KR930009435U - 리프레쉬 발생회로 - Google Patents

리프레쉬 발생회로

Info

Publication number
KR930009435U
KR930009435U KR2019910017731U KR910017731U KR930009435U KR 930009435 U KR930009435 U KR 930009435U KR 2019910017731 U KR2019910017731 U KR 2019910017731U KR 910017731 U KR910017731 U KR 910017731U KR 930009435 U KR930009435 U KR 930009435U
Authority
KR
South Korea
Prior art keywords
generation circuit
refresh generation
refresh
circuit
generation
Prior art date
Application number
KR2019910017731U
Other languages
English (en)
Other versions
KR940007284Y1 (ko
Inventor
홍현석
Original Assignee
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사 filed Critical 금성일렉트론 주식회사
Priority to KR2019910017731U priority Critical patent/KR940007284Y1/ko
Publication of KR930009435U publication Critical patent/KR930009435U/ko
Application granted granted Critical
Publication of KR940007284Y1 publication Critical patent/KR940007284Y1/ko

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408Address circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/18Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR2019910017731U 1991-10-23 1991-10-23 리프레쉬 발생회로 KR940007284Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019910017731U KR940007284Y1 (ko) 1991-10-23 1991-10-23 리프레쉬 발생회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019910017731U KR940007284Y1 (ko) 1991-10-23 1991-10-23 리프레쉬 발생회로

Publications (2)

Publication Number Publication Date
KR930009435U true KR930009435U (ko) 1993-05-26
KR940007284Y1 KR940007284Y1 (ko) 1994-10-17

Family

ID=19320995

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019910017731U KR940007284Y1 (ko) 1991-10-23 1991-10-23 리프레쉬 발생회로

Country Status (1)

Country Link
KR (1) KR940007284Y1 (ko)

Also Published As

Publication number Publication date
KR940007284Y1 (ko) 1994-10-17

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Legal Events

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E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
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FPAY Annual fee payment

Payment date: 20050922

Year of fee payment: 12

EXPY Expiration of term