KR930001004A - Photoresist Composition for Photolithography Using Deep UV - Google Patents

Photoresist Composition for Photolithography Using Deep UV Download PDF

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Publication number
KR930001004A
KR930001004A KR1019910009771A KR910009771A KR930001004A KR 930001004 A KR930001004 A KR 930001004A KR 1019910009771 A KR1019910009771 A KR 1019910009771A KR 910009771 A KR910009771 A KR 910009771A KR 930001004 A KR930001004 A KR 930001004A
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KR
South Korea
Prior art keywords
carbon atoms
photolithography
group
deep
alkyl
Prior art date
Application number
KR1019910009771A
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Korean (ko)
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KR940005612B1 (en
Inventor
김광태
김정락
김진열
Original Assignee
서주인
제일합섬 주식회사
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Priority to KR1019910009771A priority Critical patent/KR940005612B1/en
Publication of KR930001004A publication Critical patent/KR930001004A/en
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Publication of KR940005612B1 publication Critical patent/KR940005612B1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/04—Chromates

Abstract

내용 없음No content

Description

디-프 자외선(Deep UV)을 이용하는 포토리소그래피용 포토레지스트 조성물.Photoresist composition for photolithography using Deep UV.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (1)

디-프 자외선(Deep UV)을 이용하는 포토리소그래프용 포토레지스트의 조성물에 있어서, 일반식(Ⅰ)의 폴리비닐계 공중합체를 광가교성 고분자 수지로 사용하고, 가교체로는 일반식(Ⅱ)의 멜라민 유도체를 혼합함을 특징으로 하는 디-프 자외선을 이용하는 포토리소그래피용 포토 레지스트의 조성물.In the composition of the photoresist for photolithography using Deep UV, the polyvinyl copolymer of general formula (I) is used as the photocrosslinkable polymer resin, and as the crosslinked product, the general formula (II) A composition of a photoresist for photolithography using di-op ultraviolet light, characterized by mixing a melamine derivative. 여기서 n은 1,000 이상의 정수이며, R'는 수소원자 또는 탄소원자 4~6개의 질소고리 화합물이고, R"는 수소원자 또는 탄소원자 4~10개의 알킬기 및 탄소원자 2~10개의 알킬기가 치환된 아릴기로서, R'와 R"는 동일한 치환체가 아니며, 적어도 1개는 탄소원자 4~10개의 알콕시케톤기일 수 있다. R는 할로겐 원자가 1~3개 치환된 알킬기로서 탄소수 1~3개를 포함하며 3개의 R가 각기 서로 다를 수도 있다. 또한 S는 황원자를 의미하나 질소원자가 대신 치환될 수 있으며 이 경우 R는 탄소수 4~10개의 알킬기일 수 있으며 또한 R치환기가 헥사에톡시기의 알킬기인 경우 황(S)은 질소원자가 된다.Wherein n is an integer of 1,000 or more, R 'is a hydrogen atom or a nitrogen ring compound having 4 to 6 carbon atoms, R "is a hydrogen atom or an aryl substituted with 4 to 10 alkyl groups and 2 to 10 alkyl atoms. As a group, R 'and R "are not the same substituent and at least 1 may be an alkoxy ketone group of 4-10 carbon atoms. R Is an alkyl group substituted with 1 to 3 halogen atoms, containing 1 to 3 carbon atoms, and 3 R May be different. In addition, S means a sulfur atom, but a nitrogen atom may be substituted instead, in which case R May be an alkyl group of 4 to 10 carbon atoms, and R When the substituent is an alkyl group of hexaethoxy group, sulfur (S) is a nitrogen atom. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019910009771A 1991-06-13 1991-06-13 Photo-resist composition use deep ultraviolet rays KR940005612B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910009771A KR940005612B1 (en) 1991-06-13 1991-06-13 Photo-resist composition use deep ultraviolet rays

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910009771A KR940005612B1 (en) 1991-06-13 1991-06-13 Photo-resist composition use deep ultraviolet rays

Publications (2)

Publication Number Publication Date
KR930001004A true KR930001004A (en) 1993-01-16
KR940005612B1 KR940005612B1 (en) 1994-06-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910009771A KR940005612B1 (en) 1991-06-13 1991-06-13 Photo-resist composition use deep ultraviolet rays

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100421034B1 (en) * 1999-04-21 2004-03-04 삼성전자주식회사 Resist composition and fine pattern forming method using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100421034B1 (en) * 1999-04-21 2004-03-04 삼성전자주식회사 Resist composition and fine pattern forming method using the same

Also Published As

Publication number Publication date
KR940005612B1 (en) 1994-06-21

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