KR950000855B1 - Aluminum film depositing method and apparatus - Google Patents

Aluminum film depositing method and apparatus Download PDF

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KR950000855B1
KR950000855B1 KR1019880017531A KR880017531A KR950000855B1 KR 950000855 B1 KR950000855 B1 KR 950000855B1 KR 1019880017531 A KR1019880017531 A KR 1019880017531A KR 880017531 A KR880017531 A KR 880017531A KR 950000855 B1 KR950000855 B1 KR 950000855B1
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substrate
voltage
power supply
target
voltage applied
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KR900011063A (en
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윤기천
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삼성전관 주식회사
김정배
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

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Abstract

The sputtering apparatus includes a RF power supply unit (1), a matching circuit unit (2) and a vacuum vessel (4). The method includes connecting a substrate (8) in the vessel (4) to a DC power supply unit (3) for voltage variableness, attaching an Al target (7) to an electrode (6), and applying a DC voltage of 20-30 V to the substrate (8) under the ultra high vacuum state of 2×10-8 torr. and for a constant period (t), i.e., t = αVsV/VtA (where α is the proportional constant, Vs is the bias voltage applied to the substrate, Vt is the voltage applied to the target, and V is the sputtering rate), thereby depositing a thin aluminum film of a dense structure on the substrate.

Description

A1박막의 제조방법 및 그 장치A1 thin film manufacturing method and apparatus

제 1 도는 본 발명에 의한 A1박막 제조장치의 개략도.1 is a schematic diagram of an A1 thin film production apparatus according to the present invention.

제 2 도는 본 발명에 의하여 제조되는 A1박막의 조직 상태도.2 is a tissue state diagram of the A1 thin film prepared according to the present invention.

제 3 도는 종래 발명에 의하여 제조된 A1박막의 조직 상태도.3 is a state diagram of the structure of the A1 thin film prepared according to the conventional invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : RF전원 2 : 정합회로1: RF power supply 2: matching circuit

3 : DC전원 4 : 진공조3: DC power source 4: vacuum chamber

5 : 마그넷트 어셈블리 6 : 전극5: magnet assembly 6: electrode

7 : AL타겟 8 : 기판7: AL target 8: Board

9 : A1원자9: A1 atom

본 발명은 액정 TV용 TFT(Thin film Transistor : 박막형 트랜지스터)등의 도전막으로 사용되는 A1(알루미늄) 박막의 제조방법 및 그 장치에 관한 것으로, 특히 AC형 스퍼터링(Sputtering)장치에서 기판에 DC전원을 연결시키고 A1박막제조시 상기 DC전원을 이용하여 기판에 일정주기의 바이어스(Bias)전압을 인가하여 치밀한 조직을 갖는, 미세패턴(Pattern)의 A1박막을 제조하는 방법 및 그 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an A1 (aluminum) thin film used as a conductive film, such as a TFT (thin film transistor) for a liquid crystal TV, and an apparatus thereof. In particular, a DC power source for a substrate in an AC type sputtering device The present invention relates to a method for manufacturing an A1 thin film of a fine pattern having a dense structure by applying a bias voltage of a predetermined period to a substrate by using the DC power supply when the A1 thin film is manufactured.

일반적으로, 도전막으로 사용되는 금속박막 중 가장 널리 사용되는 A1박막의 제조방법으로 열증착법, 스퍼터링 방법 또는 일렉트론 비임(Electron Beam)증착법 등이 있으며 이들 방법중 빠른시간에 다량의 우수한 박막을 얻을 수 있는 방법으로서 스퍼터링 방법이 널리 행하여 지고 있는데, 상기 스퍼터링 방법은 다시 DC형 스퍼터링 방법과 AC형 스퍼터링 방법으로 나눌 수 있다.In general, among the metal thin films used as conductive films, thermal film deposition, sputtering, or electron beam deposition may be used as the most widely used method of A1 thin film. The sputtering method is widely used as a method, and the sputtering method can be further divided into a DC type sputtering method and an AC type sputtering method.

상기 DC형 스퍼터링 방법은 DC형 스퍼터 장치를 이용하는 것으로, 진공조 내에 Ar(아르곤) 기체를 주입하고, A1타겟(Target)에는 음(-) 전극을, 기판에는 양(+) 전극을 설치한 후 상기 각 전극사이에 고전압을 인가하여 음전극이 설치된 A1타겟으로 부터 물질을 석출시켜 양전극이 설치된 기판상에 증착시킴으로써 A1박막을 얻는 방법인 바, 상기와 같은 방법으로 제조된, 0.3μm 이하의 선폭을 갖는 미세패턴의 A1박막에서는 제 3 도에 도시된 바와 같이 기판(50)에의 증착시 A1원자(51)간의 결합조직이 치밀하게 이루어지지 않아 전류가 흐르면 단선이 발생하여 불량이 되는 경우가 많다는 문제점이 제기되었다.The DC type sputtering method uses a DC type sputtering device, injects Ar (argon) gas into the vacuum chamber, installs a negative electrode on the A1 target, and a positive electrode on the substrate. A high voltage is applied between the electrodes to deposit a material from an A1 target provided with a negative electrode and deposit the material on a substrate provided with a positive electrode to obtain an A1 thin film. A line width of 0.3 μm or less manufactured by the above method is obtained. In the A1 thin film having a fine pattern, as shown in FIG. 3, when the deposition is performed on the substrate 50, the connective structure between the A1 atoms 51 is not dense, and when current flows, a disconnection occurs and becomes a problem. This was raised.

본 발명은 이와 같은 문제점을 개선하기 위하여 RF전원과 정합회로 및 진공조로 이루어지고 상기 진공조내의 기판에 전압 가변용 DC전원(3)을 연결하고 스퍼터링시에 일정한 진공조 조건하에서 상기 DC전원을 이용하여 일전크기의 바이어스 전압을 일정주기로 기판(8)에 인가하도록 된 AC형 스퍼터링 장치에 있어서, 상기 기판(8)에 인가되는 전압의 크기는 -20∼-30V이고, 상기 바이어스 전압의 인가주기

Figure kpo00001
(여기서 α는 비례계수, Vs는 기판에 인가되는 바이어스 전압, Vt는 타겟에 인가되는 전압, V는 증착속도)로써 기판상에 증착하는 A1원자 상호간의 결합력을 증가시켜 치밀한 조직을 갖는 A1박막을 얻고자 하는데 목적이 있다.The present invention consists of an RF power source, a matching circuit and a vacuum chamber to improve the above problems, and connects the voltage variable DC power supply 3 to the substrate in the vacuum chamber and uses the DC power supply under constant vacuum bath conditions during sputtering. In the AC type sputtering apparatus in which a bias voltage of one magnitude is applied to the substrate 8 at a predetermined cycle, the voltage applied to the substrate 8 is -20 to -30 V, and the application period of the bias voltage is
Figure kpo00001
(Where α is the proportional coefficient, Vs is the bias voltage applied to the substrate, Vt is the voltage applied to the target, and V is the deposition rate) to increase the bonding force between the A1 atoms deposited on the substrate to form an A1 thin film having a dense structure. The purpose is to gain.

첨부된 도면에 의하여 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

본 발명은 제 1 도에 도시된 바와 같이 먼저 RF전원(1)과 정합회로(2) 및 진공조(4)로 이루어진 AC형 스퍼터 장치에 있어서, 상기 진공조(4) 내에 설치된 기판(8)에 DC전원(3)을 연결하여 전압을 가변할 수 있도록 구성한 다음 A1타겟(7)을 마그넷트 어셈블리(Magnet Assembly)(5)가 설치된 전극(6)에 부착한다.As shown in FIG. 1, the present invention is directed to an AC type sputtering device consisting of an RF power source 1, a matching circuit 2, and a vacuum chamber 4, wherein a substrate 8 provided in the vacuum chamber 4 is provided. The DC power supply 3 is connected to the DC power source 3 so that the voltage can be changed, and then the A1 target 7 is attached to the electrode 6 provided with the magnet assembly 5.

이와 같은 준비가 완료된 후, 먼저 진공조(4) 내부 압력을 2 S10-8torr로 하여 초 고진공상태로 한 후 Ar 기체를 주입하고, RF전원(1)를 ON상태로 하여 스퍼터를 실시하는 데, 이때 DC전원(3)을 이용하여 기판(8) -20∼-30V의 바이어스 전압을 가한다.After the preparation is completed, first, the internal pressure of the vacuum chamber 4 is set to 2 S10 -8 torr to be ultra-high vacuum state, then Ar gas is injected, and the RF power source 1 is turned ON to perform sputtering. At this time, a bias voltage of -20 to -30V is applied to the substrate 8 using the DC power supply 3.

그러나 기판(8)에 대한 지속적인 바이어스 전압의 인가는 A1원자(9)의 증착속도를 떨어뜨리는 결과를 초래하는 문제점이 있기 때문에 증착속도에 따라, 다음 식으로 표시되는 주기로 바이어스 전압을 인가한다. 주기 t는However, since the continuous application of the bias voltage to the substrate 8 causes a problem of lowering the deposition rate of the A1 atom 9, the bias voltage is applied at a cycle represented by the following equation according to the deposition rate. Cycle t

Figure kpo00002
Figure kpo00002

여기서 α는 비례계수, Vs는 기판 바이어스 전압, Vt는 타겟에 인가되는 전압, V는 증착속도이다.Where α is the proportional coefficient, Vs is the substrate bias voltage, Vt is the voltage applied to the target, and V is the deposition rate.

이와 같은 본 발명의 작용은 다음과 같다. 즉, 본 발명에 의한 제조방법에 의하여 A1박막을 형성시키는 경우 제 2 도에 도시된 바와 같이 Ar기체가 스퍼터 작용을 함과 동시에 결합력이 약한 A1원자(9)를 제거하는, 에칭(Etching) 작용을 병행하게 되어 표면 마이그레이션(Migration)을 향상시킨 치밀한 조직의 A1박막을 얻는다.Such action of the present invention is as follows. That is, in the case of forming the A1 thin film by the manufacturing method according to the present invention, as shown in FIG. 2, the Ar gas serves to sputter and remove the A1 atom 9 having weak bonding force. In parallel, A1 thin film of dense tissue with improved surface migration is obtained.

이상과 같은 본 발명의 효과로는 스퍼터링시 DC전원을 이용하여, 기판에 바이어스 전압을 인가하므로써 약하게 결합된 A1원자들을 에칭시켜 치밀한 조직의 A1박막을 얻을 수 있다는 잇점이 있다.The effects of the present invention as described above have the advantage that a thin A1 thin film can be obtained by etching a weakly bonded A1 atoms by applying a bias voltage to the substrate using a DC power supply during sputtering.

Claims (1)

RF전원과 정합회로 및 진공조로 이루어지고 상기 진공조내의 기판에 전압 가변용 DC전원(3)을 연결하고 스퍼터링시에 일정한 진공조 조건하에서 상기 DC전원을 이용하여 일정크기의 바이어스 전압을 일정주기로 기판(8)에 인가하도록 된 AC형 스퍼터링 장치에 있어서, 상기 기판(8)에 인가되는 전압의 크기는 -20∼-30V이고, 상기 바이어스 전압의 인가주기 t는The circuit consists of an RF power source, a matching circuit, and a vacuum chamber, and connects a voltage variable DC power source 3 to the substrate in the vacuum chamber, and uses a DC power supply under constant vacuum chamber conditions at the time of sputtering. In the AC type sputtering apparatus to be applied to (8), the magnitude of the voltage applied to the substrate 8 is -20 to -30V, and the application period t of the bias voltage is
Figure kpo00003
Figure kpo00003
 (여기서 α는 비례계수, Vs는 기판에 인가되는 바이어스 전압, Vt는 타겟에 인가되는 전압, V는 증착속도)인 것을 특징으로 하는 A1박막의 제조방법.(Where α is a proportional coefficient, Vs is a bias voltage applied to the substrate, Vt is a voltage applied to the target, and V is a deposition rate).
KR1019880017531A 1988-12-26 1988-12-26 Aluminum film depositing method and apparatus KR950000855B1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100813564B1 (en) * 2006-09-11 2008-03-17 배상열 Continuous bias voltage variable type thinfilm deposition method and apparatus thereof
WO2009048189A1 (en) * 2007-10-10 2009-04-16 Intelligent System Inc. Voltage variable type thinfilm deposition method and apparatus thereof
WO2009066810A1 (en) * 2007-11-20 2009-05-28 Intelligent System Inc. Method and apparatus for deposition of diffusion thin film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100813564B1 (en) * 2006-09-11 2008-03-17 배상열 Continuous bias voltage variable type thinfilm deposition method and apparatus thereof
WO2009048189A1 (en) * 2007-10-10 2009-04-16 Intelligent System Inc. Voltage variable type thinfilm deposition method and apparatus thereof
WO2009066810A1 (en) * 2007-11-20 2009-05-28 Intelligent System Inc. Method and apparatus for deposition of diffusion thin film

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