KR930022643A - Structure of laser diode - Google Patents

Structure of laser diode Download PDF

Info

Publication number
KR930022643A
KR930022643A KR1019920005612A KR920005612A KR930022643A KR 930022643 A KR930022643 A KR 930022643A KR 1019920005612 A KR1019920005612 A KR 1019920005612A KR 920005612 A KR920005612 A KR 920005612A KR 930022643 A KR930022643 A KR 930022643A
Authority
KR
South Korea
Prior art keywords
quantum well
laser diode
present
drain
source
Prior art date
Application number
KR1019920005612A
Other languages
Korean (ko)
Other versions
KR940011273B1 (en
Inventor
안도열
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019920005612A priority Critical patent/KR940011273B1/en
Publication of KR930022643A publication Critical patent/KR930022643A/en
Application granted granted Critical
Publication of KR940011273B1 publication Critical patent/KR940011273B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발며은 결합 양자 우물을 이용한 전계효과 반도체 레이저의 광이득 직접 변조를 기반 기술로 하여 결합 양자 우물을 활성층으로 해서 저전압에서도 초고속 변조할수 있도록 한 레이저 다디오드의 구조에 관한 것으로, 종래에는 발진을 만족시키기 위한 전자와 정공의 수면이 나노초 정도이기 때문에 초고속 변조를 할수없는 결점이 있었으나, 본발명에서는 소오스(3)와 드레인(4)사이에 전계를 인가하기 위한 게이트(6)를 형성시켜 상기 결점을 개선시킬수 있는 것이다.The present invention relates to a structure of a laser diode that enables high-speed modulation even at low voltages using a coupled quantum well as an active layer based on the optical gain direct modulation of a field effect semiconductor laser using a coupled quantum well. Although the surface of the electrons and holes to be made is about nanoseconds, there was a drawback of not being able to perform ultrafast modulation. However, in the present invention, the gate 6 for applying an electric field is formed between the source 3 and the drain 4. It can be improved.

Description

레이저 다이오드의 구조Structure of laser diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 졸래의 트랜스버스 접합 레이저 다이오드를 나타낸 단면도.1 is a cross-sectional view showing a transverse junction laser diode in a single phase.

제2도는 본발명의 전계효과 양자우물 에이저 다이오드를 나타낸 단면도.Figure 2 is a cross-sectional view showing a field effect quantum well diode of the present invention.

제3도는 본발명 단일 양자 우물에서의 전계영향에 따른 전자와 정공의 확률밀도 함수를 나타낸 그래프.3 is a graph showing the probability density function of electrons and holes according to the electric field effect in the single quantum well of the present invention.

제4도는 본발명 결합양자 우물에서의 전계영향에 따른 전자와 정공의 확률 밀도 함수를 나타낸 그래프.4 is a graph showing the probability density function of electrons and holes according to the electric field effect in the combined quantum well of the present invention.

제5도는 본발명의 활성층으로 단일 양자 우물과 결합양자 우물에 따른 게이트 전계에 의한 광이득의 변화를 나타낸 그래프.5 is a graph showing a change in light gain due to a gate electric field according to a single quantum well and a coupled quantum well as an active layer of the present invention.

Claims (1)

기판(1)위에 금속층(2)이 형성되고 상기 금속층(2)상부에 소오스(3)및 드레인(4)이 형성되며, 상기 소오스(3)와 드레인(4)사이 금속층(2)영역에 결합 양자우물로된 활성층(5)이 형성되고 상기 소오스(3)와 드레인(4)사이 금속층(2)표면에 전계를 인가하기 위한 게이트(6)가 형성되어 이루어진 레이저 다이오드의 구조.A metal layer 2 is formed on the substrate 1, and a source 3 and a drain 4 are formed on the metal layer 2, and bonded to the metal layer 2 region between the source 3 and the drain 4. A structure of a laser diode in which an active layer (5) made of a quantum well is formed and a gate (6) for applying an electric field is formed on the surface of the metal layer (2) between the source (3) and the drain (4). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920005612A 1992-04-03 1992-04-03 Structure of laser diode KR940011273B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019920005612A KR940011273B1 (en) 1992-04-03 1992-04-03 Structure of laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920005612A KR940011273B1 (en) 1992-04-03 1992-04-03 Structure of laser diode

Publications (2)

Publication Number Publication Date
KR930022643A true KR930022643A (en) 1993-11-24
KR940011273B1 KR940011273B1 (en) 1994-12-03

Family

ID=19331365

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920005612A KR940011273B1 (en) 1992-04-03 1992-04-03 Structure of laser diode

Country Status (1)

Country Link
KR (1) KR940011273B1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890011151A (en) * 1987-12-07 1989-08-12 강진구 Manufacturing method of laser diode
US4926432A (en) * 1988-08-18 1990-05-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890011151A (en) * 1987-12-07 1989-08-12 강진구 Manufacturing method of laser diode
US4926432A (en) * 1988-08-18 1990-05-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device

Also Published As

Publication number Publication date
KR940011273B1 (en) 1994-12-03

Similar Documents

Publication Publication Date Title
US3465159A (en) Light amplifying device
ES2047028T3 (en) SEMICONDUCTOR LASERS STRUCTURES.
FR2426992A1 (en) SEMICONDUCTOR LASER AND MANUFACTURING OF THIS LASER
KR900005656A (en) Semiconductor laser device
KR920005395A (en) Photoelectric
KR860006851A (en) Semiconductor laser
KR930022643A (en) Structure of laser diode
KR940027201A (en) Optoelectronic integrated circuit
KR870700147A (en) Nonlinear and Bistable Optics
KR930024241A (en) Semiconductor laser device and manufacturing method thereof
KR970013538A (en) Semiconductor laser diode
KR970077844A (en) Ridge-type semiconductor laser diode
KR850006797A (en) Semiconductor laser
KR920011003A (en) Compound semiconductor laser
KR950002142A (en) Laser diode
KR970054991A (en) High power laser diode
KR960039510A (en) Semiconductor laser
KR970054987A (en) Semiconductor laser
KR950010213A (en) Semiconductor laser diode
KR890011151A (en) Manufacturing method of laser diode
KR970008750A (en) Blue semiconductor laser diode
DE3786750D1 (en) OPTICAL WAVE LADDER SWITCH WITH A STRIP WAVE LADDER, WHICH IS SWITCHED BY INJECTION OF CARRIERS.
JPS6139754B2 (en)
JPS61270878A (en) Photo semiconductor device
KR950012889A (en) Semiconductor laser array

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20031008

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee