KR950008862B1 - MANUFACTURING METHOD OF YBA2 CU3O7-x (X=0-0.5) SUPER CONDUCTOR - Google Patents
MANUFACTURING METHOD OF YBA2 CU3O7-x (X=0-0.5) SUPER CONDUCTOR Download PDFInfo
- Publication number
- KR950008862B1 KR950008862B1 KR1019920005522A KR920005522A KR950008862B1 KR 950008862 B1 KR950008862 B1 KR 950008862B1 KR 1019920005522 A KR1019920005522 A KR 1019920005522A KR 920005522 A KR920005522 A KR 920005522A KR 950008862 B1 KR950008862 B1 KR 950008862B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- thd
- superconductor
- temperature
- nozzle
- Prior art date
Links
- 239000002887 superconductor Substances 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title description 2
- 101000755440 Buchnera aphidicola subsp. Acyrthosiphon pisum (strain APS) Uncharacterized protein BU181 Proteins 0.000 title 1
- 101000784744 Buchnera aphidicola subsp. Baizongia pistaciae (strain Bp) Uncharacterized protein bbp_170 Proteins 0.000 title 1
- 101000755397 Buchnera aphidicola subsp. Schizaphis graminum (strain Sg) Uncharacterized protein BUsg_175 Proteins 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 230000000694 effects Effects 0.000 claims abstract description 4
- 238000009826 distribution Methods 0.000 claims description 14
- 239000002994 raw material Substances 0.000 claims description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000003786 synthesis reaction Methods 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000001308 synthesis method Methods 0.000 claims description 3
- 229910002367 SrTiO Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims 1
- 230000002194 synthesizing effect Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 235000021028 berry Nutrition 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
제1도는 본 발명에서 사용한 노즐과 기판사이의 온도분포를 표시한 도면.1 is a diagram showing a temperature distribution between a nozzle and a substrate used in the present invention.
제2도는 본 발명에서 사용한 화학증착장치의 도면.2 is a view of a chemical vapor deposition apparatus used in the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 후로우메타 2 : 히타1: Flow meter 2: Heater
3 : 서머카플 4 : 기판3: thermocouple 4: substrate
5 : 기판홀더 6 : 진공게이지5: substrate holder 6: vacuum gauge
7 : 진공조절밸브 8 : 진공펌프7: vacuum control valve 8: vacuum pump
9 : 가스밸브 10 : 노즐9 gas valve 10 nozzle
11 : Y(thd) 12 : Ba(thd)11: Y (thd) 12: Ba (thd)
13 : Cu(thd) 14,15,16 : 히타13: Cu (thd) 14,15,16: heater
본 발명은 금속 키레이트화합물을 사용한 화학증착법에 의한 YBa2Cu3O7-X(X=0-0.5)초전도체 박막의 제조방법에 관한 것이다. 금속 키레이트화합물을 사용한 화학증착법에 의한 YBa2Cu3O7-X(X=0-0.5)초전도체의 합성은, 미국의 베리(Berry)가 최초에 완성하였다. 이후 금속 키레이트화합물을 사용한 화학증착법에 의한 YBa2Cu3O7-X(X=0-0.5)초전도체의 합성기술이 진보하여 현재는 미국의 엠코어(Emcore)사에 의해 프라즈마 금속 키레이트화합물을 사용한 화학증착법이 개발되어 570도의 낮은 온도에서도 YBa2Cu3O7-X(X=0-0.5)초전도체의 합성이 가능하다. 또한 일본의 토호쿠(Tohoku) 대학에서는 프라즈마를 사용하지 않고 650℃에서 YBa2Cu3O7-X(X=0-0.5)초전도체를 합성하였다. 금속 키레이트화합물을 이용한 화학증착법은 제2도에 표시한 바와같이 반응관내의 진공도를 조절할 수 있는 장치내에서 제2도와 같이 키레이트화합물(11,12,13)과 기판(4)을 배치하고 원료 가열히타(14,15,16)를 가열해 키레이트화합물을 증발시켜 이들을 아르곤가스에 의해 운반하고 A에서 산소를 독립적으로 흘려서 기판히타(2)에 의해 가열된 기판(4)위에 YBa2Cu3O7-X(X=0-0.5)초전도체를 합성하는 방법이다.The present invention relates to a method for producing a YBa 2 Cu 3 O 7-X (X = 0-0.5) superconductor thin film by chemical vapor deposition using a metal chirate compound. The synthesis of the YBa 2 Cu 3 O 7-X (X = 0-0.5) superconductor by chemical vapor deposition using a metal chirate compound was first completed by Berry of the United States. Subsequently, the synthesis technology of YBa 2 Cu 3 O 7-X (X = 0-0.5) superconductor was improved by chemical vapor deposition using a metal chelate compound. The chemical vapor deposition method was developed to enable the synthesis of YBa 2 Cu 3 O 7-X (X = 0-0.5) superconductors even at low temperatures of 570 degrees. Also, Tohoku University of Japan synthesized YBa 2 Cu 3 O 7-X (X = 0-0.5) superconductor at 650 ° C without using plasma. In the chemical vapor deposition method using a metal chirate compound, as shown in FIG. 2, the chirate compounds 11, 12, 13 and the substrate 4 are arranged in a device capable of controlling the degree of vacuum in the reaction tube. YBa 2 Cu on the substrate 4 heated by the substrate heater 2 by heating the raw material heating heaters 14, 15 and 16 to evaporate the chirate compounds and transport them by argon gas and flowing oxygen in A independently. 3 O 7-X (X = 0-0.5) A superconductor is synthesized.
종래의 합성법에서는 산소를 산화가스로 사용하여 낮은 온도에서(800도 이하) YBa2Cu3O7-X(X=0-0.5)초전도체를 합성한 경우 임계전류밀도가 낮고 에피텍셜한(epitaxial) YBa2Cu3O7-X(X=0-0.5)초전도체 박막을 얻지 못하였다. 따라서 높은 임계전류밀도를 필요로하는 부분에의 응용에는 적합하지 않았다. 그러나 이러한 종래방법의 결점은 첫째, 기판과 노즐사이의 온도분포가 노즐로부터 기판쪽으로 온도가 증가하여 기판부의 온도가 최고온도로 되어 기판의 온도가 낮은 경우 원료가 통과하는 부분의 온도도 함께 낮아져 원료의 열적활성도가 낮고, 둘째, 산소의 분압을 조절하는 범위가 좁아 산소분압 및 기판온도사이의 관계에 대한 조건이 확립되어있지 않았다.In the conventional synthesis method, when YBa 2 Cu 3 O 7-X (X = 0-0.5) superconductor was synthesized at low temperature (below 800 ° C) using oxygen as an oxidizing gas, the critical current density was low and epitaxial. A YBa 2 Cu 3 O 7-X (X = 0-0.5) superconductor thin film was not obtained. Therefore, it is not suitable for the application to the part which needs high critical current density. However, the drawback of the conventional method is that, first, the temperature distribution between the substrate and the nozzle increases from the nozzle toward the substrate, so that the temperature of the substrate becomes the highest temperature. Because of its low thermal activity, and secondly, the range of regulating the partial pressure of oxygen is narrow, the conditions for the relationship between oxygen partial pressure and substrate temperature have not been established.
본 발명에서는 상술한 결점을 해결하기 위하여 노즐과 기판사이에서 최고온도가 나타나도록 노즐과 기판사이의 온도를 조절한 것인데 상기 첫째의 문제해결에 관한 본 발명은 종래의 방법에서는 서브스트레이트(Substrate)와 노즐사이의 온도분포를 특별히 조절하지 않으며 따라서 노즐과 원료가 YBaCuO로 증착되는 기판사이의 온도분포는 노즐부에서 부터 기판쪽으로 갈수록 온도가 높아지는 분포를 갖고 있다. 따라서 반응에 참여하는 원료가 기판에 도달하기까지 경유하는 온도가 기판의 온도보다 낮다. 이러한 온도분포를 가진 반응기에서는 Y(thd), Ba(thd), Cu(thd)가 분해되는 온도보다 낮은 온도에서 Y(thd), Ba(thd), Cu(thd)를 원료로 이용한 금속 키레이트화합물을 사용한 화학증착법에 의한 양질의 (Tc>77K) YBaCuO 초전도체의 제작은 불가능하다. 또한 서브스트레이트와 노즐사이의 온도가 Y(thd), Ba(thd), Cu(thd)가 분해되는 온도보다 높아도 Y(thd), Ba(thd), Cu(thd)가 분해되는 정도가 불충분하다. 그러나 본 발명에서는 서브스트레이트와 노즐사이의 온도분포를 서브스트레이트와 노즐사이에서 최고온도를 갖는 분포를 갖게함으로써 원료가 기판에 도달하기전 높은 온도영역을 지나오기 때문에 Y(thd), Ba(thd), Cu(thd)등의 원료가 충분히 분해될 수 있도록 하게하며, 또한 원료의 열적활성도를 높여 낮은 온도에서도 YBaCuO 막이 잘 성장하도록 한다. 이러한 발명을 통해 서크스트레이트와 노즐사이에서 최고온도를 갖는 분포를 갖게함으로써 MgO(100), SrTiO3(100), La-AlO3(100), YSZ(100), Al2O3(100) 폴리-크리스탈린(poly-crystalline) Al2O3등에 YBaCuO 결정을 성장시키는데 효과적이었다.In the present invention, in order to solve the above-described drawbacks, the temperature between the nozzle and the substrate is adjusted so that the maximum temperature appears between the nozzle and the substrate. The temperature distribution between the nozzles is not particularly controlled. Therefore, the temperature distribution between the nozzle and the substrate on which the raw material is deposited by YBaCuO has a distribution in which the temperature increases from the nozzle part toward the substrate. Therefore, the temperature passing through the raw material participating in the reaction until reaching the substrate is lower than the temperature of the substrate. In a reactor having such a temperature distribution, a metal chirate using Y (thd), Ba (thd), and Cu (thd) as raw materials at a temperature lower than the temperature at which Y (thd), Ba (thd), and Cu (thd) are decomposed. It is not possible to fabricate high-quality (Tc> 77K) YBaCuO superconductors by chemical vapor deposition using compounds. In addition, even if the temperature between the substrate and the nozzle is higher than the temperature at which Y (thd), Ba (thd) and Cu (thd) are decomposed, the degree of decomposition of Y (thd), Ba (thd) and Cu (thd) is insufficient. . In the present invention, however, the temperature distribution between the substrate and the nozzle has a distribution having the highest temperature between the substrate and the nozzle so that the raw material passes through the high temperature range before reaching the substrate, so that Y (thd), Ba (thd) It allows the raw material such as Cu (thd) to be sufficiently decomposed, and also increases the thermal activity of the raw material so that the YBaCuO film grows well even at low temperatures. Through this invention, MgO (100), SrTiO 3 (100), La-AlO 3 (100), YSZ (100), Al 2 O 3 (100) poly It was effective to grow YBaCuO crystals in -crystallin (poly-crystalline) Al 2 O 3 etc.
다음에 상기 둘째의 문제해결에 관한 본 발명은 종래의 방법에서는 Y(thd), Ba(thd), Cu(thd)를 원료로 이용한 금속 키레이트화합물을 사용한 화학증착법에 의한 YBaCuO 초전도체를 제조할 시에 단순히 산소분압을 조절함으로써 성장한 YBaCuO 막이 치밀하지 못하고, a, b 축이 기판(100)의 방향에 평행하지 않는다. 그러나 본 발명에서는 산소분압을 0.126torr-0.516torr까지 조절함은 물론 산소분자와 원료분자의 몰비를 조절함으로써 △T(T, onset-Tc, 0)를 작게하는 동시에 2차원적으로(100)기판//(100) YBCO이 에피텍셜필름(epitaxiel film)을 만들었다.Next, the present invention for solving the second problem is to prepare a YBaCuO superconductor by chemical vapor deposition using a metal chirate compound using Y (thd), Ba (thd), Cu (thd) as a raw material in the conventional method The YBaCuO film grown by simply adjusting the oxygen partial pressure is not dense, and the a and b axes are not parallel to the direction of the substrate 100. In the present invention, however, the oxygen partial pressure is controlled to 0.126torr-0.516torr as well as the molar ratio of the oxygen molecule and the raw material molecule to reduce ΔT (T, onset-Tc, 0) and at the same time two-dimensional (100) substrate. // (100) YBCO made epitaxial film.
이하 본 발명의 요지를 첨부도면 및 실시예에 연계시켜 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings and the embodiments.
실시예 1Example 1
제1도에 표시한 바와같은 본 발명에 의한 온도분포를 갖는 히터를 사용하여 산소분압을 변화시켜 YBaCuO 초전도체를 합성하였다. 결과를 제1표에 표시한다. 원료는 Y(thd), Ba(thd), Cu(thd)를 사용하고, 반응관의 압력은 4torr, 기판의 온도는 650℃로 노즐로 부터 7.5cm 떨어진 곳에 위치시켜 캐리어 가스인 아르곤의 유량은 273ml/min 합성하였다. 합성에 소요된 시간은 30분, 기판은 경면가공된 MgO 단결정을 사용하였고, (100)면을 성장면으로 하였다.YBaCuO superconductors were synthesized by varying the oxygen partial pressure using a heater having a temperature distribution according to the present invention as shown in FIG. The results are shown in the first table. The raw material is Y (thd), Ba (thd), Cu (thd), and the pressure of the reaction tube is 4torr and the temperature of the substrate is 650 ℃, located 7.5cm away from the nozzle. 273 ml / min was synthesized. The time required for the synthesis was 30 minutes, and the substrate was a mirror-machined MgO single crystal, and the (100) plane was used as the growth plane.
[표 1]TABLE 1
실시예 2Example 2
제1도에 표시한 바와같은 본 발명에 의한 온도분포를 갖는 히타를 사용하여, 기판의 종류를 변화시켜 YBaCuO 초전도체를 합성하였다. 결과를 제2표에 표시한다. 원료는 Y(thd), Ba(thd), Cu(thd)를 사용하고, 반응관의 압력은 4torr, 기판은 온도는 650℃로 노즐로 부터 7.5cm 떨어진 곳에 위치시켰으며, 산소의 분압은 0.01255torr, 캐리어 가스인 아르곤의 유량은 273ml/min에서 합성하였다. 합성에 소요된 시간은 30분, 단 결정기판은 경면가공하여 (100)면을 성장면으로 하였다.A YBaCuO superconductor was synthesized by changing the type of substrate using a heater having a temperature distribution according to the present invention as shown in FIG. The results are shown in the second table. The raw materials are Y (thd), Ba (thd), Cu (thd), the pressure of the reaction tube is 4torr, the substrate is located at 650 ℃, 7.5cm away from the nozzle, and the partial pressure of oxygen is 0.01255. torr and a flow rate of argon as a carrier gas were synthesized at 273 ml / min. The time required for the synthesis was 30 minutes, and the single crystal substrate was mirror-finished to make the (100) plane as the growth plane.
[표 2]TABLE 2
실시예 3Example 3
제1도에 표시한 바와같은 본 발명에 의한 온도분포를 갖는 히터를 사용하여 기판의 온도를 변화시켜 YBaCuO 초전도체를 합성하였다. 결과를 제3표에 표시한다. 원료는 Y(thd), Ba(thd), Cu(thd)를 사용하고, 반응관의 압력은 4torr, 캐리어 가스인 아르곤의 유량은 273ml/min에서 합성하였다. 합성에 소요된 시간은 30분, 단결정 기판은 경면가공하여 (100)면을 성장면으로 하였다.A YBaCuO superconductor was synthesized by varying the temperature of the substrate using a heater having a temperature distribution according to the present invention as shown in FIG. The results are shown in Table 3. Y (thd), Ba (thd), Cu (thd) was used as a raw material, and the pressure of the reaction tube was 4 torr and the flow rate of argon which is a carrier gas was synthesize | combined at 273 ml / min. The time required for the synthesis was 30 minutes, and the single crystal substrate was mirror-finished to make the (100) plane a growth plane.
[표 3]TABLE 3
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920005522A KR950008862B1 (en) | 1992-04-02 | 1992-04-02 | MANUFACTURING METHOD OF YBA2 CU3O7-x (X=0-0.5) SUPER CONDUCTOR |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920005522A KR950008862B1 (en) | 1992-04-02 | 1992-04-02 | MANUFACTURING METHOD OF YBA2 CU3O7-x (X=0-0.5) SUPER CONDUCTOR |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930022621A KR930022621A (en) | 1993-11-24 |
| KR950008862B1 true KR950008862B1 (en) | 1995-08-08 |
Family
ID=19331303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920005522A KR950008862B1 (en) | 1992-04-02 | 1992-04-02 | MANUFACTURING METHOD OF YBA2 CU3O7-x (X=0-0.5) SUPER CONDUCTOR |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950008862B1 (en) |
-
1992
- 1992-04-02 KR KR1019920005522A patent/KR950008862B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR930022621A (en) | 1993-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5032568A (en) | Deposition of superconducting thick films by spray inductively coupled plasma method | |
| KR910007382B1 (en) | Superconductor material and method of manufacturing super-conductor film | |
| Yoshida et al. | Surface morphology and growth mechanism of YBa2Cu3O7− y films by metalorganic chemical vapor deposition using liquid sources | |
| Zhao et al. | Low‐temperature in situ formation of Y‐Ba‐Cu‐O high T c superconducting thin films by plasma‐enhanced metalorganic chemical vapor deposition | |
| US5458086A (en) | Apparatus for growing metal oxides using organometallic vapor phase epitaxy | |
| US5453306A (en) | Process for depositing oxide film on metallic substrate by heat plasma flash evaporation method | |
| KR930004635B1 (en) | Method of manufacturing josepson junctions | |
| Erbil et al. | A Review of Metalorganic Chemical Vapor Deposition of High-Temperature | |
| KR950008862B1 (en) | MANUFACTURING METHOD OF YBA2 CU3O7-x (X=0-0.5) SUPER CONDUCTOR | |
| US5863336A (en) | Apparatus for fabrication of superconductor | |
| Han et al. | Cubic dielectrics for superconducting electronics. In situ growth of epitaxial strontium aluminum tantalate (Sr2AlTaO6) thin films using metalorganic chemical vapor deposition | |
| Harris et al. | MBE growth of high critical temperature superconductors | |
| US5240904A (en) | Process for preparing a-axis oriented superconducting oxide thin films | |
| Yoshida et al. | Preparation of a-axis oriented YBa2Cu3O7− y films by metalorganic chemical vapor deposition using liquid sources | |
| Kubota et al. | (110)-oriented Bi–Sr–Ca–Cu–O superconducting thin films prepared by metalorganic chemical vapor deposition | |
| JP3253295B2 (en) | Manufacturing method of oxide thin film | |
| US5314866A (en) | Formation of superconducting Bi-Sr-Ca-Cu-O films by organometallic chemical vapor deposition | |
| EP0329103B2 (en) | Process for manufacturing thin film of high-Tc superconducting oxide | |
| JPH035397A (en) | Vapor growth method for thin oxide crystal film | |
| JPH04193713A (en) | Oxide superconducting thin film and its production | |
| Zeng et al. | Microstructures of epitaxial YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta//thick films grown by photoassisted metal-organic chemical vapor deposition | |
| JPH0270061A (en) | Production of superconducting thin film | |
| Abe et al. | Thin Film, OMCVD Process for High-T c Superconductivity | |
| Aoki et al. | Rapid synthesis of Y-Ba-Cu-O tape on metal substrate by chemical vapor deposition technique | |
| Ishiai et al. | Preparation of Bi2Sr2Can− 1 CunO2n+ 4 (n= 1, 2, 3 and 4) thin films by MOCVD |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20070808 Year of fee payment: 13 |
|
| LAPS | Lapse due to unpaid annual fee |