KR940004900A - Semiconductor laser manufacturing method - Google Patents
Semiconductor laser manufacturing method Download PDFInfo
- Publication number
- KR940004900A KR940004900A KR1019920015074A KR920015074A KR940004900A KR 940004900 A KR940004900 A KR 940004900A KR 1019920015074 A KR1019920015074 A KR 1019920015074A KR 920015074 A KR920015074 A KR 920015074A KR 940004900 A KR940004900 A KR 940004900A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- growth
- current limiting
- semiconductor laser
- limiting layer
- Prior art date
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- Semiconductor Lasers (AREA)
Abstract
본 발명은 반도체 레이저 제조방법에 관한 것으로, 종래에는 전류제한층 성장 후 화학적 에칭으로 그 전류제한층을 패턴구조로 제조하여 2차성장시 산화 및 계면에서의 결함이 발생하여 소자의 특성을 저하시키는 문제점이 있었다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor laser. In the related art, the current limiting layer is manufactured in a pattern structure by chemical etching after the growth of the current limiting layer. There was a problem.
본 발명은 상기와 같은 종래의 문제점을 감안하여 성장방지층을 성장 후 패턴을 형성하여 선택적 에피택시 방법으로 전류제한층을 형성한 후 상기 성장방지층을 제거하여 2차성장시에 발생하는 산화문제와 계면사이에서의 결함을 방지하여 소자의 특성을 개선하는 효과가 있다.In view of the above-described conventional problems, the present invention provides a pattern after the growth prevention layer is grown to form a current limiting layer by a selective epitaxy method, and then removes the growth prevention layer and interfaces with oxidation occurring during secondary growth. There is an effect of improving the characteristics of the device by preventing defects therebetween.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도의 (가) 내지 (마)는 본 발명의 반도체 레이저 제조공정을 보인 단면도.2A to 2E are cross-sectional views showing a semiconductor laser manufacturing process of the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920015074A KR940004900A (en) | 1992-08-21 | 1992-08-21 | Semiconductor laser manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920015074A KR940004900A (en) | 1992-08-21 | 1992-08-21 | Semiconductor laser manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR940004900A true KR940004900A (en) | 1994-03-16 |
Family
ID=67147946
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920015074A KR940004900A (en) | 1992-08-21 | 1992-08-21 | Semiconductor laser manufacturing method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR940004900A (en) |
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1992
- 1992-08-21 KR KR1019920015074A patent/KR940004900A/en not_active Application Discontinuation
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Legal Events
Date | Code | Title | Description |
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WITN | Withdrawal due to no request for examination |