KR920701048A - Thin-film ceramic manufacturing method by sol gel processing - Google Patents

Thin-film ceramic manufacturing method by sol gel processing

Info

Publication number
KR920701048A
KR920701048A KR1019910701367A KR910701367A KR920701048A KR 920701048 A KR920701048 A KR 920701048A KR 1019910701367 A KR1019910701367 A KR 1019910701367A KR 910701367 A KR910701367 A KR 910701367A KR 920701048 A KR920701048 A KR 920701048A
Authority
KR
South Korea
Prior art keywords
sol
mixed
added
produce
composition
Prior art date
Application number
KR1019910701367A
Other languages
Korean (ko)
Inventor
그로브스 폴
아이 스튜어드 니겔
로샨티 랜드함 로웨나
제이 티드 시몬
이이 와렌더 테레사
Original Assignee
원본미기재
앨컨 인터내쇼날 리미팃드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB898909107A external-priority patent/GB8909107D0/en
Priority claimed from GB898910717A external-priority patent/GB8910717D0/en
Application filed by 원본미기재, 앨컨 인터내쇼날 리미팃드 filed Critical 원본미기재
Publication of KR920701048A publication Critical patent/KR920701048A/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/003—Titanates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G25/00—Compounds of zirconium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G25/00—Compounds of zirconium
    • C01G25/006—Compounds containing, besides zirconium, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
    • C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/30—Three-dimensional structures
    • C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead based oxides
    • H10N30/8554—Lead zirconium titanate based

Abstract

내용 없음No content

Description

졸 겔 가공에 의한 박막 세라믹 제법Thin-film ceramic manufacturing method by sol gel processing

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

본 발명에 따르는 PZT공급물 제조를 위한 흐름도.Flow chart for manufacturing PZT feed according to the present invention.

Claims (11)

사용된 안정화제 양이, 알콕사이드졸이 용액에 첨가될때 혼탁을 막기에 충분히 큰 정도임을 특징으로 하는, 적어도 하나의 금속염의 용액을 안정화제내에 형성시키고, 티타늄 알콕사이드 졸 및/또는 지르코늄 알콕 사이드 졸을 용액을 첨가시켜 혼합졸 선구물질을 형성시키고, 물을 첨가하여 혼합졸을 형성시켜, 티타네이트-기재 또는 지르코네이트-기재 세라믹을 생성시키기 위해 겔화되고 가열될 조성물의 혼합졸을 제조하는 방법.The amount of stabilizer used is such that the solution of at least one metal salt is formed in the stabilizer, characterized in that it is large enough to prevent turbidity when the alkoxide sol is added to the solution, and the titanium alkoxide sol and / or zirconium alkoxide sol is formed. Adding a solution to form a mixed sol precursor and water to form a mixed sol to produce a mixed sol of the composition to be gelled and heated to produce a titanate-based or zirconate-based ceramic. 제1항에 있어서, 안정화제가 아세트산인 방법.The method of claim 1 wherein the stabilizer is acetic acid. 제2항에 있어서, 금속염이 아세트산 납인 방법.The method of claim 2 wherein the metal salt is lead acetate. 제3항에 있어서, 아세트산 납 삼수화물 g당 빙초산 적어도 0.6㎖가 사용되는 방법.4. The process of claim 3 wherein at least 0.6 ml of glacial acetic acid is used per gram of lead acetate trihydrate. 제1항 내지 제4항중 어느 한 항에 있어서, 지르코늄 알콕사이드 졸이 티타늄 알콕사이드 졸의 첨가이전에 용액에 첨가되는 방법.The method of claim 1, wherein the zirconium alkoxide sol is added to the solution prior to the addition of the titanium alkoxide sol. 제1항 내지 제5항 중 어느 한 항에 있어서, 알콜과 혼합된 물이 졸선구물질에 첨가되는 방법.The method of claim 1, wherein water mixed with alcohol is added to the sol precursor. 제1항 내지 제6항중 어느 한 항에 있어서, 티타늄 및 지르코늄 이외의 적어도 하나의 금속의 알콕사이드 졸이 또한 첨가되어 혼합졸을 형성시키는 방법.The method of claim 1, wherein an alkoxide sol of at least one metal other than titanium and zirconium is also added to form a mixed sol. 제7항에 있어서, 졸 선구 물질내 금속-알콕시기의 가수분해이후, 글리콜이 그의 필름-형성성을 개선시킬 농도로 혼합졸에 첨가되는 방법.8. The method of claim 7, wherein after hydrolysis of the metal-alkoxy group in the sol precursor, glycol is added to the mixed sol at a concentration that will improve its film-formability. 제1항 내지 제8항중 어느 한 항에 있어서, 혼합졸이 비-다공성 표면 상에서 필름으로 형성되고, 필름이 가열되어 바람직한 티타네이트-기재 세라믹을 생성시키는 방법.The method according to claim 1, wherein the mixed sol is formed into a film on a non-porous surface and the film is heated to produce the desired titanate-based ceramic. 바람직하게 하기 전기 특성을 가진, 적절한 도펀트(dopant)를 함유한 조성 Pb Zr0.0-0.0Ti0.0-0.0O3의 PZT 필름: 유전상수 150-4000 유전손실률 0.001-0.08 포화분극 0-80 uC/㎠.PZT films of composition Pb Zr 0.0-0.0 Ti 0.0-0.0 O 3 containing suitable dopants, preferably having the following electrical properties: dielectric constant 150-4000 dielectric loss 0.001-0.08 saturation polarization 0-80 uC / cm 2 . 납염몰당 아세테이트 안정화제 적어도 5몰로 구성되는, 요구되는 경우 적절한 도펀트를 함유한 조성 Pb Zr0.0-0.0Ti0.0-0.0O3의 PZT 세라믹을 생성시키기 위해 겔화되고 가열될 조성물의 혼합졸.A mixed sol of a composition to be gelled and heated to produce a PZT ceramic of composition Pb Zr 0.0-0.0 Ti 0.0-0.0 O 3 , comprising a suitable dopant, if necessary, comprising at least 5 moles of acetate stabilizer per mole of lead salt. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910701367A 1989-04-21 1990-04-20 Thin-film ceramic manufacturing method by sol gel processing KR920701048A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB89091078 1989-04-21
GB898909107A GB8909107D0 (en) 1989-04-21 1989-04-21 Preparation of thin film ceramics by sol gel processing
GB898910717A GB8910717D0 (en) 1989-05-10 1989-05-10 Gel processing method
GB89107171 1989-05-10
PCT/GB1990/000612 WO1990012755A1 (en) 1989-04-21 1990-04-20 Preparation of thin film ceramics by sol gel processing

Publications (1)

Publication Number Publication Date
KR920701048A true KR920701048A (en) 1992-08-11

Family

ID=26295255

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910701367A KR920701048A (en) 1989-04-21 1990-04-20 Thin-film ceramic manufacturing method by sol gel processing

Country Status (6)

Country Link
EP (1) EP0469053A1 (en)
JP (1) JPH04506791A (en)
KR (1) KR920701048A (en)
AU (1) AU5548290A (en)
CA (1) CA2065381A1 (en)
WO (1) WO1990012755A1 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
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BE1004604A4 (en) * 1990-11-08 1992-12-22 Solvay Manufacturing method of mixed metal oxide powder.
JPH04259380A (en) * 1991-02-13 1992-09-14 Mitsubishi Materials Corp Method for controlling crystalline orientation property of pzt ferroelectric body thin film
JPH0773732A (en) * 1993-06-23 1995-03-17 Sharp Corp Dielectric thin film element and its manufacture
DE4332831C1 (en) * 1993-09-27 1994-10-06 Fraunhofer Ges Forschung Shaped bodies based on PZT(Pb(Zr, Ti)O3, lead zirconate - lead titanate), process and intermediate for the production thereof
JPH07130232A (en) * 1993-11-04 1995-05-19 Fuji Xerox Co Ltd Manufacture of conductive thin film
DE69617288T2 (en) * 1995-02-20 2002-05-23 Seiko Epson Corp Process for producing a piezoelectric thin film
US6140746A (en) * 1995-04-03 2000-10-31 Seiko Epson Corporation Piezoelectric thin film, method for producing the same, and ink jet recording head using the thin film
WO1998002378A1 (en) * 1996-07-17 1998-01-22 Citizen Watch Co., Ltd. Ferroelectric element and process for producing the same
GB9909375D0 (en) * 1999-04-24 1999-06-23 Secr Defence Improvements in or relating to sol gel processing of lead zirconate titanate thin films
KR100408517B1 (en) * 2000-12-28 2003-12-06 삼성전자주식회사 Manufacturing method for ferroelectric thin film using sol-gel process
KR100416760B1 (en) * 2001-03-12 2004-01-31 삼성전자주식회사 Method for preparing a thick coating of PZT using sol-gel process
CA2386380A1 (en) * 2002-05-27 2003-11-27 Mohammed Saad Heavy metal oxide thin film, active and passive planar waveguides and optical devices
US7229662B2 (en) * 2003-12-16 2007-06-12 National University Of Singapore Heterolayered ferroelectric thin films and methods of forming same
JP4709544B2 (en) * 2004-05-31 2011-06-22 セイコーエプソン株式会社 Precursor composition, precursor composition manufacturing method, ferroelectric film manufacturing method, piezoelectric element, semiconductor device, piezoelectric actuator, ink jet recording head, and ink jet printer
JP4803401B2 (en) * 2004-05-31 2011-10-26 セイコーエプソン株式会社 Method for manufacturing ferroelectric film
US20100285320A1 (en) * 2004-11-26 2010-11-11 Mohammed Saad Amorphous thin films and method of manufacturing same
JP4269172B2 (en) * 2004-12-24 2009-05-27 セイコーエプソン株式会社 Ink for inkjet coating, method for producing the same, and method for producing a ferroelectric film
EP1675162A3 (en) * 2004-12-27 2007-05-30 Seiko Epson Corporation Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, and ferroelectric memory
JP4543985B2 (en) * 2005-03-24 2010-09-15 セイコーエプソン株式会社 Lead zirconate titanate niobate laminate
JP2007145672A (en) * 2005-11-29 2007-06-14 Seiko Epson Corp Raw material composition for multiple metal oxide
US8623737B2 (en) 2006-03-31 2014-01-07 Intel Corporation Sol-gel and mask patterning for thin-film capacitor fabrication, thin-film capacitors fabricated thereby, and systems containing same
JP6442860B2 (en) * 2014-04-23 2018-12-26 株式会社リコー Precursor sol-gel solution, electromechanical transducer, droplet discharge head, and ink jet recording apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3331659A (en) * 1964-03-31 1967-07-18 Malloy Frank Process for producing lead titanate powder
FR2571713B1 (en) * 1984-10-15 1990-03-23 Centre Nat Rech Scient PROCESS FOR THE PREPARATION OF TITANATES, ZIRCONATES AND STANNATES

Also Published As

Publication number Publication date
EP0469053A1 (en) 1992-02-05
WO1990012755A1 (en) 1990-11-01
CA2065381A1 (en) 1990-10-22
JPH04506791A (en) 1992-11-26
AU5548290A (en) 1990-11-16

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