KR950009950A - Semiconductor manufacturing apparatus and semiconductor manufacturing method - Google Patents

Semiconductor manufacturing apparatus and semiconductor manufacturing method Download PDF

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KR950009950A
KR950009950A KR1019940016242A KR19940016242A KR950009950A KR 950009950 A KR950009950 A KR 950009950A KR 1019940016242 A KR1019940016242 A KR 1019940016242A KR 19940016242 A KR19940016242 A KR 19940016242A KR 950009950 A KR950009950 A KR 950009950A
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semiconductor manufacturing
chamber
light
manufacturing apparatus
reflected
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KR1019940016242A
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KR0162934B1 (en
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히로끼 가와다
가즈에 다까하시
마나부 에다무라
사부로오 가나이
나오유끼 다무라
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가나이 쯔도무
가부시기가이샤 히다찌 세이사꾸쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/0027—Ion-implantation, ion-irradiation or ion-injection
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation

Abstract

반도체 제조장치의 처리챔버내에 부착 또는 퇴적하는 반응생성물의 양 또는 과학적 조성을 챔버를 대기 개방하는 일 없이 측정하는 장치 및 방법에 있어서, 처리챔버내에 광파이버 등의 광도입수단에 의하여 적외광 등의 광을 광도입부로부터 처리챔버내로 도입하고, 처리챔버내의 특정개소에서 반사한 광, 또는 장소를 특정하지 않으나 처리챔버내에서 반사한 광을 처리챔버밖에 설치한 수광부를 수광하고, 분광 또는 광량측정을 실행함으로써 반응생성물에 의한 용기의 오염이나 프로세서의 상태를 판정한다.An apparatus and method for measuring the amount or scientific composition of a reaction product attached or deposited in a processing chamber of a semiconductor manufacturing apparatus without opening the chamber to the atmosphere, wherein light such as infrared light is introduced into the processing chamber by a light introduction means such as an optical fiber. Introduced into the processing chamber from the light introduction section, and receives the light receiving section provided outside the processing chamber for the light reflected from a specific location in the processing chamber or the location that is reflected within the processing chamber, and performs spectroscopic or photometric measurement. It is determined whether the container is contaminated by the reaction product or the state of the processor.

Description

반도체 제조장치 및 반도체 제조방법Semiconductor manufacturing apparatus and semiconductor manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 실시예를 적용한 반도체 장치의 하나인 마이크로파 에칭기의 일부단면 사시도,1 is a partial cross-sectional perspective view of a microwave etching machine which is one of semiconductor devices to which an embodiment of the present invention is applied;

제2도는 난반사 광량과, 퇴적량의 관계를 설명하는 도,2 is a diagram illustrating a relationship between diffuse reflection light quantity and deposition amount;

제3a, b도는 본 발명의 일실시예의 장치에 있어서의 석영봉의 손상을 방지하기 위한 기구의 설명도로서, 제3a도는 석영봉을 챔버밖으로 수납한 경우를 나타낸 도, 제3b도는 챔버내로 석영봉을 돌출한 경우를 나타낸 도.3a and b are explanatory views of a mechanism for preventing damage to the quartz rod in the apparatus of one embodiment of the present invention. FIG. 3a is a diagram showing a case where the quartz rod is stored out of the chamber, and FIG. 3b is a quartz rod into the chamber. Figure showing the case of protruding.

Claims (26)

처리가스로 채워진 반도체제조방치는 챔버와, 이 챔버에 설치되어 광이 투과하는 부재와, 이 광투광성부재를 거쳐 상기 챔버의 내부에 광을 도입하고, 챔버내부에 광을 조사하는 조사수단과, 그 반사광에 관하여 분광 및 광량측정의 적어도 한쪽을 행하는 측정수단을 가지고, 챔버내의 상황을 대기 개방하지 않고 측정 가능하게 하는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing apparatus filled with the processing gas includes a chamber, a member installed in the chamber, light transmitting means, irradiation means for introducing light into the chamber through the light transmitting member, and irradiating light into the chamber; A semiconductor manufacturing apparatus and a semiconductor manufacturing method, comprising measuring means for performing at least one of spectroscopic and light quantity measurement with respect to the reflected light, so that the situation in the chamber can be measured without opening to the atmosphere. 처리가스로 채워진 반도체 제조장치는 챔버와 이 챔버에 설치되어 챔버내에 광을 도입하는 광원측의 투광성 부재와, 상기 챔버내면 그 자체의 반사광을 도출하는 도출측의 투과성부재를 구비하고, 이 도출측의 투광성 부재를 거친 광에 관하여 측정 및 분광의 적어도 어느 것인가를 행하는 측정수단을 가지는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.A semiconductor manufacturing apparatus filled with a processing gas includes a chamber, a transmissive member on the light source side that introduces light into the chamber, and a transmissive member on the derivation side for deriving the reflected light of the chamber inner surface itself. A semiconductor manufacturing apparatus and a semiconductor manufacturing method characterized by having a measuring means which performs at least any of measurement and spectroscopy with respect to the light which passed through the translucent member of this invention. 처리가스로 채워진 반도체 제조방치는 챔버와, 이 챔버에 설치되어 광이 투과하는 부재와, 그 투광성부재의 내부에서 반사한 다중 반사광에 관하여 분광 및 광량측정의 적어도 한쪽을 실행하는 측정수단을 가지고, 그 측정수단은 상기 부재의 표면에 부착한 물질의 양, 조성 및 성질의 적어도 어느 것인가를 측정하고, 챔버내의 상황을 대기 개방하지 않고 측정 가능하게 하는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor fabrication method filled with the processing gas has a chamber, a member provided in the chamber, and a measuring means for performing at least one of spectroscopic and photometric measurement with respect to multiple reflected light reflected inside the light transmitting member, The measuring means measures at least one of the amount, composition and properties of the substance adhering to the surface of the member, and makes it possible to measure the situation in the chamber without opening the atmosphere to the semiconductor manufacturing apparatus and semiconductor manufacturing method. 처리가스로 채워진 반도체 제조방치는 챔버와, 그 채버 에 위치하고, 어 광이 투과하는 1개 또는 복수의 투광성부재와 외부로부터의 광을 이 투광성부재에 광학적으로 접속한 광파이버를 거쳐 상기 챔버내로 유도하는 광도입수단과, 상기 투광성부재로 내부반사한 다중반사광에 관하여 분광 및 광량측정의 적어도 어느 것인가를 실행하는 측정수단을 가지는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing method filled with the processing gas is located in the chamber, the chamber, and one or more light transmitting members through which the light passes, and light from the outside is guided into the chamber through an optical fiber optically connected to the light transmitting member. And a measuring means for performing at least one of spectroscopic and light quantity measurements with respect to the multi-reflected light internally reflected by the light transmitting member. 제1항에 있어서, 상기 투광성부재의 이동기구를 구비하는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.A semiconductor manufacturing apparatus and a semiconductor manufacturing method according to claim 1, further comprising a moving mechanism of the light transmitting member. 제1항에 있어서, 상기 투광성 부재를 덮어 감출 수 있는 셔터를 구비하는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing apparatus and a semiconductor manufacturing method of Claim 1 provided with the shutter which can cover and hide the said translucent member. 제1항에 있어서, 상기 챔버를 진공 배기하는 진공배기수단을 가지는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing apparatus and semiconductor manufacturing method according to claim 1, further comprising a vacuum exhaust means for evacuating the chamber. 제1항에 있어서, 상기 챔버에 처리가스를 공급하는 처리가스 공급수단을 가지는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing apparatus and semiconductor manufacturing method according to claim 1, further comprising a processing gas supply means for supplying a processing gas to the chamber. 반도체 제조방법은 챔버에 설치된 투광성부재를 거쳐 반도체 제조장치의 상기 챔버내부에 광을 도입하는 스텝과, 이 챔버내부에 광을 조사하는 스텝과, 그 반사광에 관하여 분광 및 광량측정의 적어도 어느 것인가를 실행함으로써 챔버내의 상황을 대기 개방하지 않고 측정하는 스텝을 가지는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing method includes the steps of introducing light into the chamber of the semiconductor manufacturing apparatus through a light transmitting member provided in the chamber, irradiating light into the chamber, and at least one of spectroscopic and photometric measurement with respect to the reflected light. And a step of measuring the situation in the chamber without opening the atmosphere by performing the step. 반도체 제조방법은 반도체 제조장치의 챔버내에 일단이 면하도록 배치한 투광성부재의 내부에서 광을 반사시키는 스텝과, 그 다중반사광에 관하여 분광 및 광량측정의 적어도 한쪽을 실행하여 그 부재의 표면에 부착한 물질의 양, 조성 및 성질의 적어도 어느 것인가를 측정하는 스텝을 가지고, 챔버내의 상황을 대기 개방하지 않고 측정하는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing method includes a step of reflecting light inside a translucent member disposed to face one end in a chamber of a semiconductor manufacturing apparatus, and performing at least one of spectroscopic and photometric measurements on the multi-reflected light and attaching it to the surface of the member. A semiconductor manufacturing apparatus and a semiconductor manufacturing method comprising the step of measuring at least one of the quantity, composition, and property of a substance, and measuring the situation in a chamber without opening the atmosphere. 반도체 제조방법은 반도체 제조장치의 챔버내에 일단이 면하도록 배치한 투광성부재에 광학적으로 접속한 광파이버를 거쳐 외부광을 상기 챔버내로 유도하는 스텝과, 상기 투광성부재로 내부 반사한 다중반사광을 광파이버에 의하여 끄집어내는 스텝과, 그 반사광에 관하여 분량 및 광량 측정의 적어도 한쪽을 실행하는 스텝을 가지고, 챔버내의 상황을 프로세스 진행중에 모니터하는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing method includes a step of guiding external light into the chamber through an optical fiber optically connected to a translucent member disposed to face one end in a chamber of the semiconductor manufacturing apparatus, and multireflected light internally reflected by the translucent member by the optical fiber. A semiconductor manufacturing apparatus and a semiconductor manufacturing method comprising the steps of taking out and performing the at least one of quantity and light quantity measurement with respect to the reflected light, and monitors the situation in a chamber during process progress. 제10항에 있어서, 상기 챔버내의 상황은 챔버내 표면에 퇴적한 물질의 상태, 또는 화학 반응, 프로세스 상태인 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing apparatus and semiconductor manufacturing method according to claim 10, wherein the situation in the chamber is a state of a substance deposited on the surface of the chamber, or a chemical reaction or a process state. 제10항에 있어서, 상기 투광성부재는 상기 챔버에 설치된 창으로서 그 창의 정면으로부터 마이크로파를 도입하면 동시에 창의 측면으로부터 상기 창의 내부로 광을 입사시키고, 상기 창의 내부에서 반사한 광을 상기 창의 측면으로부터 끄집어내어 광량의 측정 및 분광의 적어도 한쪽을 실행하고, 프로세스 진행중에 상기 창의 챔버내측에 퇴적한 물질의 양 및 성질의 적어도 어느 것인가를 측정하는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.11. The light transmitting member according to claim 10, wherein the light transmitting member is a window installed in the chamber, and when the microwave is introduced from the front of the window, light is incident from the side of the window to the inside of the window, and the light reflected from the inside of the window is drawn out from the side of the window. A semiconductor manufacturing apparatus and a semiconductor manufacturing method, characterized in that at least one of measuring the amount of light and spectroscopy is performed, and at least one of the quantity and property of the substance deposited in the chamber inside the window during the process. 제10항에 있어서, 상기 챔버내부의 상태의 측정을 반응생성물의 웨이퍼에의 퇴적, 에칭, 노광의 각 프로세스 중 적어도 하나의 프로세스 전 또는 후에 행하는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing apparatus and semiconductor manufacturing method according to claim 10, wherein the measurement of the state inside the chamber is performed before or after at least one of the processes of depositing, etching, and exposing the reaction product to the wafer. 제10항에 있어서, 상기 챔버내 및 부재의 내부에서 반사한 광의 측정결과에 의거하여 챔버내의 부착물을 청소하도록 표시한 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing apparatus and semiconductor manufacturing method according to claim 10, wherein the deposits in the chamber are cleaned to be cleaned based on the measurement result of the light reflected in the chamber and the inside of the member. 제10항에 있어서, 상기 챔버내나 부재의 내부에서 반사한 광의 측정결과에 의거하여 부착물을 제거하는 처리를 자동적으로 개시, 정지 및 제어의 적어도 어느 것인가를 실행하는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing apparatus and semiconductor according to claim 10, wherein at least any one of starting, stopping, and controlling a process for removing deposits is automatically executed based on a measurement result of light reflected in the chamber or inside the member. Manufacturing method. 제10항에 있어서, 상기 챔버내에 부재의 내부에서 반사한 광의 측정결과에 의거하여 측정결과 및 프로세스 상태의 적어도 어느 것인가를 표시하는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing apparatus and semiconductor manufacturing method according to claim 10, wherein at least one of the measurement result and the process state is displayed based on the measurement result of the light reflected from the inside of the member in the chamber. 제10항에 있어서, 상기 챔버내에 부재의 내부에서 반사한 광의 측정결과에 의거하여 프로세스 상태를 제어하는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing apparatus and semiconductor manufacturing method according to claim 10, wherein the process state is controlled based on a measurement result of the light reflected from the inside of the member in the chamber. 제10항에 있어서, 도입하는 광 및 도출하는 광이 적외광인 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.A semiconductor manufacturing apparatus and a semiconductor manufacturing method according to claim 10, wherein the light to be introduced and the light to be extracted are infrared light. 제10항에 있어서, 광을 분석하는 수단은 푸리에 변환분광법을 이용한 분석수단인 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.11. The semiconductor manufacturing apparatus and semiconductor manufacturing method according to claim 10, wherein the means for analyzing light is analysis means using Fourier transform spectroscopy. 반도체 제조장치는 적어도 프로세서를 행하는 챔버와, 이 챔버에 처리가스를 도입하는 가스도입수단과, 자장을 발생시키기 위한 자석과, 전자파를 발생시키기 위한 전자파원을 구비하여 이루어지는 드라이에칭장치로서 상기 챔버에 부설한 광이 투과하는 부재와, 상기 투광성부재를 거쳐 상기 챔버의 내부에 광을 도입하는 광도입 수단과, 챔버내부에 조사한 광의 반사광에 관하여 분광 및 광량측정의 적어도 어느 것인가를 실행하는 측정수단을 가지고, 챔버내의 상태량을 대기 개방하지 않고 측정가능하게 하는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing apparatus is a dry etching apparatus comprising at least a chamber for performing a processor, gas introduction means for introducing a processing gas into the chamber, a magnet for generating a magnetic field, and an electromagnetic wave source for generating electromagnetic waves. A means for introducing at least one of spectroscopic and photometric measurements with respect to a member through which the attached light is transmitted, light introduction means for introducing light into the chamber through the light transmitting member, and reflected light of light irradiated into the chamber; And enabling a state amount in the chamber to be measured without opening to the atmosphere. 반도체 제조장치는 적어도 프로세스를 행하는 챔버와, 이 챔버에 처리가스를 도입하는 가스도입수단과, 자장을 발생시키기 위한 자석과, 전자파를 발생시키기 위한 전자파원을 구비하여 이루어지는 드라이에칭장치로서 상기 챔버내에 광을 도입하는 광원측의 투광성 부재와, 상기 챔버내면 그 자체의 반사광을 도출하는 도출측 투광부재와, 상기 투광성부재를 거친 광에 관하여 측정 및 분광의 적어도 어느 것인가를 실행하는 측정수단을 가지는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing apparatus is a dry etching apparatus comprising at least a chamber for performing a process, gas introduction means for introducing a processing gas into the chamber, a magnet for generating a magnetic field, and an electromagnetic wave source for generating electromagnetic waves. A light transmitting member on the light source side for introducing light, a light emitting side light emitting member for extracting reflected light of the chamber inner surface itself, and measuring means for performing at least one of measurement and spectroscopy with respect to light passing through the light transmitting member. A semiconductor manufacturing apparatus and a semiconductor manufacturing method characterized by the above-mentioned. 반도체 제조장치는 적어도 프로세스를 행하는 챔버와, 이 챔버에 처리가스를 도입하는 가스도입수단과, 자장을 발생시키기 위한 자석과, 전자파를 발생시키기 위한 전자파원을 구비하여 이루어지는 드라이에칭장치로서 상기 챔버에 부설한 광이 투과하는 부재와, 그 투광성부재의 내부에서 반사한 다중반사광에 관하여 분광 및 광량측정의 적어도 한쪽을 실행하는 측정수단을 가지고, 그 측정수단은 상기 투광성부재의 표면에 부착한 물질의 양, 조성 및 성질의 적어도 어느 것인가를 측정하고, 챔버내 상태량을 대기 개방하지 않고 측정하는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing apparatus is a dry etching apparatus comprising at least a chamber for performing a process, gas introduction means for introducing a processing gas into the chamber, a magnet for generating a magnetic field, and an electromagnetic wave source for generating electromagnetic waves. And a measuring means for performing at least one of spectroscopic and photometric measurement with respect to the multi-reflected light reflected from the inside of the translucent member, and the measuring means for measuring the material attached to the surface of the translucent member. A semiconductor manufacturing apparatus and a semiconductor manufacturing method, characterized in that at least one of the amount, composition, and properties is measured, and the amount of state in the chamber is measured without opening the atmosphere. 반도체 제조장치는 적어도 프로세스를 행하는 챔버와 처리가스를 이 챔버내에 도입하는 가스도입수단과, 자장을 발생시키기 위한 자석과, 전자파를 발생시키기 위한 전자파원을 구비하여 이루어지는 드라이에칭장치로서 상기 챔버에 설치되어 광이 투과하는 부재와, 상기 투광성부재의 광학적으로 접속한 광파이버를 거쳐 상기 챔버내에 외부광을 유도하는 광도입수단과, 상기 투광성부재로 내부 반사한 다중반사광을 광파이버에 의하여 끄집어내는 광도출수단과, 그 반사광에 관하여 분광 및 광량측정의 적어도 어느 것인가를 실행하는 측정수단을 가지는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing apparatus is provided in the chamber as a dry etching apparatus comprising at least a chamber for performing a process and gas introduction means for introducing a processing gas into the chamber, a magnet for generating a magnetic field, and an electromagnetic wave source for generating electromagnetic waves. Light guide means for guiding external light into the chamber via a light transmitting member, an optical fiber connected optically to the light transmitting member, and light extraction means for picking out the multi-reflected light reflected internally by the light transmitting member with the optical fiber; And measuring means for performing at least one of spectroscopic and light quantity measurement with respect to the reflected light. 반도체 제조방법은 박막이용의 기능부재의 제조방법에 있어서, 반도체 제조장치의 챔버에 광을 유도하여 그 내부를 조사하고, 그반사광에 관하여 적어도 분광 및 광량측정의 한쪽을 실행하여 챔버내의 상황을 대기 개방하지 않고 측정하고, 그것과 동시에 기능부재의 표면에 박막을 형성하는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing method is a method of manufacturing a functional member using a thin film, in which light is guided to a chamber of a semiconductor manufacturing apparatus and irradiated therein, and at least one of spectroscopic and photometric measurements is performed on the reflected light to wait for a situation in the chamber. A semiconductor manufacturing apparatus and a semiconductor manufacturing method characterized by measuring without opening and simultaneously forming a thin film on the surface of a functional member. 반도체 제조방법은 박막이용의 기능부재의 제조방법에 있어서, 반도체 제조장치의 챔버내에 면하는 투광성 부재의 내부에서 반사한 다중반사광에 관하여 분광 및 광량측정의 적어도 한쪽을 실행하여 상기 부재의 표면에 부착한 물질의 양, 조성 및 성질의 적어도 어느 것인가를 측정하여 챔버내의 상태량을 대기 개방하지 않고 측정하고, 그것과 동시에 기능부재의 표면에 박막을 형성하는 것을 특징으로 하는 반도체 제조장치 및 반도체 제조방법.The semiconductor manufacturing method is a method of manufacturing a functional member using a thin film, wherein at least one of spectroscopic and photometric measurements is performed on a multi-reflected light reflected inside a translucent member facing a chamber of a semiconductor manufacturing apparatus and attached to the surface of the member. A semiconductor manufacturing apparatus and a semiconductor manufacturing method, characterized by measuring at least one of the amount, composition, and property of a substance to measure the amount of state in the chamber without opening the atmosphere, and simultaneously forming a thin film on the surface of the functional member. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940016242A 1993-09-20 1994-07-07 Apparatus and method for manufacturing semiconductor device KR0162934B1 (en)

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KR100744115B1 (en) * 2005-07-11 2007-08-01 삼성전자주식회사 Method for processing a semiconductor substrate using the feedback of the contamination state of a chamber
KR102576702B1 (en) * 2016-07-06 2023-09-08 삼성전자주식회사 Deposition process monitoring system, and method for controlling deposition process and method for fabricating semiconductor device using the system

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Publication number Priority date Publication date Assignee Title
KR102230162B1 (en) * 2019-12-02 2021-03-18 김인식 Rice cooker
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