KR940009752A - How to make halftone blank mask - Google Patents

How to make halftone blank mask Download PDF

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Publication number
KR940009752A
KR940009752A KR1019920018292A KR920018292A KR940009752A KR 940009752 A KR940009752 A KR 940009752A KR 1019920018292 A KR1019920018292 A KR 1019920018292A KR 920018292 A KR920018292 A KR 920018292A KR 940009752 A KR940009752 A KR 940009752A
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KR
South Korea
Prior art keywords
layer
light shielding
mask
shielding layer
manufacturing
Prior art date
Application number
KR1019920018292A
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Korean (ko)
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KR950004966B1 (en
Inventor
한우석
Original Assignee
문정환
금성일렉트론 주식회사
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Priority to KR1019920018292A priority Critical patent/KR950004966B1/en
Publication of KR940009752A publication Critical patent/KR940009752A/en
Application granted granted Critical
Publication of KR950004966B1 publication Critical patent/KR950004966B1/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Abstract

하프톤효과를 얻기 위해여 차광층에 다수의 미세구멍을 형성시킨 하프톤 블랭크마스크를 제작하는 방법에 있어서, 유리재질로된 마스크 기판위에 차광층으로 크롬막을 형성하고, 크롬막 상부에 플리실리콘을 도포하고, 도포된 플리실리콘을 N2분위기에서 575℃정도의 온도하에서 30분정도 열처리하여 많은 요철부를 가진 반구형결정층을 성장시키고, 반구형결정층을 비등방성 식각하여 반구형결정층 요부들 하부의 크롬층이 노출되도록 하고, 철부들만 남은 반구형결정층을 마스크층으로 하여 크롬층을 비등방성식각하여 하부의 크롬층에 미세한 구멍들을 형성하는 단계들로 이루어지는 하프톤블랭크마스크 제작방법이다.In the method of manufacturing a halftone blank mask in which a plurality of fine holes are formed in a light shielding layer to obtain a halftone effect, a chromium film is formed as a light shielding layer on a mask substrate made of glass material, and polysilicon is formed on the chromium film. The coated polysilicon was heat-treated for 30 minutes at a temperature of about 575 ° C. in an N 2 atmosphere to grow a hemispherical crystal layer having many irregularities, and anisotropically etch the hemispherical crystal layer to form chromium under the hemispherical crystal layer recesses. The half-tone blank mask manufacturing method includes the steps of exposing the layer, and forming the fine pores in the lower chromium layer by anisotropically etching the chromium layer using the hemispherical crystal layer remaining only in the iron parts as a mask layer.

Description

하프톤 블랭크마스크 제작방법How to make halftone blank mask

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 하프톤블랭크마스크 제작방법을 설명하기 위한 부분단면도.Figure 2 is a partial cross-sectional view for explaining a halftone blank mask manufacturing method of the present invention.

Claims (5)

해상력을 높이기 위하여 차광층에 다수의 미세구멍을 형성시킨 하프톤브랭크마스크를 제작하는 방법에 있어서, 마스크 기판위에 차광층을 형성하고, 상기 차광층 상부에 많은 요철부를 가진 반구형결정층을 형성하고, 상기 반구형결정층의 요부를 비등방성식각하여 상기 반구형결정층의 요부하부에 있는 차광층일부분을 노출되게 하고, 남은 첨부들로 된 반구형결정층을 마스크층으로 하여 노출된 차광층 일부를 시각하여 차광층에 미세한 구멍들을 형성하는 단계를 포함하며 이루어지는 하프톤브랭크마스크 제작방법.In the method for manufacturing a halftone blank mask having a plurality of fine holes formed in the light shielding layer in order to increase the resolution, a light shielding layer is formed on the mask substrate, a hemispherical crystal layer having a large number of irregularities on the light shielding layer, Anisotropically etch the recesses of the hemispherical crystal layer to expose a portion of the light shielding layer under the recessed portion of the hemispherical crystal layer, and then partially shield the visible light shielding layer using the remaining hemispherical crystal layer as a mask layer. A method of manufacturing a halftone blank mask comprising forming fine holes in a layer. 제1항에 있어서, 상기 차광층은 크롬층인 것이 특징인 하프톤브랭크마스크 제작방법.The method of claim 1, wherein the light blocking layer is a chromium layer. 제1, 혹은 제2항에 있어서, 상기 반구형결정층은 차광층상부에 폴리실리콘을 도포하고, 도포된 폴리실리콘을 N2분위기에서 575℃정도의 온도하에서 30분 정도 폴리실리콘을 N2분위기에서 575℃ 정도의 온도하에서 30분정도 열처리하여서 형성하는 것이 특징인 하프톤브랭크마스크 제작방법.The first, or according to claim 2, wherein the semi-spherical crystal layer is applied to the polysilicon to the upper light-shielding layer, and a coating of polysilicon for 30 minutes polysilicon at a temperature of about 575 ℃ in N 2 atmosphere N 2 atmosphere Halftone blank mask manufacturing method characterized in that formed by heat treatment for about 30 minutes at a temperature of about 575 ℃. 제3항에 있어서, 상기 폴리실리콘층은 500 내지 1000 옹그스트롬의 두께를 가지는 것이 특징인 하프톤브랭크마스크 제작방법.The method of claim 3, wherein the polysilicon layer has a thickness of 500 to 1000 Angstroms. 해상력을 높이기 위하여 차광층에 다수의 미세구멍을 형성시킨 마스크를 제작하는 방법에 있어서, 상기 제1,2,4 혹은 5항의 특징인 하프톤브랭크마스크 차광층에 사진식각공정으로 소정의 패턴을 형성하는 단계를 추가로 구비하여 이루어지는 마스크 제작방법.In the method of manufacturing a mask having a plurality of fine holes formed in the light shielding layer in order to increase the resolution, a predetermined pattern is formed on the halftone blank mask light shielding layer as described in the first, second, fourth or fifth aspect by a photolithography process. Mask manufacturing method comprising the step of further comprising. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920018292A 1992-10-07 1992-10-07 Process for making half tone blank mask KR950004966B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920018292A KR950004966B1 (en) 1992-10-07 1992-10-07 Process for making half tone blank mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920018292A KR950004966B1 (en) 1992-10-07 1992-10-07 Process for making half tone blank mask

Publications (2)

Publication Number Publication Date
KR940009752A true KR940009752A (en) 1994-05-24
KR950004966B1 KR950004966B1 (en) 1995-05-16

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Application Number Title Priority Date Filing Date
KR1019920018292A KR950004966B1 (en) 1992-10-07 1992-10-07 Process for making half tone blank mask

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7704646B2 (en) 2004-11-08 2010-04-27 Lg Innotek Co., Ltd. Half tone mask and method for fabricating the same

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