KR940004900A - Semiconductor laser manufacturing method - Google Patents

Semiconductor laser manufacturing method Download PDF

Info

Publication number
KR940004900A
KR940004900A KR1019920015074A KR920015074A KR940004900A KR 940004900 A KR940004900 A KR 940004900A KR 1019920015074 A KR1019920015074 A KR 1019920015074A KR 920015074 A KR920015074 A KR 920015074A KR 940004900 A KR940004900 A KR 940004900A
Authority
KR
South Korea
Prior art keywords
layer
growth
current limiting
semiconductor laser
limiting layer
Prior art date
Application number
KR1019920015074A
Other languages
Korean (ko)
Inventor
시상기
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019920015074A priority Critical patent/KR940004900A/en
Publication of KR940004900A publication Critical patent/KR940004900A/en

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

본 발명은 반도체 레이저 제조방법에 관한 것으로, 종래에는 전류제한층 성장 후 화학적 에칭으로 그 전류제한층을 패턴구조로 제조하여 2차성장시 산화 및 계면에서의 결함이 발생하여 소자의 특성을 저하시키는 문제점이 있었다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor laser. In the related art, the current limiting layer is manufactured in a pattern structure by chemical etching after the growth of the current limiting layer. There was a problem.

본 발명은 상기와 같은 종래의 문제점을 감안하여 성장방지층을 성장 후 패턴을 형성하여 선택적 에피택시 방법으로 전류제한층을 형성한 후 상기 성장방지층을 제거하여 2차성장시에 발생하는 산화문제와 계면사이에서의 결함을 방지하여 소자의 특성을 개선하는 효과가 있다.In view of the above-described conventional problems, the present invention provides a pattern after the growth prevention layer is grown to form a current limiting layer by a selective epitaxy method, and then removes the growth prevention layer and interfaces with oxidation occurring during secondary growth. There is an effect of improving the characteristics of the device by preventing defects therebetween.

Description

반도체 레이저 제조방법Semiconductor laser manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도의 (가) 내지 (마)는 본 발명의 반도체 레이저 제조공정을 보인 단면도.2A to 2E are cross-sectional views showing a semiconductor laser manufacturing process of the present invention.

Claims (3)

기판(1)위에 버퍼층(11), 클래드층(2), 활성층(3), 클래드층(4)과 산화방지층(5) 및 성장방지층(7)을 연속 성장 후 상기 성장방지층(7)을 패턴구조로 형성한 다음 상기 산화방지층(5) 위에 전류제한층(8)을 선택적 에피택시 성장법으로 성장시킨 후 그 성장방지층(8)을 선택적 에피택시 성장법으로 성장시킨 후 그 성장방지층(7)을 제거하고 클래드층(10) 캡층(9)을 연속성장시킨 후 그 캡층(9)과 기판(1)에 전극(12)(12′)을 형성하여 제조하는 반도체 레이저 제조방법.After growth of the buffer layer 11, the cladding layer 2, the active layer 3, the cladding layer 4, the antioxidant layer 5 and the growth prevention layer 7 on the substrate 1, the growth prevention layer 7 is patterned After forming the structure, the current limiting layer 8 is grown on the antioxidant layer 5 by the selective epitaxy growth method, and the growth prevention layer 8 is grown by the selective epitaxy growth method, and then the growth prevention layer 7 is formed. Removing and removing the clad layer (10) and cap layer (9) continuously and forming electrodes (12) (12 ') on the cap layer (9) and the substrate (1). 제1항에 있어서, 성장방지층(7)은 AlN으로 제조하는 반도체 레이저 제조방법.The method of claim 1, wherein the growth preventing layer (7) is made of AlN. 제1항에 있어서, 성장방지층(7)은 절연막으로 제조하는 반도체 레이저 제조방법.A method according to claim 1, wherein the growth preventing layer (7) is made of an insulating film.
KR1019920015074A 1992-08-21 1992-08-21 Semiconductor laser manufacturing method KR940004900A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920015074A KR940004900A (en) 1992-08-21 1992-08-21 Semiconductor laser manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920015074A KR940004900A (en) 1992-08-21 1992-08-21 Semiconductor laser manufacturing method

Publications (1)

Publication Number Publication Date
KR940004900A true KR940004900A (en) 1994-03-16

Family

ID=67147946

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920015074A KR940004900A (en) 1992-08-21 1992-08-21 Semiconductor laser manufacturing method

Country Status (1)

Country Link
KR (1) KR940004900A (en)

Similar Documents

Publication Publication Date Title
KR940004900A (en) Semiconductor laser manufacturing method
KR950012833A (en) Semiconductor laser diode manufacturing method
KR880008479A (en) Manufacturing method of semiconductor laser device
KR930018790A (en) Semiconductor laser fabrication method
KR940008178A (en) Embedded semiconductor laser diode
KR970018882A (en) Semiconductor laser diode and manufacturing method thereof
KR950012902A (en) Semiconductor laser diode and manufacturing method thereof
KR920019023A (en) Manufacturing method of semiconductor laser diode
KR930018794A (en) Visible light semiconductor laser manufacturing method
KR930020786A (en) Laser diode and manufacturing method
KR930011347A (en) Manufacturing method of laser diode
KR950012652A (en) Selective investment ridge semiconductor laser diode and manufacturing method thereof
KR950012835A (en) Laser diode and manufacturing method thereof
KR920019026A (en) Laser diode manufacturing method
JPH05275356A (en) Mask for selective growth of group iii-v compound semiconductor film and group iii-v compound semiconductor film selective growth method using this
KR940020627A (en) Semiconductor laser diode and manufacturing method thereof
KR940001501A (en) Semiconductor laser diode and manufacturing method
JPH05347457A (en) Manufacture of semiconductor device
KR940001500A (en) Semiconductor laser diode manufacturing method
KR940010428A (en) Semiconductor laser diode manufacturing method
KR930015222A (en) Semiconductor laser diode and manufacturing method thereof
KR940017026A (en) Laser diode manufacturing method
KR930005298A (en) Manufacturing method of semiconductor laser diode
JPH0282679A (en) Manufacture of semiconductor light emitting device
KR950012919A (en) Laser Diode and Manufacturing Method

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination