), 불순물 혼입억제를 비롯한 생산성이 증된 ITO소결체를 얻기 위한 제조방법과 그 장치를 제공하는데 그 목적이 있다.The present invention has been made to solve the above-mentioned conventional problems, unlike the prior art by making a slurry (slurry) mixed with a dispersant and distilled water in the ITO powder, pressure filtration and CIP molding, sintering and high relative density (90 % Or more), and to provide a manufacturing method and apparatus for obtaining ITO sintered body having increased productivity, including impurity incorporation.

이하 본 발명을 설명한다.Hereinafter, the present invention will be described.

본 발명은 중량%로서 인디움-주석(In-Sn)산화물 분말을 45∼70% 함수분이 되게하여 분쇄혼합기에 넣어서 분산액(slurry)을 얻는 공정과, 상기 분산액에 압력을 가하여 여과시켜 성형하는 공정과, 상기한 성형체를 냉간정수압프레싱(CIP : Cold Isostatic Pressing)하고 1300∼1700℃에서 소결하여 스퍼터링용 ITO 소결체를 얻는 공정으로 이루어진다.In the present invention, a process for obtaining a dispersion by adding the indium tin oxide powder (In-Sn) oxide powder to 45 to 70% water content in a pulverized mixer in a weight%, and applying the pressure to the dispersion to form a filtration. And a cold hydrostatic pressing (CIP: Cold Isostatic Pressing), followed by sintering at 1300 to 1700 ° C. to obtain an ITO sintered body for sputtering.

첨부도면 제1도는 본 발명의 ITO소결체를 얻기 위한 장치의 단면으로서, 이를 구체적으로 설명한다.1 is a cross-sectional view of an apparatus for obtaining the ITO sintered body of the present invention, which will be described in detail.

본 발명의 장치는 흠부(2) 및 체결공(3)을 갖는 하지지대(1) 상면에 통공(4a)이 형성된 여과포지지대(4)를 설치하여, 여과포지지대(4)상면으로 여과포(5)를 올려놓는다.The apparatus of the present invention is provided with a filter support (4) formed with a through hole (4a) on the upper surface of the base (1) having a flaw (2) and the fastening hole (3), the filter cloth (5) on the upper surface of the filter support (4) Put it on.

그리고 이 여과포(5)상부에는 사각통상(또는 원통상)으로 된 여과통(6)을 오링(O-Ring)(7)으로 씰링되게 하지지대(1)에 끼워 설치하고, 여과통(6)상면에는 체결공(3') 및 가스유통공(8)을 갖는 덮개(9)를설치하고, 덮개(9)의 가스유통공(8)상면에는 가스유입구(10)를 갖는 가스켓트(11)을 설치한다.And the upper part of this filter cloth 5 is provided with the square cylinder (or cylindrical) filter cylinder 6 inserted in the support base 1 so that it may be sealed by O-ring 7, and it may be installed in the upper surface of the filter cylinder 6 A cover 9 having a fastening hole 3 'and a gas distribution hole 8 is provided, and a gasket 11 having a gas inlet 10 is installed on the upper surface of the gas distribution hole 8 of the cover 9. do.

그리고 체결볼트(12)를 상기한 덮개의 체결공(3') 및 하지지대(1)의 체결공(3)에 끼워 너트(13)로 체결한다.Then, the fastening bolt 12 is fastened to the fastening hole 3 'of the cover and the fastening hole 3 of the base support 1 to be fastened with the nut 13.

또한 상기한 장치는 제2도와 같은 구획분리대(14)를 여과포(5)상부에 위치되게 여과통(6)내에 설치한다.The above apparatus also installs a partition separator 14 as shown in FIG. 2 in the filter barrel 6 so as to be located above the filter cloth 5.

이는 소결체 제조시 한꺼번에 여러개의 소결체를 생산하기 위함이다.This is to produce a plurality of sintered body at the same time when manufacturing the sintered body.

이와 같은 장치를 이용한 본 발명은, 우선 In-Sn산화물, 분산제, 증류수를 분쇄혼합기에서 분산액을 만들어, 이를 상기한 장치의 구획분리대가 내장된 여과통(6)내에 넣고 가스유입구(10)를 통해 압축 공기나 아르곤가스를 취입하면 분산액(slurry)은 가스압력에 밀려 하부로 내려가 여과포(5)에 의거 여과되면서 충진밀도가 높은 구획분리대에 따른 여러개의 성형체가 되고 여과액은 여과액유출구(15)로 배출된다.In the present invention using such a device, In-Sn oxide, a dispersant, and distilled water are first made into a dispersion in a pulverized mixer, which is then put into a filter vessel (6) in which the partition separator of the apparatus is incorporated and compressed through a gas inlet (10). When air or argon gas is blown in, the dispersion is pushed down by the gas pressure to be lowered and filtered by the filter cloth 5 to form a plurality of shaped bodies according to the high-density compartment separator, and the filtrate to the filtrate outlet 15. Discharged.

이때 여과시의 가압방법은 초기에는 낮은 압력(약 0.1MPa)으로 시작하여 여과된 성형체의 두께가 증가함에 따라 사용압력을 점차적으로 증가(200MPa)킨다.At this time, the pressurization method during filtration initially starts with a low pressure (about 0.1 MPa) and gradually increases the working pressure (200 MPa) as the thickness of the filtered molded body increases.

이렇게 압력을 증가시키는 이유는 성형체의 두께가 증가함에 따라 여과시키는 유효 압력이 낮아지므로 이를 보상하여 전체적으로 균일한 밀도를 가지는 성형체를 얻기 위해서이다.The reason why the pressure is increased is to compensate for this as the effective pressure for filtering decreases as the thickness of the molded article increases, thereby obtaining a molded article having a uniform density as a whole.

초기에 가압되는0.1MPa 압력의 경우 그 압력 이하에서는 가압여과의 효과가 거의 없으며, 최종에 가압되는 200MPa 압력의 경우 그 압력 이상에서는 여과속도의 증가 및 균일한 밀도의 성형체 제조에는 거의 영향을 미치지 않기 때문에 초기에는 0.1MPa로 가압 시작하여 최종적으로 200MPa로 가압함이 적당하다.Initially pressurized 0.1 MPa pressure has little effect of press filtration below the pressure, and finally pressurized 200 MPa pressure has little effect on the increase of the filtration rate and the production of uniform bodies at the above pressure. For this reason, it is appropriate to start pressurization at 0.1 MPa initially and finally pressurize to 200 MPa.

이렇게 성형된 성형체는 체결볼트(12) 및 여과통(6)를 분해하여 인출한다.The molded article thus formed is taken out by disassembling the fastening bolt 12 and the filter barrel 6.

이렇게 성형된 성형체는 냉간정수압 프레싱하고 이어서 소결함으로서 90% 이상의 상대밀도를 갖는 ITO 소결체를 얻게 된다.The molded article thus formed is cold hydrostatic pressed and subsequently sintered to obtain an ITO sintered compact having a relative density of 90% or more.

이와 같은 장치를 이용한 제조에서 ITO분말 산화물의 사용량이 지나치게 많으면 분쇄 혼합기를 이용하여서 분산시 일부는 분산되지 않고 침전이 일어날 수 있다.If the amount of the ITO powder oxide used in the production using such a device is too large, some may not be dispersed during the dispersion using a pulverized mixer and precipitation may occur.

또한 ITO분말 입경이 0.05㎛ 이하인 경우는 여과포가 쉽게 막혀 버리기 때문에 여과 속도가 과도하게 길어지게 되며, ITO분말 입경이 10㎛ 이상인 경우는 입자크기가 큰 분말들이 먼저 침전여과되고 미세한 분말들이 남아서 나중에 여과된 부분의 수분함량이 초기에 여과된 부분보다 높게되고, 이에따라 건조시 휘는 현상이 일어나므로 편평한 제품을 생산하기 곤란하다.In addition, if the particle size of ITO powder is 0.05 μm or less, the filter cloth is easily clogged, and thus the filtration rate becomes excessively long. If the particle size of the ITO powder is 10 μm or more, the particles having a large particle size are precipitated first and fine powders are left. The water content of the broken portion becomes higher than that of the initially filtered portion, and accordingly, a warping phenomenon occurs during drying, which makes it difficult to produce a flat product.

뿐만아니라 큰입자분말은 반응성 및 소결성이 좋지 않아 소결체의 밀도가 낮아지므로 본 발명에서는 ITO 분말입경을 0.05∼10㎛범위로 함이 바람직하다.In addition, since the large particle powder is poor in reactivity and sinterability, so that the density of the sintered compact is low, in the present invention, the ITO powder particle size is preferably in the range of 0.05 to 10 µm.

분산제는 미국 R.T.Vanderbilt사에서 생산, 판매되는 분산체로서(일명 : 다반 821C) Ammoninated Polyarcrylic Acid (암모니아로 치환된 PAA)이다.The dispersant is an ammoninated polyarcrylic acid (PAA substituted with ammonia), which is produced and sold by R.T. Vanderbilt, USA (aka Durban 821C).

사용되는 조성은 분자량이 5,000∼7,000정도이고 비중은 1.12정도이다.The composition used has a molecular weight of about 5,000 to 7,000 and specific gravity about 1.12.

화학식으로 표시하면 아래와 같다.When expressed as a chemical formula:

이와 같은 분산제를 사용함에 있어 그 사용량이 지나치면 분산에 이용되지 않는 여분의 분산제는 여과시 필요한 공극을 줄여 여과시간이 길어지게 되고, 성형후 소결시 가스 발생량이 많게 되어 불량이 발생하기 쉽다.In using such a dispersant, when the amount of the dispersant is excessive, the extra dispersant which is not used for dispersing reduces the pores necessary for filtration and thus lengthens the filtration time, and the amount of gas generated during sintering after molding tends to cause defects.

다음은 실시예에 따라 설명한다.The following is described according to the embodiment.

하기한 실시예에서 보여주고 있는 조성비는 제조에 따른 하나의 예를 제시하는데 불과함으로 본 발명은 이에 국한되지 않는다.The composition ratio shown in the following examples is merely to provide one example according to the manufacture, the present invention is not limited thereto.

[실시예 1 ]Example 1

0.05∼10㎛의 미세한 인디움-주석산화물 분말 30∼50중량부와 분산제 1-5중량부에 함수분이 45∼70%가 되게 증류수가 혼합된 분산액(slurry)을 20시간 습식밀링한 후 제1도와 같은 장치에 넣어서 압축공기 또는 아르곤가스를 사용하여 초기에는 0.1MPa 압력으로 시작하여 최종에는 200MPa 압력이 되도록 하여 가압여과 하였다.30 to 50 parts by weight of the fine indium tin oxide powder of 0.05 to 10 μm and 1 to 5 parts by weight of the dispersant were wet milled for 20 hours with a slurry containing distilled water mixed so that the water content was 45 to 70%. Pressurized filtration was carried out by using compressed air or argon gas, starting with 0.1 MPa pressure and finally 200 MPa pressure in a device such as a tile.

이렇게 제조된 성형체를 다시 형성밀도를 높이기 위해 냉간정수압 프레싱하고, 이어서 1650℃에서 소결하였던바, 상대밀도 93%의 인디움- 주석산화물 소결체를 얻었다.The molded article thus produced was cold-pressed and pressurized to increase the formation density again, and then sintered at 1650 ° C. to obtain an indium tin oxide sintered body having a relative density of 93%.

[실시예 2 ]Example 2

0.05∼5㎛의 미세한 인디움-주석 산화물과 분산제, 증류수가 혼합된 분산액을 실시예 1과 같은 방법으로 제조하였던 바, 상대밀도 95%의 인디움-주석산화물 소결체 얻었다.A dispersion liquid containing 0.05 to 5 µm fine indium tin oxide, a dispersant, and distilled water was prepared in the same manner as in Example 1 to obtain an indium tin oxide sintered body having a relative density of 95%.

이상에서와 같이 본 발명은 인디움-주석 산화물을 비롯한 분산제, 증류수를 혼합한 분산액을 본 발명 장치를 이용한 가압여과 방식으로 성형체를 얻음으로서 제조시 불순물의 혼입우려가 없고, 또한 구획분리대를 갖는 간단한 장치에 따른 제조로 생산성 향상을 기할 수 있으며 특히 이와 같은 제조공정에 따라 최종적으로 상대밀도가 90%이상인 스퍼터링용 타겟소결체를 얻게된다.As described above, the present invention obtains a molded body by dispersing a dispersant including indium tin oxide and distilled water by a pressure filtration method using the apparatus of the present invention, so that there is no fear of incorporation of impurities during preparation, and also has a simple partition separator. Productivity can be improved by manufacturing according to the device, and in particular, the final sintering target sintered body having a relative density of 90% or more can be obtained according to this manufacturing process.

Claims (7)

인디움-주석(In-Sn)산화물 분말에 분산제와 물을 가해 분쇄혼합한 분산액(Slurrg)을 이용하여 소결처리하는 것에 있어서, 상기한 분산액을 가압여과(Pressure Filtration)시켜 성형하고, 상기한 성형체를 냉간정수압프레싱(CIP)하고 이어서 소결처리하여서 됨을 특징으로 하는 스퍼터링용 인디움- 주석(In-Sn)산화물 소결체의 제조방법.In the sintering process using a dispersion obtained by adding a dispersant and water to an indium tin oxide powder and pulverizing and mixing the mixture, the dispersion is molded by pressure filtration and the molded article described above. Cold hydrostatic pressing (CIP) and then sintering the process for producing an indium tin (In-Sn) oxide sintered body for sputtering. 제1항에 있어서, 인디움-주석산화물 분말이 0.05∼10㎛범위임을 특징으로 하는 스퍼터링용 인디움-주석(In-Sn) 산화물 소결체의 제조방법.The method of manufacturing an indium tin (In-Sn) oxide sintered body for sputtering according to claim 1, wherein the indium tin oxide powder is in the range of 0.05 to 10 µm. 제1항에 있어서, 가압수단이 압축공기 또는 아르곤 가스를 사용함을 특징으로 하는 스퍼터링용 인디움-주석(In-Sn)산화물 소결체의 제조방법.The method of manufacturing an indium tin (In-Sn) oxide sintered body for sputtering according to claim 1, wherein the pressurizing means uses compressed air or argon gas. 제1항에 있어서, 가압력이 초기에는 0.1MPa의 압력으로 시작하여 최종에는 200MPa 기압의 압력이 되도록 하여 가압여과함을 특징으로 하는 스퍼터링용 인디움-주석(In-Sn)산화물 소결체의 제조방법.The method of manufacturing an indium tin (In-Sn) oxide sintered body according to claim 1, wherein the pressing force is initially filtered at a pressure of 0.1 MPa and finally at a pressure of 200 MPa. 제1항에 있어서, 분산제가의 화학식을 갖는 Ammoniated Polyarcrylic Acid (암모니아로 치환된 PAA)임을 특징으로 하는 스퍼터링용 인디움-주석(In-Sn)산화물 소결체의 제조방법.The method of claim 1 wherein the dispersant A method for producing a sputtering indium tin (In-Sn) oxide sintered body characterized in that the Ammoniated Polyarcrylic Acid (PAA substituted with ammonia) having the formula of. 하지지대(1)의 상면에 순차적으로 여과포지지대(4)과 여과포(5)를 설치하고 상기 여과포(5)의 상부에는 여과통(6)을 하지지대(1)와 씰링되게 설치하며 상기 여과통(6)의 상면에는 가압가스 유통공(8)을 갖는 덮개(9)를 체결부재에 의해 하지지대(1)와 고정되게 함을 특징으로 하는 스퍼터링용 인디움-주석산화물 소결체 제조를 위한 가압여과 성형체의 제조장치.The filter cloth support 4 and the filter cloth 5 are sequentially installed on the upper surface of the base paper 1, and the filter tank 6 is installed on the upper part of the filter cloth 5 to be sealed with the base paper 1, and the filter tank 6 On the upper surface of the), the cover 9 having a pressurized gas distribution hole 8 is fixed to the base plate 1 by a fastening member. Manufacturing equipment. 제6항에 있어서, 여과통(6)내의 하부에 설치되어 여과포(5)의 상부에 구획분리대(14)를 설치함을 특징으로 하는 스퍼터링용 인디움-주석산화물 소결체 제조를 위한 가압여과 성형체의 제조장치.The method of claim 6, wherein the press-molded body for the production of sputtering indium-tin oxide sintered body, characterized in that installed in the lower part of the filter barrel 6, the partition separator 14 is installed on the upper part of the filter cloth (5). Device.
KR1019930029937A 1993-12-27 1993-12-27 Method of preparing a in-su oxide sintering and device for pressure forming filter object KR950012483B1 (en)

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