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Application filed by 강진구, 삼성전자 주식회사filedCritical강진구
Priority to KR1019900021623ApriorityCriticalpatent/KR920011966A/en
Publication of KR920011966ApublicationCriticalpatent/KR920011966A/en
다공질 RB-SiC의 제조방법Manufacturing method of porous RB-SiC
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 본 발명에 따른 다공질 RB-SiC의 넥(Neck) 성장 과정을 나타내는 모식도이다.1 is a schematic diagram showing a neck growth process of the porous RB-SiC according to the present invention.
Claims (3)
RB-SiC에 존재하는 유리 Si를 고온열처리함으로서 제거한 다음, 대기압 Ar 분위기하에서 열처리하여 기계적 강도를 증가시킴을 특징으로 하는 다공질 RB-SiC의 제조방법.A method for producing a porous RB-SiC characterized in that the glass Si present in the RB-SiC is removed by high temperature heat treatment, and then heat treated under an atmospheric Ar atmosphere.제1항에 있어서, 유리 Si의 제거는 1600℃에서 2시간동안 열처리하여 행함을 특징으로 하는 다공질 RB-SiC의 제조방법.The method for producing porous RB-SiC according to claim 1, wherein the free Si is removed by heat treatment at 1600 ° C. for 2 hours.제1항에 있어서, 기계적 강도를 증가시키기 위한 열처리는 1780℃ 대기압의 Ar 분위기하에서 2시간 동안 열처리하는 것임을 특징으로 하는 다공질 RB-SiC의 제조방법.The method of claim 1, wherein the heat treatment for increasing the mechanical strength is a method for producing a porous RB-SiC, characterized in that the heat treatment for 2 hours in an Ar atmosphere of 1780 ℃ atmospheric pressure.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900021623A1990-12-241990-12-24
Manufacturing method of porous RB-SiC
KR920011966A
(en)