KR950001943A - Oxide film formation method of semiconductor device and manufacturing process thereof - Google Patents

Oxide film formation method of semiconductor device and manufacturing process thereof Download PDF

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Publication number
KR950001943A
KR950001943A KR1019930010712A KR930010712A KR950001943A KR 950001943 A KR950001943 A KR 950001943A KR 1019930010712 A KR1019930010712 A KR 1019930010712A KR 930010712 A KR930010712 A KR 930010712A KR 950001943 A KR950001943 A KR 950001943A
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KR
South Korea
Prior art keywords
gas
process tube
oxide film
tube
semiconductor device
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Application number
KR1019930010712A
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Korean (ko)
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KR970000702B1 (en
Inventor
김천수
방철원
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019930010712A priority Critical patent/KR970000702B1/en
Publication of KR950001943A publication Critical patent/KR950001943A/en
Application granted granted Critical
Publication of KR970000702B1 publication Critical patent/KR970000702B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Abstract

본 발명은 건식 및 습식산화 단계시 N2가스를 블로우시켜 공정튜브내의 압력을 높임으로써 공정시간을 단축하고 공정온도를 낮추며, 균일도가 높은 양질의 산화막을 형성할 수 있도록 공정튜브 벽에 형성되어 공정튜브에 열을 가하는 가열선(1)과; 산화공정에 이용되는 O2및 O2/H2가스가 유입되는 제 1 가스라인(2)과; 공정튜브의 압력을 높여주기 위한 가스가 유입되되 가스밸브(4)가 부착된 제 2 가스라인(3)과; 도어밸브(7)가 부착된 튜브 정면 도어(5)와; 정면 도어(5) 부위에 형성되어 공정튜브의 압력 값을 감지하는 압력 센서(6)를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 산화막 성장 공정튜브에 관한 것이다.The present invention is formed on the wall of the process tube to shorten the process time, lower the process temperature, form a high-quality oxide film with high uniformity by blowing the N 2 gas in the dry and wet oxidation step to increase the pressure in the process tube A heating wire 1 for heating the tube; A first gas line 2 into which O 2 and O 2 / H 2 gas used for the oxidation process are introduced; A second gas line 3 into which gas for increasing the pressure of the process tube is introduced, but the gas valve 4 is attached; A tube front door 5 to which a door valve 7 is attached; It relates to an oxide film growth process tube of a semiconductor device, characterized in that it comprises a pressure sensor (6) formed on the front door (5) to sense the pressure value of the process tube.

Description

반도체 소자의 산화막 형성 방법 및 그 제조 공정튜브Oxide film formation method of semiconductor device and manufacturing process thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 필드 산화막 성장시 각 단계별 공정 조건도, 제 2도는 본 발명에 따른 산화막 성장 공정튜브 단면도, 제3도는 본 발명의 일실시예에 따른 필드 산화막 성장시 각 단계별 공정 조건도.1 is a process condition diagram of each step in the growth of the field oxide film, FIG. 2 is a cross-sectional view of the oxide film growth process tube according to the present invention, and FIG.

Claims (3)

반도체 소자의 산화막 형성 방법에 있어서, 건식 및 습식산화 단계시 공정튜브내의 압력을 높이기 위하여 상기 공정튜브에 소정의 N2가스를 블로우시키는 것을 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 산화막 형성 방법.A method of forming an oxide film of a semiconductor device, the method comprising forming a predetermined N 2 gas into the process tube to increase the pressure in the process tube during the dry and wet oxidation steps. 반도체 소자의 산화막 제조 공정튜브에 있어서, 공정튜브 벽에 형성되어 공정튜브에 열을 가하는 가열선(1)과, 산화공정에 이용되는 O2및 O2/H2가스가 유입되는 제 1 가스라인(2)과, 공정튜브의 압력을 높여주기 위한 소정의 가스가 유입되되 가스밸브(4)가 부착된 제 2 가스라인(3)과, 도어 밸브(7)가 부착된 튜브 정면 도어(5)와, 정면 도어(5) 부위에 형성되어 공정튜브의 압력 값을 감지하는 압력 센서(6)를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 산화막 제조 공정튜브.In a process tube for producing an oxide film of a semiconductor device, a heating line (1) formed on a wall of a process tube and applying heat to the process tube, and a first gas line into which O 2 and O 2 / H 2 gases used for the oxidation process flow. (2), a second gas line (3) to which a predetermined gas is introduced to increase the pressure of the process tube, and the gas valve (4) is attached, and the tube front door (5) to which the door valve (7) is attached. And a pressure sensor (6) formed at a portion of the front door (5) to sense a pressure value of the process tube. 제1항에 있어서, 상기 가스밸브(4) 및 도어 밸브(7)는 압력센서(6)에 의해 감지된 압력값과 세팅된 압력 값을 비교하여 제어하는 제어기(8)에 의해 구동되는 것을 특징으로 하는 반도체 소자의 산화막 제조 공정튜브.2. The gas valve (4) and the door valve (7) according to claim 1, characterized in that the gas valve (4) and the door valve (7) are driven by a controller (8) which compares and controls the pressure value detected by the pressure sensor (6) with the set pressure value. Oxide film production process tube of a semiconductor device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930010712A 1993-06-12 1993-06-12 Oxidation method of semiconductor device KR970000702B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930010712A KR970000702B1 (en) 1993-06-12 1993-06-12 Oxidation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930010712A KR970000702B1 (en) 1993-06-12 1993-06-12 Oxidation method of semiconductor device

Publications (2)

Publication Number Publication Date
KR950001943A true KR950001943A (en) 1995-01-04
KR970000702B1 KR970000702B1 (en) 1997-01-18

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Application Number Title Priority Date Filing Date
KR1019930010712A KR970000702B1 (en) 1993-06-12 1993-06-12 Oxidation method of semiconductor device

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Publication number Publication date
KR970000702B1 (en) 1997-01-18

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