KR930011910B1 - Structure and manufcturing method of electroluminescence - Google Patents
Structure and manufcturing method of electroluminescence Download PDFInfo
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- KR930011910B1 KR930011910B1 KR1019900021358A KR900021358A KR930011910B1 KR 930011910 B1 KR930011910 B1 KR 930011910B1 KR 1019900021358 A KR1019900021358 A KR 1019900021358A KR 900021358 A KR900021358 A KR 900021358A KR 930011910 B1 KR930011910 B1 KR 930011910B1
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- film
- electroluminescent
- photodiode
- pixels
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- 238000005401 electroluminescence Methods 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 title description 7
- 239000011521 glass Substances 0.000 claims abstract description 6
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 150000004767 nitrides Chemical class 0.000 claims abstract description 4
- 238000007743 anodising Methods 0.000 claims abstract 2
- 229910052751 metal Inorganic materials 0.000 claims abstract 2
- 239000002184 metal Substances 0.000 claims abstract 2
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 208000003464 asthenopia Diseases 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
제1도는 종래의 구조단면도.1 is a structural cross-sectional view of the related art.
제2도는 종래의 광센서 설치 상태도.2 is a state diagram of a conventional optical sensor installation.
제3도는 본 발명에 의한 포토다이오드 설치 상태도.3 is a photodiode installation state in accordance with the present invention.
제4도는 본 발명의 구조단면도.4 is a structural cross-sectional view of the present invention.
제5도는 본 발명의 공정단면도.5 is a cross-sectional view of the process of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 글래스기판 2 : MoXTaYNZ막1: Glass substrate 2: Mo X Ta Y N Z film
3 : MoXTaY막 4 : MoXTaY,OZ 3: Mo X Ta Y Membrane 4: Mo X Ta Y , O Z
5 : 형광층 6 : 절연층5: fluorescent layer 6: insulating layer
7 : Cr 막 8 : a-Si 막7: Cr film 8: a-Si film
9 : 투명전극 10 : 배면전극9 transparent electrode 10 back electrode
본 발명은 엘렉트로 루미네센스(Electro luminescence)소자의 구조 및 그 제조 방법에 관한 것으로, 특히 주변의 명암에 따라 콘트라스트(Contrast)를 조절하는데 적당하도록 한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of an electro luminescence device and a method of manufacturing the same, and particularly, to adjust the contrast according to the surrounding light and shade.
통상, 엘렉트로 루미네센스란 형광체 사이에 전계를 가해 빛을 얻는 현상을 말하며 이 현상을 이용한 종래의 소자는 일반적으로 제1도에 나타낸 바와 같이 글래스(Glass) 기판/투명전극/절연층/형광층/절연층/배면전극 순으로 이루어진 적층구조의 것이 사용되었다.In general, electroluminescence refers to a phenomenon in which light is applied by applying an electric field between phosphors, and a conventional device using this phenomenon is generally a glass substrate / transparent electrode / insulation layer / fluorescence as shown in FIG. The laminated structure consisting of layer / insulation layer / back electrode was used.
고휘도의 엘렉트로 루미네센스를 얻기 위해서는 고전계는 106V/Cm 이상의 전압이 요구된다.In order to achieve high luminance electro luminescence, a high electric field requires a voltage of 10 6 V / Cm or more.
따라서, 상기 절연층은 절연내압이 높은 Si계와 Ta계의 산화막이나 질화막 또는 산화질화막이 사용되었으며 주로 스퍼터링(Sputtering)법으로 형성되어 졌다.Therefore, the insulating layer is an oxide film, a nitride film, or an oxynitride film of Si-based and Ta-based dielectric materials having high dielectric breakdown voltage, and is mainly formed by a sputtering method.
또한, 상기 형광층은 II-VI족 화합물인 ZnS가 주로 사용되었고 이것에 Mn을 도핑(Doping)하면 노란색(Yellow)을, TbF3을 도핑하면 녹색(Green)을 얻을 수 있었으며 이외에도 도핑 물질에 따라 청색(Blue) 및 적색(Red)등의 빛을 얻을 수 있었다.In addition, ZnS, a group II-VI compound, was mainly used, and yellow was obtained by doping Mn to this, and green was obtained by doping with TbF 3 . Light such as blue and red could be obtained.
이들중 노란색과 녹색의 경우는 비교적 우수한 휘도(약 2000cd/m2)를 얻을 수 있었으므로 모니터(Monitor)용 소자로 사용되었다.Among them, yellow and green were used as monitor elements because relatively high luminance (about 2000 cd / m 2 ) was obtained.
또한, 이때 필요한 구동한 메카니즘(Mechanism)으로는 전계에 의해 가속된 전자가 발광중심을 여기(Exite)하여 천이할때 빛을 내는 직접 천이 방식과, 전자가 발광중심과 충돌 전자-정공쌍을 생성하고 이들 전자와 정공이 재결합할시 발생하는 비방사적 재결합 에너지에 의해 빛을 에너지 전달여기 방식이 있다.In addition, the driven mechanism required at this time includes a direct transition method in which electrons accelerated by an electric field excite the emission center to emit light, and electrons generate an emission center and a collision electron-hole pair. And the energy is transmitted by the non-radiative recombination energy generated when these electrons and holes recombine.
그러나 종래의 엘렉트로 루미네센스 소자들은 조변의 광세기 및 명암을 센싱(Sensing)하여 적당한 콘트라스트가 되도록 조절하는 포토다이오드와 같은 광센서를 제2도와 같이 외부에 설치하였으므로 정확한 콘트라스트가 이루어지지 않았을 뿐만 아니라 설치 및 조작이 번거러웁게 되는 단점이 있었다.However, the conventional electro luminescence devices have not provided accurate contrast because an optical sensor such as a photodiode is installed externally as shown in FIG. 2 to sense the light intensity and contrast of the control to achieve a suitable contrast. But there was a disadvantage that the installation and operation is cumbersome.
본 발명은 상기 단점을 제거키위한 것으로 이를 위해 엘렉트로 루미네센스 소자의 픽셀(Pixel) 사이에 광센서인 포토다이오드를 상기 픽셀과 소정 비율의 갯수로 설치하여 주변의 광변화에 따라 적당한 빛의 콘트라스트가 이루어지도록 하였다.The present invention is to eliminate the above disadvantages for this purpose by installing a photodiode, a photo sensor, between the pixels of the electro luminescence element (Pixel) with a predetermined number of pixels and a predetermined ratio of the appropriate light according to the ambient light change Contrast was achieved.
제3도는 본 발명에 의한 광센서인 포토다이오드의 설치 상태도를 나타낸 것으로 엘렉트로 루미네센스 소자의 픽셀 사이에 포토다이오드를 1000개의 픽셀당 하나의 비율로 설치한 것이다.3 shows a state diagram of the photodiode as an optical sensor according to the present invention, in which photodiodes are installed at one ratio per 1000 pixels between pixels of an electroluminescent device.
제4도는 본 발명의 구조 단면도로서, 이것의 제조공정을 제5a도 내지 제5h도를 참조하여 상술하면 다음과 같다.4 is a structural cross-sectional view of the present invention, which will be described below with reference to FIGS. 5A to 5H.
먼저 제5a도와 같이 글래스 기판(1)위에 코스퍼터링(Cosputtering)법으로 MoXTaYNZ(2)를 약 500Å의 두께로 증착하고 제5b도와 같이 MoXTaY(3)를(여기서 x와 y의 비율은 10:90으로 한다) 약 4000Å의 두께로 증착한 다음 애노다이징(Anodizing)을 실시하여 MoXTaYOZ막(4)을 형성한다.First, Mo x Ta Y N Z (2) is deposited to a thickness of about 500 kPa on the glass substrate (1) by the cosputtering method as shown in FIG. 5a, and Mo X Ta Y (3) as shown in FIG. The ratio of and y is set to 10:90. The film is deposited to a thickness of about 4000 kPa and then anodized to form a Mo X Ta Y O Z film 4.
이어 제5c도와 같이 ZnS:Mn(또는 Zns:TbF3)를 전자 빔(Electron Beam)법으로 약 7000Å의 두께로 증착하여 형광층(5)을 형성하고 제5d도와 같이 Si3N4막을 스퍼터링법으로 약 3000Å의 두께로 증착하여 절연층(6)을 형성하므로써 엘렉트로 루미네센스부를 형성한다.Subsequently, as illustrated in FIG. 5C, ZnS: Mn (or Zns: TbF 3 ) is deposited to a thickness of about 7000 으로 by an electron beam method to form a fluorescent layer 5, and as shown in FIG. 5D, a sputtering method of Si 3 N 4 is performed. In this way, the electroluminescent portion is formed by depositing at a thickness of about 3000 GPa to form the insulating layer 6.
그리고 제5e도와 같이 상기 엘렉트로 루미네센스부의 픽셀사이에 Cr막(7)을 전자빔법으로 약 2000Å의 두께로 증착한 다음 이를 페터닝하고 제5f도와 같이 a-Si막(8)을 PECVD(Plasma Enhanced CVD)법으로 약 8000Å의 두께로 증착한 다음 이를 패터닝 하므로써 광센서인 포토다이오드부를 형성한다.Then, as shown in FIG. 5E, a Cr film 7 is deposited to a thickness of about 2000 microseconds between the pixels of the electroluminescent unit by an electron beam method, and then patterned. The a-Si film 8 is PECVD (figure 5F). Plasma Enhanced CVD) forms a photodiode, an optical sensor, by depositing it at a thickness of about 8000Å and then patterning it.
이어 제5g도와 같이 상기 엘렉트로 루미네센스부와 포토다이오드부위에 ITO막을 약 2500Å의 두께로 증착하고 이를 패터닝하여 투명전극(9)을 형성한 다음 제 5h도와 같이 각 포토다이오드의 배면에 Al을 전자빔법으로 약 6000Å의 두께로증착하고 이를 패터닝하므로써 포토다이오드용 배면전극(10)을 형성한다.Subsequently, as shown in FIG. 5g, an ITO film is deposited on the electroluminescent portion and the photodiode portion to a thickness of about 2500 kV, and patterned to form a transparent electrode 9, and then Al is formed on the back surface of each photodiode as shown in FIG. 5h. The back electrode 10 for the photodiode is formed by evaporating and patterning it to a thickness of about 6000 mW by the electron beam method.
이때 포토다이오드는 약 1000개의 픽셀당 하나의 비율로 형성한다.In this case, the photodiode is formed at a ratio of about 1000 pixels.
이와 같이 제조되어지는 본 발명에 의한 엘렉트로 루미네센스 소자는 구동시 주변의 광의세기 및 명암을 포토다이오드로 감지하여 적당한 콘트라스트가 되도록 엘렉트로 루미네센스의 휘도를 조절하게 된다. 이상과 같이 본 발명에 의하면 다음과 같은 효과가 있다.The electroluminescent device according to the present invention manufactured as described above adjusts the luminance of the electroluminescence so as to have a suitable contrast by sensing the intensity and contrast of the surrounding light with a photodiode when driven. As described above, the present invention has the following effects.
첫째, 면적이 넓은 엘렉트로 루미네센스 디스플레이부나 모니터에 사용되어 주위의 환경에 따라 적절한 콘트라스트를 자동으로 조절해주므로써 사용자의 눈의 피로를 덮어준다.First, it is used in a large area electroluminescent display or monitor to automatically adjust the appropriate contrast according to the surrounding environment to cover the eyestrain of the user.
둘째, 절연강도가 높은 MoXTaYOZ산화막을 절연층으로 이용하므로써 소자의 신뢰성을 높일 수 있다.Second, the reliability of the device can be improved by using a high Mo x Ta Y O Z oxide film as an insulating layer.
셋째, MoXTaY의 원활한 애노다이징을 위해 이전에 MoXTaYNZ질화막을 글래스 기판에 증착하므로써 우수한 MoXTaYOZ산화막이 얻어지므로 소자의 신뢰성을 높일 수 있다.Third, the high Mo Ta X Y Z O oxide film before the Mo X Ta Y N Z nitride film to facilitate her Noda easing of Mo X Ta Y By deposited on the glass substrate may therefore improve the reliability of the device is obtained.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900021358A KR930011910B1 (en) | 1990-12-21 | 1990-12-21 | Structure and manufcturing method of electroluminescence |
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| KR1019900021358A KR930011910B1 (en) | 1990-12-21 | 1990-12-21 | Structure and manufcturing method of electroluminescence |
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| Publication Number | Publication Date |
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| KR920013791A KR920013791A (en) | 1992-07-29 |
| KR930011910B1 true KR930011910B1 (en) | 1993-12-22 |
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| KR100769444B1 (en) | 2006-06-09 | 2007-10-22 | 삼성에스디아이 주식회사 | Organic light emitting diode |
| KR100776498B1 (en) * | 2006-06-09 | 2007-11-16 | 삼성에스디아이 주식회사 | Organic light emitting display device and method for fabricating the same |
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