KR940010508A - Voltage generator of semiconductor memory - Google Patents

Voltage generator of semiconductor memory Download PDF

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Publication number
KR940010508A
KR940010508A KR1019920020145A KR920020145A KR940010508A KR 940010508 A KR940010508 A KR 940010508A KR 1019920020145 A KR1019920020145 A KR 1019920020145A KR 920020145 A KR920020145 A KR 920020145A KR 940010508 A KR940010508 A KR 940010508A
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KR
South Korea
Prior art keywords
reference voltage
voltage generator
semiconductor memory
current driving
driving capability
Prior art date
Application number
KR1019920020145A
Other languages
Korean (ko)
Other versions
KR950007445B1 (en
Inventor
김영희
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019920020145A priority Critical patent/KR950007445B1/en
Publication of KR940010508A publication Critical patent/KR940010508A/en
Application granted granted Critical
Publication of KR950007445B1 publication Critical patent/KR950007445B1/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

본발명은 반도체 메모리 디바이스에서 사용하기 위한 저전력 소비형 기준전압 발생기에 관한 것으로서, 본발명의 기준전압 발생기는 전류구동능력이 비교적 작은 제1기준전압 발생기(10)와, 전류구동능력이 큰 제2기준전압발생기(20)를 구비하여, 스탠바이시에는 제1기준전압 발생기(10)만 작동되고, 액티브시에는 제1 및 제2기준전압발생기(10 및 20) 모두가 작동되도록 구성되어 있다.The present invention relates to a low power consumption type reference voltage generator for use in a semiconductor memory device, wherein the reference voltage generator of the present invention includes a first reference voltage generator 10 having a relatively small current driving capability, and a second having a large current driving capability. The reference voltage generator 20 is configured such that only the first reference voltage generator 10 is operated during standby, and both the first and second reference voltage generators 10 and 20 are activated during standby.

Description

반도체 메모리의 기준전압 발생기Voltage generator of semiconductor memory

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본발명의 기준전압 발생기의 등가회로도,2 is an equivalent circuit diagram of a reference voltage generator of the present invention;

제3도는 본발명에 따른 기준전압 발생기의 회로도,3 is a circuit diagram of a reference voltage generator according to the present invention,

제4도는 제3도 회로의 타이밍도.4 is a timing diagram of a circuit of FIG.

Claims (3)

전류구동 능력이 비교적 작은 제1기준전압 발생기(10)와, 액티브 상태에서의 노이즈를 억제할 수 있을 정도로 전류구동능력이 큰 제2기준전압 발생기(20)를 구비하며, 스탠바이시에는 상기 제1기준전압 발생기(10)만 작동되고, 액티브시에는 상기 제1 및 제2기준전압 발생기(10 및 20) 모두가 작동되도록 구성된 반도체 메모리의 기준전압 발생기.And a first reference voltage generator 10 having a relatively small current driving capability, and a second reference voltage generator 20 having a large current driving capability so as to suppress noise in an active state. A reference voltage generator of a semiconductor memory configured to operate only a reference voltage generator (10) and to activate both the first and second reference voltage generators (10 and 20) when active. 제1항에 있어서, 상기 제2기준전압 발생기(20)는, 스탠바이시에는 오프되고 액티브시에는 온되는 스위치 역할을 하는 트랜지스터(PS1, NS2)를 구비하는 반도체 메모리의 기준전압 발생기.2. The reference voltage generator of claim 1, wherein the second reference voltage generator (20) includes transistors (PS1, NS2) which serve as switches that are turned off during standby and turned on when active. 제2항에 있어서, 상기 스위치 역할을 하는 트랜지스터(PS1, NS2)는신호를 일정시간 지연시킨신호를 이용하여 온 · 오프되도록 구성된 반도체 메모리의 기준전압발생기.3. The transistors PS1 and NS2 of claim 2, wherein the transistors PS1 and NS2 act as switches. Delayed signal A reference voltage generator of a semiconductor memory configured to be turned on and off using a signal. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920020145A 1992-10-30 1992-10-30 Refference voltage of semiconductor memory KR950007445B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920020145A KR950007445B1 (en) 1992-10-30 1992-10-30 Refference voltage of semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920020145A KR950007445B1 (en) 1992-10-30 1992-10-30 Refference voltage of semiconductor memory

Publications (2)

Publication Number Publication Date
KR940010508A true KR940010508A (en) 1994-05-26
KR950007445B1 KR950007445B1 (en) 1995-07-11

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ID=19342081

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920020145A KR950007445B1 (en) 1992-10-30 1992-10-30 Refference voltage of semiconductor memory

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KR (1) KR950007445B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8698553B2 (en) 2012-05-09 2014-04-15 SK Hynix Inc. Internal voltage generating circuit
US9401204B2 (en) 2013-02-28 2016-07-26 SK Hynix Inc. Electronic device and method for operating electronic device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8698553B2 (en) 2012-05-09 2014-04-15 SK Hynix Inc. Internal voltage generating circuit
US9401204B2 (en) 2013-02-28 2016-07-26 SK Hynix Inc. Electronic device and method for operating electronic device
US9865344B2 (en) 2013-02-28 2018-01-09 SK Hynix Inc. Electronic device and method for operating electronic device

Also Published As

Publication number Publication date
KR950007445B1 (en) 1995-07-11

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