KR930020608A

KR930020608A - Plasma generating method and apparatus

Info

Publication number: KR930020608A
Application number: KR1019930005042A
Authority: KR
Inventors: 미쯔히로 오오쿠니; 토쿠히코 타마키; 마사후미 쿠보타; 노보루 노무라; 켄지 하라후지; 이찌로 나카야마
Original assignee: 모리시타 요이찌; 마쯔시다덴기산교 가부시기가이샤
Priority date: 1992-03-31
Filing date: 1993-03-30
Publication date: 1993-10-20
Also published as: KR970010266B1

Abstract

본 발명은, 고진공하에서 고밀도이고 또한 균일성에 뛰어난 플라즈마를 발생시킬수 있는 플라즈마발생방법과 그 장치에 관한 것으로서 그 구성에 있어서, 플라즈마발생부르 가진 진공실과, 상기 플라즈마발생부의 측방에 배설된 동일한 높이를 가진 3개이상의 측방전극과, 상기 플라즈마발생부의 하부에 설치된 시료대와, 상기 3개 이상의 측방전극에 주파수가 동일하고 위상이 순차적으로 다른 고주파전력을 인가하므로서 상기플라즈마발생부에 이 플라즈마발생부의 전자에 회전운동을 시키는 회전전장을 여기하는 전장여기수단을 구비하고 있다. 상기 3개이상의 측방전극은 서로 동일한 높이의 위치가 되도록 배치되어 있다. 상기 시료대는 그 상부면이 상기 3개 이상의 측방전극의 하단부와 동일한 높이의 위치가 되도록 배치되어 있는 것을 특징으로 한것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma generating method and apparatus capable of generating a high density and excellent uniformity of plasma under high vacuum. Three or more side electrodes, a sample stage provided below the plasma generator, and three or more side electrodes are applied with high frequency power having the same frequency and different phases in sequence to the electrons of the plasma generator. The electric field excitation means for exciting the electric field for rotating motion is provided. The three or more side electrodes are arranged to be at the same height as each other. The sample stage is characterized in that the upper surface is arranged so that the position of the same height as the lower end of the three or more side electrodes.

Description

Plasma generating method and apparatus

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는, 본 발명의 제1실시예에 관한 플라즈마 발생방법이 적용된 드라이에칭 장치의 구조를 표시한 모식도.1 is a schematic diagram showing the structure of a dry etching apparatus to which the plasma generating method according to the first embodiment of the present invention is applied.

제2도는(a) 및 (b)는, 상기 제1실시예가 적용된 드라이에칭장치의 요부의 개략구조를 표시하고 있으며, (a)는 평면도이다, (b)는 측면도.2 (a) and 2 (b) show a schematic structure of the main part of the dry etching apparatus to which the first embodiment is applied, (a) is a plan view, and (b) is a side view.

제3도(a) 및 (b)는, 상기 드라이에칭장칭 있어서, 측방 전극의 폭과 측방전극끼리의 간격과의 대소관계를 표시한 도면, 제3도(c) 및 (d)는, 상기 드라이에칭장치에 있어서, 측방전극의 폭과 측방전극의 폭과 측방전극끼리의 간격과의 대소관계와, 플라즈마 밀도와의 관계를 표시한 도면으로서, 제3도(c)는 제3(a)의 A-A'선에 있어서의 플라즈마 밀도를 표시하고, 제3도(b)의 B-B'선에 있어서의 플라즈마 밀도를 표시.3 (a) and 3 (b) show the magnitude relationship between the width of the side electrodes and the distance between the side electrodes in the dry etching, and FIGS. 3 (c) and (d) show the In the dry etching apparatus, the magnitude relationship between the width of the side electrodes, the width of the side electrodes, and the intervals between the side electrodes, and the relationship between the plasma density are shown. FIG. The plasma density in the A-A 'line of FIG. 3 is shown, and the plasma density in the B-B' line of FIG.3 (b).

제4도 (a) 및 (b)는, 상기 드라이에칭장치에 있어서, 플라즈마 발생부에 있어서의 상하방향의 위치와 플라즈마 밀도와의 관계로 표시하고 있으며, 제4도 (b)는, 제4도(a)의 P-Q선에 있어서의 플라즈마 밀도를 표시한다.4A and 4B show the relationship between the up-down position and the plasma density in the plasma generating unit in the dry etching apparatus, and FIG. 4B is the fourth embodiment. The plasma density in the PQ line of FIG.

Claims

Placing three or more side electrodes having the same height on the side of the plasma generating unit in the vacuum chamber so as to have the same height, and placing a sample stage under the plasma generating unit with the upper surface of the lower end of the three or more side electrodes. And a rotating magnetic field for rotating the electrons in the plasma generating part by applying high frequency power having the same frequency and different phases to the three or more lateral electrodes sequentially. Excitation and thereby generating a high density and uniform plasma in said plasma generating portion.

The plasma generating method according to claim 1, comprising applying a bias current to the sample stage and irradiating the plasma generated in the plasma generating portion to the sample placed on the sample stage.

The plasma generating method according to claim 1, further comprising a step of disposing a ground electrode at a position equidistant from the three or more lateral electrodes in the plasma generating unit.

The plasma generating method according to claim 1, further comprising a step of confining electrons in the plasma generating portion to the plasma generating portion by applying a magnetic field in a direction perpendicular to the working surface of the rotating electric field.

Arranging three or more lateral electrodes having equal widths on the side of the plasma generating unit in the vacuum chamber at equal intervals and having a spacing smaller than the width of the lateral electrodes, and having the same frequency in the three or more side electrodes And exciting a rotating electric field for rotating the electrons in the plasma generating portion in the plasma generating portion by applying a high frequency power having a different phase in sequence, thereby generating a high density and uniform plasma in the plasma generating portion. Plasma generating method comprising a.

The plasma generating method according to claim 5, further comprising irradiating a plasma generated in the plasma generating unit to a sample placed on the sample stage by applying a bias current to the sample stage.

6. The plasma generating method according to claim 5, further comprising a step of disposing a ground electrode at an equidistant position from the three or more lateral electrodes in the plasma generating unit.

6. The plasma generating method according to claim 5, further comprising a step of confining electrons in the plasma generating portion to the plasma generating portion by applying a magnetic field in a direction perpendicular to the working surface of the rotating electric field.

A vacuum chamber having a plasma generating portion, three or more side electrodes having the same height disposed laterally in the plasma generating portion, a sample table provided below the plasma generating portion, and the three or more side electrodes having the same frequency and phase. The electric field excitation means for exciting a rotating electric field for rotating the electrons of the plasma generating part is applied to the plasma generating part by applying different high frequency powers sequentially so that the three or more lateral electrodes are positioned at the same height. And the sample stage is arranged such that its upper surface is positioned at the same height as the lower ends of the three or more side electrodes.

10. The plasma generating apparatus of claim 9, wherein the three or more side electrodes are formed so that a horizontal cross section has an arc shape, and the three or more side electrodes are arranged in a circumferential shape.

The plasma generating apparatus according to claim 9, wherein a bias current for irradiating the plasma generated by the plasma generating unit is applied to the sample placed on the sample stage.

10. The plasma generating apparatus according to claim 9, further comprising a ground electrode provided at a position equidistant from the three or more lateral electrodes in the plasma generating unit.

10. A plasma generating apparatus according to claim 9, further comprising a magnetic field applying means for restraining a magnetic field in a direction perpendicular to the action surface of the rotating electric field.

A vacuum chamber having a plasma generating unit, three or more side electrodes having an equal width disposed on the side of the plasma generating unit inside the vacuum chamber, a sample table provided below the plasma generating unit, and the same frequency in the three or more side electrodes. And an electric field excitation means for exciting the electric field which causes the electrons of the plasma generating part to rotate by applying high frequency power having different phases sequentially. The three or more lateral electrodes are equally spaced from each other. And the interval is smaller than the width of the lateral electrode.

15. The plasma generating apparatus according to claim 14, wherein the three or more side electrodes are formed in a horizontal cross section in an arc shape, and the three or more side electrodes are arranged in a circumferential shape.

The plasma generation apparatus according to claim 14, wherein a bias current for irradiating the plasma generated by the plasma generation unit is applied to the sample stage on which the sample stage is placed.

The plasma generating apparatus according to claim 14, further comprising a ground electrode provided at an equidistant position from the three or more lateral electrodes in the plasma generating unit.

The plasma generating apparatus according to claim 14, further comprising magnetic field applying means for applying a magnetic field in a direction perpendicular to the action surface of the rotating electric field.

※ Note: The disclosure is based on the initial application.