KR920020602A - Trench isolation method of semiconductor device - Google Patents

Trench isolation method of semiconductor device Download PDF

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Publication number
KR920020602A
KR920020602A KR1019910005956A KR910005956A KR920020602A KR 920020602 A KR920020602 A KR 920020602A KR 1019910005956 A KR1019910005956 A KR 1019910005956A KR 910005956 A KR910005956 A KR 910005956A KR 920020602 A KR920020602 A KR 920020602A
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KR
South Korea
Prior art keywords
semiconductor device
trench isolation
isolation method
sog
forming
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KR1019910005956A
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Korean (ko)
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KR100192472B1 (en
Inventor
이남규
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문정환
금성일렉트론 주식회사
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Priority to KR1019910005956A priority Critical patent/KR100192472B1/en
Publication of KR920020602A publication Critical patent/KR920020602A/en
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Publication of KR100192472B1 publication Critical patent/KR100192472B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)

Abstract

내용 없음No content

Description

반도체장치의 트렌치 격리방법Trench isolation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 트렌치 격리 공정 단면도.2 is a cross-sectional view of a trench isolation process of the present invention.

Claims (1)

기판(1)에 트렌치를 형성하고 폴리실리콘(2)을 증착한 후 이온이 도핑된 SOG(3)를 채우는 공정과, 상기 SOG(3)를 에치-백 후 열처리에 의해 필드 도펀트를 주입하는 공정과, 상기 SOG(3)를 에치하여 제거하고 열산화막(4)을 성장시키는 공정과, 질화막(5)을 형성하여 패터닝한 후 CVD산화막(6)을 형성하고, 이어 상기 CVD 산화막(6)을 에치-백하는 공정을 차례로 실시하여서 이루어짐을 특징으로 하는 반도체장치의 트렌치 격리방법.Forming a trench in the substrate (1), depositing polysilicon (2), and filling the SOG (3) doped with ions, and implanting the field dopant by etching and heat-treating the SOG (3) And etching and removing the SOG 3 to grow the thermal oxide film 4, forming and patterning the nitride film 5 to form a CVD oxide film 6, and then forming the CVD oxide film 6 A trench isolation method for a semiconductor device, characterized in that the etch-back process is performed sequentially. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910005956A 1991-04-13 1991-04-13 Trench isolation method of semiconductor device KR100192472B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910005956A KR100192472B1 (en) 1991-04-13 1991-04-13 Trench isolation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910005956A KR100192472B1 (en) 1991-04-13 1991-04-13 Trench isolation method of semiconductor device

Publications (2)

Publication Number Publication Date
KR920020602A true KR920020602A (en) 1992-11-21
KR100192472B1 KR100192472B1 (en) 1999-06-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910005956A KR100192472B1 (en) 1991-04-13 1991-04-13 Trench isolation method of semiconductor device

Country Status (1)

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KR (1) KR100192472B1 (en)

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Publication number Publication date
KR100192472B1 (en) 1999-06-15

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