KR950004149Y1 - Vapor deposition apparatus - Google Patents

Abstract

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Description

Vapor deposition apparatus

1 is a schematic structural diagram of general vapor deposition.

2 is a detailed device diagram of FIG.

3 is a device diagram of the present invention.

The present invention relates to a semiconductor vapor deposition apparatus for depositing SiO ₂ film using tetraethoxy silane (TEOS) gas.

CVD (Chemical Vapor Deposition) means gas phase growth accompanied by chemical reaction, and single crystal semiconductor (epitaxial growth) or insulating film (SiO ₂ , Si ₃ ) is used on the substrate by using chemical reaction such as pyrolysis, hydrolysis and oxidation in the gas phase. N ₄ , Al ₂ O ₃ ) to grow. Referring to FIG. 1, a process of forming a SiO ₂ film is carried out, and a container 11 for evaporating tetraethoxysilane (hereinafter referred to as TEOS) in a thermostat 10 maintained at 60-70 ° C. 11) The outlet is connected to the supply pipe 12 for supplying the carrier gas, which is made to be supplied to the quartz tube 14 through the injection tube (13).

The heater 15 is coated along the longitudinal direction on the outer circumference of the injection tube 13 of the quartz tube 14.

In the quartz tube 14, a sample 17 to be deposited on the susceptor 16 is placed, and an electric furnace 18 heated to 600-700 ° C is provided on the outer circumference of the quartz tube 14. The outlet of the quartz tube 14 is connected to a vacuum pump that vacuums the inside of the quartz tube 14.

More specifically, as shown in FIG. 2, the outer circumference of the quartz tube 14, which is a chamber, surrounds the electric furnace 18, and the inlet tube 13 and the supply tube 12 are connected to the inlet of the quartz tube 14, respectively. The bellows portion 20 is connected to the outlet. The supply pipe 12 is nitrogen gas (N ₂ ) is made to be distributed to the first auxiliary valve (V1), the first flow controller (F1) and the second flow controller (F2) is selectively operated to be supplied to the quartz pipe (14). First injection valves V10 and V11 and second valves V20 and V21 are respectively connected to the injection output units of the first flow controller F1 and the second control flow controller F2. The injection tube 13 supplies TEOS in the container 11 in the constant temperature 10 to the quartz tube 14, and the heater 15 is coated in the longitudinal direction on the outer circumference of the injection tube 13. The flow rate of the injection pipe 13 is controlled by the third flow controller F3, opened and closed by the third valves V30 and V31, and the TEOS is connected to the TEOS valve V40 through the TEOS supply valve V42 in the water collector. , V41) to control the supply. In addition, the nitrogen gas (N ₂ ) is connected to the inlet of the third flow controller (F3) by the second auxiliary valve (V ₂ ), the bypass valve (V6) is connected to the input and output of the third flow controller (F3). .

The outlet of the bellows portion 20 is provided with a filter portion 30 which is directly connected to the water cooling trap 31 and the particulate trap 32, the main gate valve (V50) and the soft start valve at the output end of the filter portion 30 The valve unit 50 in a state in which V51 is connected in parallel is connected, and the valve unit 50 is connected to the discharge unit by the vacuum pump unit 40.

A third auxiliary valve (V3) is further connected to the outlet of the third flow control unit (F3) is connected to the output end of the vacuum valve 40, the fourth flow controller (F4) is a separate nitrogen gas (N ₂ ) It is connected to the output terminal of the third auxiliary valve (V3). The output end of the third flow controller F3 is also connected to the output end of the valve unit 50 via the discharge valves V4 and V5.

In this case, the first control flow controller F1 is 1 SLM (Spuare liter per minutes), the second control flow controller F2 is 20 SLM (Square liter per minutes), and the third control flow controller (F3) is 200 SCCM (Square). CC per minutes). That is, the first flow controller F1 adjusts and supplies nitrogen gas N ₂ , which is an initial carrier gas, in the quartz tube 14, and the second flow controller F2 supplies a substrate such as a wafer deposited after deposition. In order to generate an atmospheric pressure to discharge, the third flow controller F3 controls the supply amount of TEOS. At this time, the bypass valve V6 is oversupplied to vent the remaining gas. The third auxiliary valve V3 discharges the excess carrier gas V2 to the discharge part which is the output end of the vacuum pump part 40, and the discharge valves V4 and V5 are connected to the input end of the vacuum pump part 40 to nitrogen gas. Facilitates the discharge of (N ₂ ). The bellows portion 20 reduces the moving speed of particles and the like discharged during vacuum, and the water cooling trap 31 cools the heated air, and then filters the fine particles from the fine particle trap 32.

The menin gate valve V50 controls the connection with the vacuum pump 40 when the vacuum pump 40 makes a vacuum (1 torr), and the soft start valve (V51) before the main gate valve V50 operates. It is a valve that gradually increases the suction amount so as to gradually create a vacuum in the quartz tube 14. That is, when the soft start valve V51 gradually makes the vacuum to a predetermined level (1 torr), the soft start valve V51 is closed and connected to the main gate valve V50, resulting in an initial vacuum inside the quartz tube 14. This prevents the sample from coming off.

In this case, since the length of the gas injection pipe 13 for supplying the TEOS gas is quite long, there is a high probability of condensation of the vaporized gas TEOS in the gas injection pipe 13, and a heating tape for heating the gas injection pipe 13. The heater (15) of the length is too long to cause frequent breakdowns, difficult maintenance due to the complex supply pipe 12 and the injection pipe 13 configuration exposed irrationality, the third flow controller (F3) is also unable to heat itself Difficulties occurred in flow control.

In addition, when the atmospheric pressure after vacuum, the unreacted product is a vortex caused by nitrogen gas supply, and there is no means to minimize contact with the wafer substrate, which causes frequent particles and spots after deposition. During the process, the water cooling trap 31, which is impossible to use toward the exit of the quartz tube 14, cannot be properly controlled, and various problems are formed due to the unreaction of TEOS due to excessive cooling, which causes damage to the wafer substrate. come.

The present invention solves this problem by minimizing the length of the injection tube of the quartz tube to reduce condensation in the injection tube and to enable the third flow controller to self-heat. An additional soft start valve is provided to minimize the vortex after the vacuum operation. When the nitrogen gas (N ₂ ) for the back fill (flow) flows by the mounting it is characterized in that to reduce the contact between the reactant and the wafer substrate as possible.

That is, in the semiconductor vapor deposition apparatus including the first to fourth flow controllers, quartz tubes, vacuum pumps, valves, TEOS supply containers, supply tubes, injection tubes, and bypass valves, the third flow controller includes a heater. Remove the bypass valve, connect the injection pipe passing through the third valve directly to the supply pipe, the valve part is directly connected to the outlet of the quartz tube, and additional soft start valve is connected to the valve part in parallel with the soft start valve, and the fourth flow controller The output stage and the valve output stage are connected to a multi-trap in which traps are continuously arranged.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the same components as in the related art will be denoted by the same reference numerals, but the structures having the same names but with different structures will be denoted by putting prime marks in the symbols.

The present invention is the first to fourth flow controllers (F1 to F4), quartz tube 14, vacuum pump 40, valve unit 50, TEOS supply container 11, supply tube 12, injection tube ( In the semiconductor vapor deposition apparatus comprising a 13) and a bypass valve V6, a heater 100 is built into the third flow controller F3 'and an injection pipe 13 passing through the third valve V3 is connected. Directly connected to supply pipe 12, valve portion 50 'is directly connected to the outlet of quartz tube 14, and additional soft start valve V53 is connected to valve portion 50' in parallel with soft start valve V51. The fourth flow controller F4 output terminal and the valve unit 50 output terminal are connected to the multi-trap 200 in which the traps are continuously arranged.

The present invention supplies TEOS to the container 11 through a water collector, a TEOS supply valve (V42), and a TEOS valve (V41) so that the TEOS is filled, and the thermostat 10 is heated to 60-70 ° C. to vaporize it. do. In this state, the third flow controller F3 ′ and the third valve V31 are provided to the quartz tube 14. Of course, the sample 17 is placed inside the quartz tube 14 by the susceptor 16 as shown in FIG. 1, and the proper vacuum is maintained by the vacuum pump 40. As shown in FIG. Carrier nitrogen gas (N ₂ ) is also provided to the supply pipe (12) through the first flow controller (F1). At this time, since the TEOS gas is directly connected to the supply pipe 12 and injected into the quartz pipe 14, the length of the injection pipe 13 is shortened accordingly, thereby reducing the maintenance cost by the heater 15 and reducing the side effects of internal condensation. do.

In addition, the outlet of the quartz tube 14, which is a chamber, is connected to the multi-trap 200 through the valve unit 50 'and is removed from the multi-stage trap such as unreacted gas and particles in the multi-trap 200, and thus, the conventional filter unit. Like 30, the water cooling trap 31 and the particulate trap 32 do not need to be composed of two parts, so that the installation is easy. In addition, by installing the multi-trap 200 it is possible to prevent the condensation by the bellows portion 20 by performing the trap function even without the bellows portion 20.

When the deposition process is completed as described above and the quartz tube 14 is made at atmospheric pressure to discharge the deposited sample, it is supplied through the second flow controller F having a large flow rate. However, the present proposal first operates the additional soft start valve V53 in response to the supply through the second flow controller F2.

Since the soft start valve V53 has a small pipe size and is operated to gradually bring it to atmospheric pressure, the wafer sample 17 is dropped from the susceptor 16 by a nitrogen gas supplied from the second flow controller F2 at an instant. It can prevent surface damage by collision with reacted gas and fine particles.

Claims (1)

First to fourth flow controllers (F1 to F4), quartz tube 14, vacuum pump portion 40, valve portion 50, TEOS supply container 11, supply tube 12, injection tube 13 and In the semiconductor vapor deposition apparatus comprising the bypass valve V6, the heater 100 is incorporated into the third flow controller F3 ', and the injection pipe 13 passing through the third valve V3 is supplied to the supply pipe 12. Valve part 50 'is directly connected to the quartz tube 14 outlet, and an additional soft start valve V53 is connected to the valve part 50' in parallel with the soft start valve V51. 4 flow controller (F4) output terminal and the valve unit 50 output terminal is a semiconductor vapor deposition apparatus, characterized in that the trap is connected to the multi-trap 200 is arranged continuously.