KR920020239U - D-RAMCELL's access circuit - Google Patents
D-RAMCELL's access circuitInfo
- Publication number
- KR920020239U KR920020239U KR2019910004770U KR910004770U KR920020239U KR 920020239 U KR920020239 U KR 920020239U KR 2019910004770 U KR2019910004770 U KR 2019910004770U KR 910004770 U KR910004770 U KR 910004770U KR 920020239 U KR920020239 U KR 920020239U
- Authority
- KR
- South Korea
- Prior art keywords
- ramcell
- access circuit
- access
- circuit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019910004770U KR930005780Y1 (en) | 1991-04-08 | 1991-04-08 | Access circuit of dram cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019910004770U KR930005780Y1 (en) | 1991-04-08 | 1991-04-08 | Access circuit of dram cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920020239U true KR920020239U (en) | 1992-11-17 |
| KR930005780Y1 KR930005780Y1 (en) | 1993-08-27 |
Family
ID=19312524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019910004770U KR930005780Y1 (en) | 1991-04-08 | 1991-04-08 | Access circuit of dram cell |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR930005780Y1 (en) |
-
1991
- 1991-04-08 KR KR2019910004770U patent/KR930005780Y1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR930005780Y1 (en) | 1993-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| REGI | Registration of establishment | ||
| FPAY | Annual fee payment |
Payment date: 20050721 Year of fee payment: 13 |
|
| EXPY | Expiration of term |