KR930004548Y1 - Rgb signal amplication circuit - Google Patents

Rgb signal amplication circuit Download PDF

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KR930004548Y1
KR930004548Y1 KR2019900016700U KR900016700U KR930004548Y1 KR 930004548 Y1 KR930004548 Y1 KR 930004548Y1 KR 2019900016700 U KR2019900016700 U KR 2019900016700U KR 900016700 U KR900016700 U KR 900016700U KR 930004548 Y1 KR930004548 Y1 KR 930004548Y1
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transistors
bias
circuit
amplification
base
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KR920008638U (en
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최연상
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금성일렉트론 주식회사
문정환
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N9/00Details of colour television systems
    • H04N9/64Circuits for processing colour signals
    • H04N9/68Circuits for processing colour signals for controlling the amplitude of colour signals, e.g. automatic chroma control circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1207Resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)

Abstract

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Description

R, G, B신호 증폭회로R, G, B signal amplification circuit

제1도는 종래의 R, G, B신호 증폭회로도.1 is a conventional R, G, B signal amplification circuit diagram.

제2도는 본 고안에 따른 R. G. B신호 증폭회로도.2 is a R. G. B signal amplification circuit according to the present invention.

제3도는 본 고안에 따른 크로스토크발생 파형도.3 is a crosstalk generation waveform diagram according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1, 2, 3 : R. G. B증폭회로 4 : 바이어스회로1, 2, 3: R. G. B amplifier circuit 4: Bias circuit

11, 21, 31, : 바이어스버퍼11, 21, 31,: bias buffer

본 고안은 R, G, B비디오신호를 증폭하는 3개의 증폭회로 상호간 크로스토크(crosstalk)방지를 위한 회로에 관한 것으로, 특히 PC의 컬러모니터에서 R, G, B비디오신호를 증폭할 때 3개의 증폭기 상호간에 발생하는 크로스토크방지에 적당하도록 한 R, G, B신호 증폭회로에 관한 것이다.The present invention relates to a circuit for preventing crosstalk between three amplifying circuits for amplifying R, G, and B video signals. In particular, the present invention relates to a circuit for amplifying R, G, and B video signals in a color monitor of a PC. The present invention relates to R, G, and B signal amplification circuits suitable for preventing crosstalk between amplifiers.

종래의 R, G, B신호 증폭회로는 제1도에 도시된 바와같이 R, G, B신호입력(Rin), (Gin), (Bin)단자가 각기 트랜지스터(Q1), (Q4), (Q7)의 베이스에 접속되고, 에미터가 각기 접지콘덴서(R1),(R3),(R5)을 통해 접지된 상기 트랜지스터(Q1),(Q4),(Q7)의 콜렉터가 각기 트랜지스터(Q2, Q3), (Q5, Q6), (Q8, Q9)의 에미터에 접속되며, 가변저항(VR1)에 따라 바이어스 조절되는 바이어스 출력(V1), (V2)단자가 각기 접지콘덴서(C2), (C1)에 접속된 바이어스회로(4)의 상기 바이어스출력(V1), (V2)단자가 각기 상기 트랜지스터(Q2, Q5, Q8), (Q3, Q6, Q9)의 베이스에 접속되고, 각기 풀업저항(R2), (R4), (R6)이 접속된 상기 트랜지스터(Q3), (Q6), (Q9)의 콜렉터 접속점이 각기 R, G, B출력(Rout), (Gout), (Bout)단자에 접속되어 R, G, B신호 증폭회로(1), (2), (3)가 각기 구성되었다.In the conventional R, G, and B signal amplification circuits, as shown in FIG. 1, the R, G, and B signal inputs Rin, Gin, and Bin terminals are transistors Q1, Q4, and ( The collectors of the transistors Q1, Q4, and Q7 connected to the base of Q7, and the emitters are grounded through the ground capacitors R1, R3, and R5 are respectively transistors Q2, The bias output (V1), (V2) terminals connected to the emitters of Q3), (Q5, Q6) and (Q8, Q9) and bias-adjusted according to the variable resistor (V R1 ) are respectively ground capacitor (C2), The bias output (V1), (V2) terminals of the bias circuit (4) connected to (C1) are connected to the bases of the transistors (Q2, Q5, Q8), (Q3, Q6, Q9), respectively. The collector connection points of the transistors Q3, Q6, and Q9 to which the resistors R2, R4, and R6 are connected are R, G, B outputs Rout, Gout, and Bout, respectively. R, G, and B signal amplifying circuits 1, 2, and 3 were respectively connected to the terminals.

이와같이 구성된 종래의 R, G, B신호 증폭회로의 작용 및 문제점을 설명하면 다음과 같다.Referring to the operation and problems of the conventional R, G, B signal amplification circuit configured as described above are as follows.

R신호입력(Rin)이 트랜지스터(Q1)의 베이스에 인가되면, 그 트랜지스터(Q1)를 통한 후 그 트랜지스터(Q1)의 콜렉터의 에미터가 공통접속되어 차동증폭 작용하는 트랜지스터(Q2, Q3)의 차동증폭에 따라 트랜지스터(Q3)의 콜렉터측에서 R출력(Rout)이 나타난다.When the R signal input Rin is applied to the base of the transistor Q1, the emitters of the collectors of the transistor Q1 are commonly connected through the transistor Q1, and the transistors Q2 and Q3 act as differential amplifiers. According to the differential amplification, R output Rout appears at the collector side of transistor Q3.

이때 이득은 트랜지스터(Q1)의 에미터 저항(Q1)과 트랜지스터(Q3)의 콜렉터 저항(R2)에 의해 결정(R2/R1)되며, 자동증폭트랜지스터(Q2, Q3)는 베이스에 바이어스회로(4)의 바이어스출력(V1, V2)을 인가받으므로, 바이어스조절가변저항(VR1)의 조절에 따라 인가받는 바이어스가 조절되어 상기 저항(R1, R2)에 의한 이득(R2/R1)을 조절하게 된다.In this case, the gain is determined by the emitter resistor Q1 of the transistor Q1 and the collector resistor R2 of the transistor Q3 (R2 / R1), and the automatic amplification transistors Q2 and Q3 have a bias circuit 4 at the base. Since the bias outputs V1 and V2 are applied, the bias applied according to the adjustment of the bias control variable resistor V R1 is adjusted to adjust the gain R2 / R1 by the resistors R1 and R2. do.

마찬가지로 G, B신호(Gin), (Bin)도 각기 G. B신호 증폭회로(2), (3)를 통해 증폭되어 출력(Gout), (Bout)된다. 여기서 콘덴서(C1), (C2)는 증폭회로(1), (2),(3)의 각 차동증폭트랜지스터(Q2, Q3), (Q5, Q6). (Q8, Q9)의 베이스에 인가받는 바이어스(V1), (V2)를 인가받으므로 공통으로 바이어스가 공급되게 하여 증폭회로(1), (2), (3) 상호간의 크로스토크를 향상시킨다.Similarly, the G, B signals Gin and Bin are also amplified by the G. B signal amplifying circuits 2 and 3, respectively, and outputted to Gout and Bout. Here, the capacitors C1 and C2 are the differential amplifier transistors Q2 and Q3 and Q5 and Q6 of the amplification circuits 1, 2, and 3, respectively. Since the biases V1 and V2 applied to the bases of Q8 and Q9 are applied, the bias is commonly supplied so that crosstalk between the amplifying circuits 1, 2, and 3 is improved.

그러나, 이와같은 종래의 R, G, B증폭회로는 3개의 증폭회로(1), (2), (3)가 공통으로 이득이 조절되는 편리한 이점은 있지만 R, G, B증폭회로(1), (2), (3)상호간의 크로스토크가 발생하여 증폭회로 특성을 악화시키는 요인이 되며, 이러한 현상은 3채널의 R, G, B증폭회로를 각각 내장한 광대역 증폭기에서 더욱 심각한 문제점이 야기될 수 있다.However, such conventional R, G, B amplifier circuits have a convenient advantage in that the gains of three amplification circuits (1), (2), and (3) are commonly adjusted. , (2), (3) Crosstalk between each other causes deterioration of amplification circuit characteristics. This phenomenon causes more serious problems in broadband amplifiers each equipped with three channels of R, G, and B amplification circuits. Can be.

본 고안은 이와같은 문제점을 감안하여 차동증폭트랜지스터에 인가되는 바이어스를 각기 버퍼링하여 인가시키므로서, R, G, B증폭회로 상호간에 발생되는 크로스토크를 억제하도록 회로를 안출한 것으로, 이를 첨부한 도면을 참조해 상세히 설명하면 다음과 같다.In consideration of such a problem, the present invention buffers and applies bias applied to the differential amplification transistor, thereby devising a circuit to suppress crosstalk generated between the R, G, and B amplifier circuits. With reference to the following in detail.

제2도는 본 고안에 따른 R, G, B 증폭회로도로서, 이에 도시한 바와같이 바이어스회로(4) 바이어스출력(V1, V2)를 각기 베이스에 인가받아 자동증폭 작용하는 트랜지스터(Q2, Q3),(Q5, Q6), (Q8, Q9)의 각 공통에미터에 콜렉터를 접속하고 에미터에 접지저항(R1), (R3), (R5)을 각기 접속한 트랜지스터(Q1), (Q4), (Q7)의 베이스에 각기 R, G, B신호(Rin), (Gin), (Bin) 입력을 인가하여 풀업저항(R2), (R4). (R6)을 접속한 상기 트랜지스터(Q3), (Q6), (Q9)의 콜렉터 접속점을 통해 R, G, B출력 트랜지스터(Q3), (Q6), (Q9)의 콜렉터 접속점을 통해 R, G, B출력(Rout), (Gout), (Bout)을 하도록 하는 R, G, B(1), (2). (3)에 있어서, 상기 바이어스회로(4)의 바이어스출력(V1), 메이스에 인가받는 트랜지스터(Q11, Q13), (Q21, Q23), (Q31, Q33)의 에미터를 각기 상기 증폭회로(1), (2), (3)의 차동증폭트랜지스터(Q2, Q3), (Q5, Q6), (Q8, Q9)의 베이스에 접속함과 아울러 상기 트랜지스터(Q11), (Q21), (Q31)의 에미터는 저항(R11), (R21), (R31)을 통해 콜렉터와 베이스가 연결된 전류원트랜지스터(Q12), (Q22), (Q32)의 콜렉터 접속점에 연결하고, 상기 트랜지스터(Q13), (Q23), (Q33)의 에미터는 각기 상기 전류원트랜지스터(Q12), (Q22), (Q32)와 공통베이스인 전류원트랜지스터(Q14), (Q24), (Q34)의 콜렉터에 접속하여 각기 바이어스버퍼(11), (21), (31)를 구성한후, 상기 바이어스회로(4)의 바이어스출력(V1), (V2)을 버퍼링하여 상기 증폭회로(1),(2),(3)의 차동증폭단 바이어스를 인가하도록 구성하였다.2 is an R, G, B amplification circuit diagram according to the present invention, as shown in the transistors (Q2, Q3), which is applied to the bias circuit (4) bias output (V1, V2) to each of the base to automatically amplify, Transistors (Q1), (Q4), and a collector connected to each common emitter (Q5, Q6) and (Q8, Q9) and ground resistors (R1), (R3), and (R5) respectively connected to the emitter. R, G, B signals (Rin), (Gin), (Bin) inputs are applied to the base of (Q7), respectively, to pull-up resistors (R2) and (R4). R, G, and B through the collector connection points of the output transistors Q3, Q6, and Q9 through the collector connection points of the transistors Q3, Q6, and Q9 connected to R6. , R, G, B (1), (2) for B output (Rout), (Gout), (Bout). (3), the emitters of the transistors Q11, Q13, Q21, Q23, Q31, Q33 applied to the bias output V1 and mace of the bias circuit 4 1), (2), and (3) are connected to the bases of the differential amplification transistors (Q2, Q3), (Q5, Q6) and (Q8, Q9), and the transistors (Q11), (Q21), and (Q31). The emitter of) is connected to the collector connection point of the current source transistors Q12, Q22, and Q32 to which the collector and the base are connected through resistors R11, R21, and R31, and the transistors Q13, ( The emitters of Q23) and Q33 are connected to the collectors of current source transistors Q14, Q24, and Q34, which are common bases with the current source transistors Q12, Q22, and Q32, respectively, respectively. 11), (21), and (31), and buffers the bias outputs (V1) and (V2) of the bias circuit (4) to differential amplification stages of the amplification circuits (1), (2), and (3). It was configured to apply a bias.

이와같이 구성한 본 고안의 작용 및 효과를 상세히 설명하면 다음과 같다.Referring to the operation and effects of the present invention configured in this way as follows.

R신호(Rin)를 예로 설명하면, R신호(Rin)는 증폭회로(1) 트랜지스터(Q1)의 베이스에 입력되어 차동증폭단의 공통에미터로 동작하는 그 트랜지스터(Q1)를 통해 증폭된 후 다른 증폭회로와 공통 베이스로 동작하는 차동증폭트랜스터(Q3)의 콜렉터를 통해 증폭된 R출력(Rout)을 얻을 수 있다.Referring to the R signal Rin as an example, the R signal Rin is input to the base of the amplifying circuit 1 transistor Q1 and amplified through the transistor Q1 acting as a common emitter of the differential amplifier stage, and then the other. The amplified R output Rout can be obtained through the collector of the differential amplification transformer Q3 operating as a common base with the amplifying circuit.

이때 최대이득 R2/R1의 이득을 트랜지스터(Q1)가 얻게 되는데 차동증폭단 구성인 트랜지스터(Q2, Q3)의 양단 베이스 전압차에 의해 트랜지스터(Q1)의 이득을 조절한다.At this time, the gain of the maximum gain R2 / R1 is obtained by the transistor Q1, and the gain of the transistor Q1 is adjusted by the base voltage difference between the two ends of the transistors Q2 and Q3 having the differential amplifier configuration.

이와같은 과정은 종래와 동일하며, G신호(Gin), B신호(Bin)도 각기 증폭회로(2),(3)를 통해 상기 R신호(Rin)와 동일작용의 증폭을 거쳐 출력(Gout), (Bout)하게 된다.This process is the same as in the prior art, and the G signal Gin and the B signal Bin are also amplified by the same action as the R signal Rin through the amplification circuits 2 and 3, respectively. , (Bout).

여기서, 비디오 신호가 공통베이스로 동작하는 트랜지스터(Q3), (Q6), (Q9)을 통과할 때 각 트랜지스터의 기생 캐패시터(Cbc, Cbe)에 의해 베이스쪽으로 궤환되는 신호에 의해 크로스토크가 발생하는데, 이를 방지하고자 베이스 바이어스를 각기 바이어스버퍼(11), (21). (31)를 통해 인가시키므로 버퍼에 의해 궤환되는 신호를 차단시켜 다른 증폭회로에 영향을 주는 것을 방지한다.Here, when the video signal passes through the transistors Q3, Q6, and Q9 operating as a common base, crosstalk is generated by a signal fed back to the base by parasitic capacitors Cbc and Cbe of each transistor. To prevent this, the base bias is respectively bias buffer (11), (21). In this case, the signal is fed back by 31 to block the signal fed back by the buffer, thereby preventing other amplifier circuits from being affected.

즉, 바이어스 회로(4)의 바이어스출력(V1), (V2)을 각기 바이어스버퍼(11), (21), (31)의 트랜지스터(Q11, Q13), (Q21, Q23), (Q31, Q33)를 통해 완충증폭하는 버퍼링을 거쳐 차동증폭단의 공통베이스 바이어스를 공급하고, 그 버퍼작용의 트랜지스터 (Q11, Q13 ), (Q21, Q23), (Q31. Q33)를 각기 저항(R11), (R21), (R31)과 공통베이스인 전류원트랜지스터(Q12, Q14), (Q22, Q24), (Q32, Q34)를 통해 양단 베이스전압 균형을 맞추어 준다.That is, the bias outputs V1 and V2 of the bias circuit 4 are connected to the transistors Q11, Q13, Q21, Q23, Q31, Q33 of the bias buffers 11, 21, and 31, respectively. After supplying the buffer through the buffer amplifier, the common base bias of the differential amplifier stage is supplied, and the transistors Q11, Q13, Q21, Q23, and Q31. ), The base voltage is balanced at both ends through current source transistors (Q12, Q14), (Q22, Q24), and (Q32, Q34) which are common bases with (R31).

따라서 트랜지스터(Q3), (Q6), (Q9)의 기생캐패시터(capacitor)에 의해 일측의 증폭회로에서 다른 증폭회로의 베이스쪽으로 궤환되면서 발생되는 크로스토크를 각 버퍼의 트랜지스터(Q13), (Q23), (Q33)에 의해 신호가 궤환되는 것을 차단시키므로 크로스토크를 방지한다.Accordingly, the crosstalk generated by the parasitic capacitors of the transistors Q3, Q6, and Q9 is fed back from the amplifying circuit on one side to the base of the other amplifying circuit, and thus the transistors Q13 and Q23 of each buffer. It prevents crosstalk because it blocks the signal from being fed back by Q33.

제3도는 본 발명에 따른 크로스토크 파형도로서, 스피스시뮬레이션(spice simuation)파형인데, A파형은 종래에 버퍼를 사용하지 않았을때에 채널간 크로스토크발생 파형이고, B파형은 본 고안에 따른 버퍼를 사용하여 공통베이스 바이어스 공급할 때 채널간 크로스토크발생 파형으로 본 고안에 따른 버퍼를 사용하여 공통베이스 바이어스를 공급하면 크로스토크를 현저히 줄일 수 있다.3 is a crosstalk waveform diagram according to the present invention, which is a spice simulation waveform, where A waveform is a crosstalk generation waveform between channels when a buffer is not used in the prior art, and B waveform is according to the present invention. When supplying a common base bias using a buffer, crosstalk can be significantly reduced by supplying a common base bias using a buffer according to the present invention as a crosstalk generation waveform between channels.

이상에서 설명한 바와 같이 본 고안은 각 증폭회로의 공통베이스 바이어스를 각기 버퍼를 통해 공급하므로 크로스토크발생을 현저히 줄일 수 있으며, 와이드-밴드 앰프에서 한 개의 바이어스회로로 3개의 증폭회로를 조절할 때 특히 유용하다.As described above, the present invention can significantly reduce crosstalk since the common base bias of each amplifier is supplied through the buffer, and is particularly useful when controlling three amplifier circuits with one bias circuit in a wide-band amplifier. Do.

Claims (1)

가변저항(VR1)에 의해 바이어스 조절하는 바이어스회로(4)로부터 각 증폭회로의 차동증폭단 트랜지스터(Q2, Q3), (Q5, Q6), (Q8, Q9)의 공통베이스 바이어스를 공급받고 각기 공통에미터 트랜지스터(Q1), (Q4), (Q7)을 통해 R, G, B신호(Rin), (Gin), (Bin)를 입력하여 상기 차동증폭단 트랜지스터(Q3), (Q6), (Q9)를 통해 R, G, B출력(Rout), (Gout), (Bout)을 하도록 구성된 R, G, B증폭회로(1), (2), (3)에 있어서, 상기 바이어스회로(4)의 바이어스출력(V1), (V2)을 각기 베이스에 인가받는 트랜지스터(Q11, Q13), (Q21, Q23), (Q31, Q33)의 에미터를 상기 차동증폭트랜지스터(Q2, Q3), (Q5, Q6), (Q8, Q9)의 베이스에 연결함과 아울러 상기 트랜지스터(Q11), (Q21), (Q31)의 에미터를 각기 저항(R11), (R21), (R31)을 통한후 전류원트랜지스터(Q12), (Q22), (Q32)의 콜렉터 및 베이스에 공통 접속하고, 그 접속점에 각기 베이스를 접속한 전원트랜지스터(Q14), (Q24), (Q34)의 콜렉터를 상기 트랜지스터(Q13), (Q23), (Q33)의 에미터 접속점에 접속한 바이어스버퍼(11),( 12), (13)를 포함하는 구성을 한 것을 특징으로 하는 R, G, B신호 증폭회로.A common base bias of the differential amplification transistors Q2, Q3, Q5, Q6, and Q8 and Q9 of each amplification circuit is supplied from the bias circuit 4 which is bias-controlled by the variable resistor V R1 . R, G, B signals (Rin), (Gin), (Bin) are inputted through emitter transistors (Q1), (Q4), (Q7), and the differential amplifier transistors (Q3), (Q6), (Q9). In the R, G, B amplification circuits (1), (2), and (3) configured to perform R, G, and B outputs (Rout), (Gout), and (Bout) through the bias circuit (4). Emitters of transistors Q11, Q13, Q21, Q23, and Q31 and Q33 to which the bias outputs V1 and V2 are applied to the base, respectively, and the differential amplifier transistors Q2 and Q3 and Q5. , Q6) and (Q8, Q9) and the emitters of the transistors (Q11), (Q21) and (Q31), respectively, through the resistors (R11), (R21) and (R31) Common connections are made to the collectors and bases of the transistors Q12, Q22, and Q32. Bias buffers 11, 12, and 13 which connect the connected collectors of the power supply transistors Q14, Q24, and Q34 to the emitter connection points of the transistors Q13, Q23, and Q33. R, G, B signal amplification circuit comprising a) configuration comprising.
KR2019900016700U 1990-10-31 1990-10-31 Rgb signal amplication circuit KR930004548Y1 (en)

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