KR920020622A - High resolution patterning on solid substrate - Google Patents

Abstract

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Description

High resolution patterning on solid substrate

Since this is an open matter, no full text was included.

FIG. 1A schematically shows the formation of a monomolecular film on a solid substrate by chemical adsorption of molecules from the homogeneous solution onto the surface of the solid substrate.

FIG. 1B is a schematic diagram of symbols used in the drawing.

FIG. 2 shows graphically that patterned irradiation for a monolayer film changes the reactivity in a predetermined area of the monolayer.

Figure 3A shows schematically that the colloidal catalyst precursor is attached as a residual reaction residue in the silane molecule and that a metal plate is formed on the monolayer film.

Figure 3B schematically shows the non-reactive silane monolayer and the non-reactive byproducts of the irradiation,

4A schematically shows the profile of a semiconductor substrate after ion etching and shows a flat metal film formed by etching the substrate.

Figure 4B schematically shows the formation of a monomolecular film on the irradiated by-product by chemisorption of the colloidal molecules of the colloid from the homogeneous solution.

5A schematically illustrates stripping of the metal / colloidal catalyst after etching,

FIG. 5B schematically shows that the colloidal catalyst precursor is attached to the colloidal molecule and that a metal plate is formed on the monolayer film.

Claims (36)

(a) chemically adsorbing a self-assembling monolayer film on the surface of the substrate, (b) changing the reactivity in the film region to produce a predetermined pattern in the film, and (c) a catalyst precursor Attaching the catalyst precursor only to these regions of the film having sufficient reactivity to bond with (d) placing the substrate in an electroless metal plating bath to produce a metal plate in these regions having the catalyst precursor thereon; To create a conductive pathway on a substrate of the kind having a polar functional group on the surface. The method of claim 1, wherein the substrate is a semiconductor material and the self-assembled monolayer film is RnSiXm, where R is an organofunctional group, n is 1,2, or 3, m is 4-n, and X is Silane of the type) selected from the group consisting of halogen, alkoxy and amine. The process of claim 1 wherein the substrate is solid phase semiconducting silicon and a self-assembled monomolecular film is produced by adsorption from a solution containing chlorosilanes. The method of claim 3 wherein the chlorosilanes in solution are 7-octenyldimethylchlorosilanes. The method of claim 3 wherein the chlorosilanes in solution are 5-hexenyldimethylchlorosilanes. The method of claim 2 wherein the catalyst precursor is a colloid containing palladium and tin. The method of claim 6, wherein the substrate is continuously treated with chemical compounds of tin and palladium to produce a catalyst precursor on the substrate. The method of claim 1, wherein the reactivity in the film regions is varied by irradiating these regions to promote photolytic cleavage of the irradiated regions. The method of claim 8, wherein the wafer is in a vacuum or inert atmosphere during the irradiation process. 10. The method of claim 9, wherein the irradiated light is UV light having a wavelength of less than 200 nm. The method of claim 10, wherein the self-assembled film is a silane layer. The method of claim 1, wherein the substrate is solid phase semiconducting silicon with hydroxyl groups on its surface, and the self-assembled monomolecular film is bonded to the substrate by siloxane bridges to these hard hydroxyl groups. Selecting a monomolecular film that forms the surface of the substrate, changing the reactivity in the region of the film by irradiation to produce a predetermined pattern in the film, and catalysis only in the region of the film having sufficient reactivity with the predetermined catalyst And generate a metal plate in the catalyzed region in a substrate radio metal plating bath. The method of claim 13, wherein the substrate is dielectric silicon oxide and the film is produced on the substrate by adsorption from a solution containing chlorosilanes. The method of claim 1 wherein the substrate is alumina and the film is produced from chlorosilanes. The method of claim 1 wherein the substrate is a conductive metal and the film is produced by adsorption from chlorosilanes. The method of claim 15, wherein the chlorosilanes are UTF1. The method of claim 1, wherein the substrate is selected from the class consisting of semiconducting silicon, dielectric silicon oxide, alumina, metal and quartz, and the film is adsorbed from a solution containing silane. 19. The method of claim 18, wherein the silane is 4-aminobutyldimethylmethoxysilane. The method of claim 1, wherein the substrate is selected from the group consisting of semiconducting silicon, dielectric silicon, alumina, metals and quartz, the monomolecular film is adsorbed from a solution consisting of silane and titanate, and the catalyst precursor is palladium and tin Is a colloid containing and the metal plate is selected from the group consisting of metals which can be deposited by radio-plated copper, gold, cobalt, nickel, permalloy (iron-nickel-boron alloy) and palladium, further added to reactive ions. Transferring the pattern to the substrate by placing the substrate in the tooth and then stripping the metal with oxidant acid. A product prepared by the method of claim 1. An electrical device having a high resolution metal plate line made by the method of claim 13. Providing a substrate having at least one layer of radiation reactant having substantially equal reactivity across the surface and exposing the layer of radiation reactant to patterned radiation to provide spatially separated agents having different reactivity. Creating a patterning on the substrate by creating a first and a second region and integrally building at least one layer of additional material on one of the first and second regions. A method of producing patterned molecular assemblies. The method of claim 23, wherein the additional layer is an inorganic material, an organic material, a semiconducting material, a metal, or a mixture thereof. The method of claim 23, wherein the at least one additional layer is a metal. The method of claim 23, wherein the at least one additional layer comprises two different metal layers. 24. The method of claim 23, wherein the substrate is a semiconductor material, and the layer of radiation reactant is RnSiXm, where R is an organofunctional group, n is 1,2, or 3, m is 4-n, and X is halogen Silane, which is selected from the group consisting of alkoxy and amines. The method of claim 27, wherein the at least one additional layer comprises a conductive metal. 29. The method of claim 28, wherein said silane is chlorosilane. 24. The method of claim 23, wherein said constructing step comprises a radioless plating step. 31. The method of claim 30, wherein the at least one layer referred to above is a radiation reactant and the substrate is a second material underlying the layer of reactant. 32. The method of claim 31, wherein said at least one additional layer comprises a conductive metal. The product produced by the method of claim 23. An electrical device having a high resolution metal plate line produced by the method of claim 32. An electrical device having high resolution characteristics produced by etching a product produced by the method of claim 34 and then stripping the metal with oxidant acid. An optical device having a high resolution metal plate line, such as a slab mask, produced by the method of claim 32. ※ Note: The disclosure is based on the initial application.