KR940011122U - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
KR940011122U
KR940011122U KR2019920018806U KR920018806U KR940011122U KR 940011122 U KR940011122 U KR 940011122U KR 2019920018806 U KR2019920018806 U KR 2019920018806U KR 920018806 U KR920018806 U KR 920018806U KR 940011122 U KR940011122 U KR 940011122U
Authority
KR
South Korea
Prior art keywords
thin film
film transistor
transistor
thin
film
Prior art date
Application number
KR2019920018806U
Other languages
Korean (ko)
Other versions
KR0127333Y1 (en
Inventor
오창호
Original Assignee
엘지전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지전자주식회사 filed Critical 엘지전자주식회사
Priority to KR2019920018806U priority Critical patent/KR0127333Y1/en
Publication of KR940011122U publication Critical patent/KR940011122U/en
Application granted granted Critical
Publication of KR0127333Y1 publication Critical patent/KR0127333Y1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
KR2019920018806U 1992-10-01 1992-10-01 Thin film transistor KR0127333Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019920018806U KR0127333Y1 (en) 1992-10-01 1992-10-01 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019920018806U KR0127333Y1 (en) 1992-10-01 1992-10-01 Thin film transistor

Publications (2)

Publication Number Publication Date
KR940011122U true KR940011122U (en) 1994-05-27
KR0127333Y1 KR0127333Y1 (en) 1999-04-15

Family

ID=19341084

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019920018806U KR0127333Y1 (en) 1992-10-01 1992-10-01 Thin film transistor

Country Status (1)

Country Link
KR (1) KR0127333Y1 (en)

Also Published As

Publication number Publication date
KR0127333Y1 (en) 1999-04-15

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