KR920022181U - Process gas injection device for low pressure nitride film growth system - Google Patents

Process gas injection device for low pressure nitride film growth system

Info

Publication number
KR920022181U
KR920022181U KR2019910006770U KR910006770U KR920022181U KR 920022181 U KR920022181 U KR 920022181U KR 2019910006770 U KR2019910006770 U KR 2019910006770U KR 910006770 U KR910006770 U KR 910006770U KR 920022181 U KR920022181 U KR 920022181U
Authority
KR
South Korea
Prior art keywords
low pressure
nitride film
injection device
process gas
gas injection
Prior art date
Application number
KR2019910006770U
Other languages
Korean (ko)
Other versions
KR930008361Y1 (en
Inventor
이철구
Original Assignee
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사 filed Critical 금성일렉트론 주식회사
Priority to KR2019910006770U priority Critical patent/KR930008361Y1/en
Publication of KR920022181U publication Critical patent/KR920022181U/en
Application granted granted Critical
Publication of KR930008361Y1 publication Critical patent/KR930008361Y1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR2019910006770U 1991-05-13 1991-05-13 Source gas injecting apparatus of low pressure nitride film growing system KR930008361Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019910006770U KR930008361Y1 (en) 1991-05-13 1991-05-13 Source gas injecting apparatus of low pressure nitride film growing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019910006770U KR930008361Y1 (en) 1991-05-13 1991-05-13 Source gas injecting apparatus of low pressure nitride film growing system

Publications (2)

Publication Number Publication Date
KR920022181U true KR920022181U (en) 1992-12-19
KR930008361Y1 KR930008361Y1 (en) 1993-12-22

Family

ID=19313746

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019910006770U KR930008361Y1 (en) 1991-05-13 1991-05-13 Source gas injecting apparatus of low pressure nitride film growing system

Country Status (1)

Country Link
KR (1) KR930008361Y1 (en)

Also Published As

Publication number Publication date
KR930008361Y1 (en) 1993-12-22

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