KR920017791A - Method of surface modification by accelerated plasma or ion - Google Patents

Method of surface modification by accelerated plasma or ion Download PDF

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Publication number
KR920017791A
KR920017791A KR1019920003796A KR920003796A KR920017791A KR 920017791 A KR920017791 A KR 920017791A KR 1019920003796 A KR1019920003796 A KR 1019920003796A KR 920003796 A KR920003796 A KR 920003796A KR 920017791 A KR920017791 A KR 920017791A
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South Korea
Prior art keywords
polymer
ions
plasma
pulses
projected
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KR1019920003796A
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Korean (ko)
Inventor
존 오더커크 앤드류
스코트 던 더글라스
치엔-치유 에드워드
노드 볼크 수잔
Original Assignee
개리 리 그리솔드
미네소타 마이닝 앤드 매뉴팩츄어링 컴패니
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Publication of KR920017791A publication Critical patent/KR920017791A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
    • B41M5/267—Marking of plastic artifacts, e.g. with laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0866—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation
    • B29C2035/0872—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation using ion-radiation, e.g. alpha-rays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/90—Ion implanted

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)

Abstract

내용 없음No content

Description

가속화된 플라즈마 또는 이온에 의한 표면 변형방법Method of surface modification by accelerated plasma or ion

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (19)

0.8바 이하의 압력 및 10ns 지 1㎲의 유효 펄스 지속시간으로 10-3내지 103J/㎠의 플루언스에서, 중합체 표면에 대하여 이온 또는 플라즈마의 스케닝빔 또는 펄스를 투사하는 것을 포함하는, 중합체 표면을 변형시키기 위한 방법.A polymer comprising projecting a scanning beam or pulse of ions or plasma onto the polymer surface at a fluence of 10 −3 to 10 3 J / cm 2 with a pressure of 0.8 bar or less and an effective pulse duration of 10 ns to 1 dB Method for Deforming the Surface. 제1항에 있어서, 상기 압력이 0.4바 이하임을 특징으로 하는 방법.The method of claim 1 wherein the pressure is 0.4 bar or less. 제1항에 있어서, 상기 압력이 0.05바 이하임을 특징으로 하는 방법.The method of claim 1 wherein the pressure is 0.05 bar or less. 제1항에 있어서, 상기 플루언스 및 펄스의 수는 상기 표면의 적어도 일부를 융삭시키기에 충분할 정도로 높음을 특징으로 하는 방법.The method of claim 1, wherein the number of fluences and pulses is high enough to melt at least a portion of the surface. 제3항에 있어서, 상기 플루언스 및 펄스의 수는 상기 표면의 적어도 일부를 융삭시킬 정도로 충분히 높으며, 상기 펄스의 지속시간은 10ns 내지 100㎲임을 특징으로 하는 방법.4. The method of claim 3, wherein the number of fluences and pulses is high enough to melt at least a portion of the surface and the duration of the pulses is between 10 ns and 100 ns. 제1항, 제3항 또는 제5항에 있어서, 상기 표면은 유기성 반결정질 중합체를 포함하며 이때 상기 플루언스 및 펄스의 수는 상기 표면의 적어도 일부를 준-무정형 상태로 전환시키는 것을 특징으로 하는 방법.6. The surface of claim 1, 3 or 5, wherein the surface comprises an organic semicrystalline polymer, wherein the number of fluences and pulses converts at least a portion of the surface into a semi-amorphous state. Way. 제1항, 제3항 또는 제5항에 있어서, 상기 표면은 폴리에틸렌 테레프탈레이트 또는 폴리테트라플루오로에틸렌으로 구성된 군으로 부터 선택된 중합체를 포함하며, 상기 펄스는 상기 중합체의 가교결합을 야기시킴을 특징으로 하는 방법.6. The surface of claim 1, 3 or 5, wherein the surface comprises a polymer selected from the group consisting of polyethylene terephthalate or polytetrafluoroethylene, wherein the pulses cause crosslinking of the polymer. How to. 제1항, 제3항 또는 제5항에 있어서, 상기 이온 또는 플라즈마는 마스크를 통하여 투사됨을 특징으로 하는 방법.6. A method according to claim 1, 3 or 5, wherein the ions or plasma are projected through a mask. 제1항, 제2항 또는 제4항에 있어서, 상기 이온 또는 플라즈마로 부터 물질의 0.1내지 10㎍/㎠가 상기 펄스에 의해 상기 표면으로 기착됨을 특징으로 하는 방법.5. A method according to claim 1, 2 or 4, characterized in that 0.1 to 10 [mu] g / cm < 2 > of material from the ions or plasma is deposited on the surface by the pulses. 제1항, 제3항 또는 제5항에 있어서, 상기 중합체 표면에 대하여 이온 또는 플라즈마의 펄스를 투사한 후 금속층이 상기 중합체 표면으로 기착되는 것을 특징으로 하는 방법.6. The method of claim 1, wherein the metal layer adheres to the polymer surface after projecting pulses of ions or plasma against the polymer surface. 7. 제7항에 있어서, 상기 중합체 표면에 대하여 이온 또는 플라즈마의 펄스를 투사한 후 금속층이 상기 중합체 표면으로 기착되는 것을 특징으로 하는 방법.8. The method of claim 7, wherein after projecting a pulse of ion or plasma against the polymer surface, a metal layer is deposited on the polymer surface. 유기 중합체, 유리, 세라믹 및 금속으로 주로 구성된 군으로 부터 선택된 표면을 변형시키기 위한 방법으로서, 0.8바 이하의 압력 및 10ns 내지 1ns의 유효펄스지속 시간으로 1mJ/㎠ 내지 103J/㎠의 플루언스에서, 상기 표면에 대하여 1내지 20 유효 펄스 또는 빔으로서 이온 또는 플라즈마를 투사하는 것을 포함하는 방법.A method for modifying a surface selected from the group consisting mainly of organic polymers, glass, ceramics and metals, with a fluence of 1 mJ / cm 2 to 10 3 J / cm 2 with a pressure of 0.8 bar or less and an effective pulse duration of 10 ns to 1 ns And projecting ions or plasma as 1 to 20 effective pulses or beams against the surface. 제12항에 있어서, 상기 표면은 유리를 포함하며, 상기 유리는 상기 이온 또는 플라즈마에 의해 에칭되거나 융삭됨을 특징으로 하는 방법.The method of claim 12, wherein the surface comprises glass and the glass is etched or melted by the ions or plasma. 제1항, 제3항 또는 제5항에 있어서, 상기 중합체 표면은 연속 기포 포움을 포함하며, 상기 포움상에는 상기 이온 또는 플라즈마의 투사에 의해 스킨이 형성됨을 특징으로 하는 방법.6. The method of claim 1, 3 or 5, wherein the polymer surface comprises a continuous foam foam, wherein the skin is formed by the projection of the ion or plasma. 제1항, 제3항 또는 제5항에 있어서, 상기 이온은 동축 플라즈마 가속기에 의해 투사됨을 특징으로 하는 방법.6. The method of claim 1, 3 or 5, wherein the ions are projected by a coaxial plasma accelerator. 제1항, 제3항 또는 제5항에 있어서, 상기 이온은 이온 다이오드에 의해 투사됨을 특징으로 하는 방법.6. The method of claim 1, 3 or 5, wherein the ions are projected by an ion diode. 제7항에 있어서, 상기 이온은 동축 플라즈마 가속기에 의해 투사됨을 특징으로 하는 방법.8. The method of claim 7, wherein the ions are projected by a coaxial plasma accelerator. 제7항에 있어서, 상기 이온은 이온 다이오드에 의해 투사됨을 특징으로 하는 방법.8. The method of claim 7, wherein the ions are projected by an ion diode. 제15항에 있어서, 상기 중합체는 합성 유기 중합체를 포함하며, 상기와 같은 처리과정 후 상기 중합체 표면은 다른 물질에 결합되는 것을 특징으로 하는 방법.The method of claim 15, wherein the polymer comprises a synthetic organic polymer, and wherein the surface of the polymer is bonded to another material after such treatment. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920003796A 1991-03-07 1992-03-06 Method of surface modification by accelerated plasma or ion KR920017791A (en)

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US7/665692 1991-03-07
US07/665,692 US5389195A (en) 1991-03-07 1991-03-07 Surface modification by accelerated plasma or ions

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EP (1) EP0502633B1 (en)
JP (1) JPH04359932A (en)
KR (1) KR920017791A (en)
DE (1) DE69209706T2 (en)
ES (1) ES2085562T3 (en)

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JPH02259063A (en) * 1989-03-31 1990-10-19 Ishikawajima Harima Heavy Ind Co Ltd Formation of metallic film
US4957771A (en) * 1989-07-21 1990-09-18 The United States Of America As Represented By The Secretary Of The Air Force Ion bombardment of insulator surfaces
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JPH04359932A (en) 1992-12-14
US5389195A (en) 1995-02-14
ES2085562T3 (en) 1996-06-01
EP0502633B1 (en) 1996-04-10
EP0502633A2 (en) 1992-09-09
DE69209706T2 (en) 1996-11-28
DE69209706D1 (en) 1996-05-15
EP0502633A3 (en) 1993-04-07

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