KR920013790A - Optical sensor for image sensor and manufacturing method thereof - Google Patents

Optical sensor for image sensor and manufacturing method thereof Download PDF

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Publication number
KR920013790A
KR920013790A KR1019900021250A KR900021250A KR920013790A KR 920013790 A KR920013790 A KR 920013790A KR 1019900021250 A KR1019900021250 A KR 1019900021250A KR 900021250 A KR900021250 A KR 900021250A KR 920013790 A KR920013790 A KR 920013790A
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KR
South Korea
Prior art keywords
manufacturing
optical sensor
conductive film
sensor
transparent conductive
Prior art date
Application number
KR1019900021250A
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Korean (ko)
Other versions
KR940003433B1 (en
Inventor
공향식
이상훈
Original Assignee
김정배
삼성전관 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김정배, 삼성전관 주식회사 filed Critical 김정배
Priority to KR1019900021250A priority Critical patent/KR940003433B1/en
Publication of KR920013790A publication Critical patent/KR920013790A/en
Application granted granted Critical
Publication of KR940003433B1 publication Critical patent/KR940003433B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)

Abstract

내용 없음No content

Description

이미지 센서용 광 센서 및 그의 제조방법Optical sensor for image sensor and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 한 실시예의 단면도2 is a cross-sectional view of one embodiment of the present invention.

Claims (2)

유리 기판상에 전극, 광도전막, 투명 도전막을 적층하여 구성하는 광센서에 있어서, 투명 도전막의 표면을 거칠게 형성한 이미지 센서용 광 센서.An optical sensor comprising an electrode, a photoconductive film, and a transparent conductive film stacked on a glass substrate, wherein the surface of the transparent conductive film is roughly formed. 제1항의 광 센서의 표면을 거칠게 형성하기 위하여 유리 기판에 투명도전막이 형성되는 측 표면을 거칠게 형성하여 전극, 광 도전막, 투명 도전막을 적층하여 형성하는 이미지 센서용 광 센서의 제조 방법.A method of manufacturing an optical sensor for an image sensor, wherein the side surface on which the transparent conductive film is formed is formed on the glass substrate so as to roughly form the surface of the optical sensor of claim 1, wherein the electrode, the optical conductive film, and the transparent conductive film are laminated. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900021250A 1990-12-18 1990-12-18 Light sensor for image sensor KR940003433B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900021250A KR940003433B1 (en) 1990-12-18 1990-12-18 Light sensor for image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900021250A KR940003433B1 (en) 1990-12-18 1990-12-18 Light sensor for image sensor

Publications (2)

Publication Number Publication Date
KR920013790A true KR920013790A (en) 1992-07-29
KR940003433B1 KR940003433B1 (en) 1994-04-22

Family

ID=19308016

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900021250A KR940003433B1 (en) 1990-12-18 1990-12-18 Light sensor for image sensor

Country Status (1)

Country Link
KR (1) KR940003433B1 (en)

Also Published As

Publication number Publication date
KR940003433B1 (en) 1994-04-22

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