KR950004941A - Solid state imaging device and manufacturing method thereof - Google Patents

Solid state imaging device and manufacturing method thereof Download PDF

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Publication number
KR950004941A
KR950004941A KR1019930014471A KR930014471A KR950004941A KR 950004941 A KR950004941 A KR 950004941A KR 1019930014471 A KR1019930014471 A KR 1019930014471A KR 930014471 A KR930014471 A KR 930014471A KR 950004941 A KR950004941 A KR 950004941A
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South Korea
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light
solid state
photoelectric conversion
image pickup
region
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KR1019930014471A
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Korean (ko)
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KR970005728B1 (en
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김영대
이승우
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김광호
삼성전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

광흡수영역을 내부에 구비함으로써 스미어 현상이 억제되는 비디오 카메라등에 적용되는 고체촬상장치.A solid state imaging device applied to a video camera or the like in which a smear phenomenon is suppressed by providing a light absorption area therein.

광전변환영역의 주위를 따라 형성되는 채널 스토퍼층상에 광흡수영역을 형성시켜주기 때문에, 수광부를 통하여 경사져 입사된 불필요한 광이 상기 광흡수영역에서 흡수되어 광의 난반사에 의한 스미어성분이 저감되고, 고체촬상장치가 고화질화 된다.Since the light absorbing region is formed on the channel stopper layer formed along the periphery of the photoelectric conversion region, unnecessary light incident on the light absorbing portion is incident on the light absorbing region and is absorbed in the light absorbing region, thereby reducing the smear component due to the diffuse reflection of the light. The device is high quality.

Description

고체촬상장치 및 그 제조방법Solid state imaging device and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도는 종래의 다른 고체촬상장치로서 상기 제1도의 AA'선에 대응하는 부분을 자른 단면도. 제5도는 본 발명에 의한 고체촬상장치로서 상기 제1도의 AA'선에 대응하는 부분을 자른 단면도. 제6도는 본 발명에 의한 고체촬상장치의 단위 셀을 나타내는 레이아웃도. 제7도는 내지 제13도는 본 발명의 고체촬상장치의 제조공정을 각 단계별로 나타낸 단면도들.4 is a cross-sectional view of another conventional solid state imaging device, taken along the line AA ′ of FIG. 1. 5 is a cross-sectional view of a solid state imaging device according to the present invention, taken along the line AA ′ of FIG. 1. 6 is a layout showing unit cells of the solid-state imaging device according to the present invention. 7 to 13 are cross-sectional views showing each step of the manufacturing process of the solid-state imaging device of the present invention.

Claims (12)

수광부를 한정할 수 있도록 그 둘레를 따라 형성되어지는 차광층과, 상기 수광부를 통하여 입사된 광에 의해 신호전하가축적되는 반도체기판 내의 광전변환영역과, 상기 광전변환영역에 인접하여 상기 축적된 신호전하를 전송하는 전하전송채널과, 상기 광전변환영역과 전하전송채널을 연결하는 채널부분만을 제외하고 상기 광전변환영역의 둘레를 따라 형성된 채널 스토퍼층, 및 상기 채널 스토퍼층상의 일부에 형성된 광흡수영역을 구비하여 이루어진 것을 특징으로 하는 고체촬상장치.A light shielding layer formed along the periphery so as to define a light receiving portion, a photoelectric conversion region in a semiconductor substrate where signal charges are accumulated by light incident through the light receiving portion, and the accumulated signal adjacent to the photoelectric conversion region. A channel stopper layer formed along a circumference of the photoelectric conversion region except for a charge transfer channel for transferring charge, a channel portion connecting the photoelectric conversion region and the charge transfer channel, and a light absorption region formed on a portion of the channel stopper layer Solid-state imaging device comprising a. 제1항에 있어서, 상기 광전변환영역의 수직구조가 오버-플로우 드레인 구조로 된 것임을 특징으로 하는 고체촬상장치.The solid state image pickup device according to claim 1, wherein the vertical structure of the photoelectric conversion region is an over-flow drain structure. 제2항에 있어서, 상기 오버-플로우 드레인 구조의 도전형은 상부로부터 PNPN형인 것을 특징으로 하는 고체촬상장치.The solid state image pickup device according to claim 2, wherein the conductivity type of the over-flow drain structure is PNPN type from above. 제1항에 있어서, 상기 광흡수영역은 실리콘 또는 실리콘산화막보다 광흡수계수가 큰 물질로 이루어진 것을 특징으로 하는고체촬상장치.The solid state image pickup device according to claim 1, wherein the light absorption region is made of a material having a light absorption coefficient greater than that of silicon or silicon oxide film. 제4항에 있어서, 상기 광흡수영역은 티타늄을 포함하는 물질로 이루어진 것을 특징으로 하는 고체촬상장치.The solid state imaging device of claim 4, wherein the light absorption region is made of a material including titanium. 제1항에 있어서, 상기 전하전소채널 위로 전송전극이 형성된 것을 특징으로 하는 고체촬상장치.The solid state image pickup device according to claim 1, wherein a transfer electrode is formed on the charge transfer channel. 제6항에 있어서, 상기 전송전극이 가장자리 일부와 상기 광흡수영역이 오버랩되는 것을 특징으로 하는 고체촬상장치.7. The solid state image pickup device according to claim 6, wherein a portion of an edge of the transfer electrode overlaps the light absorption region. 제6항에 있어서, 상기 전송전극 하부의 절연층은 ONO(Oxide Nitride Oxide)구조로 된 것을 특징으로 하는 고체촬상장치.7. The solid state image pickup device according to claim 6, wherein the insulating layer under the transfer electrode has an ONO (Oxide Nitride Oxide) structure. 제1항에 있어서, 상기 차광층은 수광내부로 연장되지 않고 상기 광흡수영역의 수광부 측면에 거의 수직적으로 일치되는것을 특징으로 하는 고체촬상장치.The solid state image pickup device according to claim 1, wherein the light blocking layer is substantially perpendicular to the side of the light receiving portion of the light absorption region without extending into the light receiving portion. 입사광에 의하여 신호전하가 축적되어지는 제1도전형의 광전변환영역과 이에 인접하여 전하전송채널이 형성되어진 반도체기판상에 산화막을 형성하는 공정과, 상기 광전변환영역과 전하전송채널 사이에 형성되는 채널부분만을 제외하고 상기 광전변환영역의 둘레를 따라 제2도전형의 불순물을 주입하여 채널 스토퍼층을 형성하는 공정과, 상기 채널 스토퍼층상의 상기 산화막을 부분적으로 제거하고 전면에 광흡수물질을 형성하는 공정과, 상기 산화막이 부분적으로 제거된 부분에만 상기 광흡수물질이 남도록 광흡수물질을 제거하여 광흡수영역을 형성하는 공정과, 상기 결과물 전면에 제1절연층을 형성한후 상기 전하전송채널 위로 전송전극을 형성하는 공정, 및 상기 결과물 전면에 제2절연층을 형성한 후 상기 광전변환영역위를 제외하고 차광층을 형성하는 공정을 구비하여 이루어진 것을 특징으로 하는 고체촬상장치의 제조방법.Forming an oxide film on the first conductive photoelectric conversion region in which signal charges are accumulated by incident light and a semiconductor substrate on which a charge transfer channel is formed adjacent thereto, and formed between the photoelectric conversion region and the charge transfer channel. Forming a channel stopper layer by injecting impurities of a second conductivity type along the circumference of the photoelectric conversion region except for the channel portion, partially removing the oxide film on the channel stopper layer and forming a light absorbing material on the entire surface And forming a light absorbing region by removing the light absorbing material so that the light absorbing material remains only in a portion where the oxide film is partially removed, and forming a first insulating layer on the entire surface of the resultant. Forming a transfer electrode, and forming a second insulating layer on the entire surface of the product, and then shielding the light except for the photoelectric conversion region. Method for manufacturing a solid-state imaging device, characterized in that made in a step of forming a. 제10항에 있어서, 상기 제1절연층은 산화막, 질화막, 산화막을 차례로 형성시켜 준 것임을 특징으로 하는 고체촬상장치의제조방법.The method of manufacturing a solid state image pickup device according to claim 10, wherein the first insulating layer is formed by sequentially forming an oxide film, a nitride film, and an oxide film. 제10항에 있어서, 상기 전송전극을 형성한 후 전면에 제2도전형의 불순물을 주입하여 상기 광전변환영역의 표면에 제2도전형영역을 형성시켜주는 것을 특징으로 하는 고체촬상장치의 제조방법.The method of manufacturing a solid state image pickup device according to claim 10, wherein after the transfer electrode is formed, a second conductive region is formed on the surface of the photoelectric conversion region by implanting impurities of a second conductivity type on the front surface thereof. . ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930014471A 1993-07-28 1993-07-28 Charge coupled device & method for forming the same KR970005728B1 (en)

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KR1019930014471A KR970005728B1 (en) 1993-07-28 1993-07-28 Charge coupled device & method for forming the same

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KR1019930014471A KR970005728B1 (en) 1993-07-28 1993-07-28 Charge coupled device & method for forming the same

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KR950004941A true KR950004941A (en) 1995-02-18
KR970005728B1 KR970005728B1 (en) 1997-04-19

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