KR920010628B1 - Capacitor - Google Patents
Capacitor Download PDFInfo
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- KR920010628B1 KR920010628B1 KR1019890020682A KR890020682A KR920010628B1 KR 920010628 B1 KR920010628 B1 KR 920010628B1 KR 1019890020682 A KR1019890020682 A KR 1019890020682A KR 890020682 A KR890020682 A KR 890020682A KR 920010628 B1 KR920010628 B1 KR 920010628B1
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- foil
- electrolyte
- phosphoric acid
- minutes
- voltage
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- 239000003990 capacitor Substances 0.000 title claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000011888 foil Substances 0.000 claims abstract description 24
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 15
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001361 adipic acid Substances 0.000 claims abstract description 4
- 235000011037 adipic acid Nutrition 0.000 claims abstract description 4
- 238000002425 crystallisation Methods 0.000 claims abstract 2
- 239000000126 substance Substances 0.000 claims description 22
- 239000003792 electrolyte Substances 0.000 claims description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- RATMLZHGSYTFBL-UHFFFAOYSA-N azanium;6-hydroxy-6-oxohexanoate Chemical compound N.OC(=O)CCCCC(O)=O RATMLZHGSYTFBL-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 2
- 239000010452 phosphate Substances 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 22
- FLDCSPABIQBYKP-UHFFFAOYSA-N 5-chloro-1,2-dimethylbenzimidazole Chemical compound ClC1=CC=C2N(C)C(C)=NC2=C1 FLDCSPABIQBYKP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000001741 Ammonium adipate Substances 0.000 abstract description 4
- 235000019293 ammonium adipate Nutrition 0.000 abstract description 4
- 239000005030 aluminium foil Substances 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000007598 dipping method Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- WNLRTRBMVRJNCN-UHFFFAOYSA-L adipate(2-) Chemical compound [O-]C(=O)CCCCC([O-])=O WNLRTRBMVRJNCN-UHFFFAOYSA-L 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008029 eradication Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
제1도는 본 발명에 의한 화성(Forming)시 용량(Capacitance)대 화성 전압 그래프.1 is a graph of capacitance versus harmonic voltage when forming according to the present invention.
제2도는 종래 방법에 의해 화성시 용량대 화성 전압 그래프.2 is a graph of capacitance vs. Mars voltage at Mars by the conventional method.
본 발명은 알루미늄(Aluminium : 이하 Al이하 함) 전해 콘덴서에 화성박(化成箔)을 제조하는 공정에서 에칭(Etching)박에 유전체 피막을 형성시킬때 형성되는 산화알루미늄 (Al2O3)유전체 피막의 두께와 밀도를 조정하여 화성박 단위 면적당 용량을 증가시키기 위한 산화 알루미늄 결정화 방법에 관한 것이다.The present invention relates to an aluminum oxide (Al 2 O 3 ) dielectric film formed when a dielectric film is formed on an etching foil in a process of manufacturing a chemical foil on an aluminum electrolytic capacitor. The present invention relates to a method for crystallizing aluminum oxide to increase the capacity per unit area of chemical foil by adjusting the thickness and density of the oxide.
일반적으로 화성박의 단위 면적당 용량은 전해 콘덴서용 Al에칭박 화성시사용되는 전해질에 의해서 큰 차이가 나타난다.In general, the capacity per unit area of Hwaseong foil varies greatly depending on the electrolyte used for Al etching foil for electrolytic capacitors.
화성시 형성되는 산화 알루미늄 유정체 피막이 내전압을 갖게 하기 위해서는 일반적으로 전해질로 인산(Phosporic Acid) 또는 인산과 아디피산 암모늄(Ammonium Adipate)를 조합한 형태로 사용되는데 이때 형성되는 유전체 피막은 무정형(Amorphous)의 산화 알루미늄이 된다.In order to have the withstand voltage of the aluminum oxide film formed during chemical formation, it is generally used in the form of phosphate or phosphoric acid and ammonium adipate in the form of an electrolyte. It becomes aluminum oxide.
상기와 같이 산화 알루미늄이 무정형 상태로 존재하게 되면 산화 피막의 밀도(density)는 감소하고 두께는 증가하므로 다음 식(1)에 의해 화성박의 용량은 감소한다.When the aluminum oxide is present in an amorphous state as described above, the density of the oxide film decreases and the thickness thereof increases, so that the capacity of the chemical foil decreases according to the following equation (1).
여기서 C는 박용량, d는 산화알루미늄층의 두께, S는 대전면적, ε은 유전체 피막이 유전율을 나타낸다. 이렇게 용량이 감소하는 원인은 에칭박 위에 산화 알미늄 형성 과정에서 화성박이 내수성을 갖도록 하기 위해 전해질에 첨가하는 인산(H3PO4)의 첨가 방법에 따른 것이다.Where C is the thin capacitance, d is the thickness of the aluminum oxide layer, S is the charge area, and ε is the dielectric film dielectric constant. The reason for the decrease in capacity is due to the addition method of phosphoric acid (H 3 PO 4 ) added to the electrolyte in order for the chemical foil to have water resistance during the formation of aluminum oxide on the etching foil.
즉 종래에는 인산을 처음부터 전해질에 미량을 첨가하거나 인산 수용액 전해질을 사용하였기 때문에 화성박의 용량이 감소되었었다.That is, in the past, since the phosphoric acid was added to the electrolyte in a small amount or the aqueous solution of the phosphoric acid solution was used, the capacity of the chemical foil decreased.
여기서 종래의 화성방법 즉 산화 알루미늄 형성 방법을 살펴보면 전해질로 아디핀산암모늄(Ammonium Adipate)50g/ℓ, 인산(H3PO4) 0.5㎖/ℓ혼합용액을 사용하였고 비저항(Spec-ific Resistance)은 16.5±1.5Ω.㎝로 60℃에서 화성시켰으며 화성전압 도달후 5분간 유지시킨 후 500℃에서 2분간 열처리하였다. 열처리 후 다시 상기 전해질로 화성시켰으며 화성 전압 도달 후 2분간 그 상태로 유지하여서 화성을 완결시켰던것이다.Here, the conventional chemical formation method, that is, the method of forming aluminum oxide, used a mixture of ammonium adipate (50 g / L) and 0.5 mL / L phosphoric acid (H 3 PO 4 ) as an electrolyte, and the specific resistance was 16.5. It was chemically synthesized at 60 ℃ with ± 1.5Ω.㎝ and maintained for 5 minutes after reaching the chemical voltage and then heat treated at 500 ℃ for 2 minutes. After the heat treatment, it was converted to the electrolyte again, and maintained at that state for 2 minutes after reaching the voltage to complete the conversion.
본 발명은 상기와 같은 인산(H3PO4)계 전해질 사용방법에 따른 화성박 용량 감소원인을 제거하고 용량 증가를 위해 화성시 에칭박에 형성되는 산화 알루미늄을 결정화시키는데 본 발명의 목적이 있는 것이다.The present invention has the object of the present invention to crystallize the aluminum oxide formed in the etching foil during chemical removal to remove the cause of reducing the ignition foil capacity according to the method of using the phosphoric acid (H 3 PO 4 ) -based electrolyte as described above.
본 발명은 알루미늄 전해 콘덴서용 화성박의 용량을 증가시키기 위해 기준의 전해질 사용방법을 변경하여 알루미늄 산화피막을 결정화 한다.The invention crystallizes the aluminum oxide film by changing the standard electrolyte usage in order to increase the capacity of the chemical foil for aluminum electrolytic capacitors.
본 발명에서의 전해질 사용 방법은 다음과 같다.The electrolyte use method of the present invention is as follows.
첫째 : 아디핀 암모늄(Ammonium Adipate)와 아다핀산(Adipic Acid)혼합 용액을 화성 전합 상승시까지의 초기 전해질로 사용한다.First, a mixture of adimonium adipate and adipic acid is used as the initial electrolyte until the rise of the chemical synthesis.
둘째 : 전압을 인가하지 않은 상태에서 3% 인산(H3PO4)에 일정온도에서 일정시간동안 침적시킨다.Secondly, it is immersed in 3% phosphoric acid (H 3 PO 4 ) for a certain time at a constant temperature without voltage applied.
세째 : 전압인가 상태에서 아다핀산 암모늄과 인산 혼합 용액을 전해질로 사용한다. 상기한 바와 같이 본 발명은 화성 공정→인산처리 공정→화성공정→열처리 공정→화성 공정의 순서로 수행되는 것으로 각 고정별로 설명하면 다음과 같다.Third: ammonium adaphosphate and phosphoric acid mixed solution is used as electrolyte under voltage application. As described above, the present invention is performed in the order of the chemical conversion process → phosphoric acid treatment process → chemical conversion process → heat treatment process → chemical conversion process.
제1공정 : 알루미늄 에칭박 화성용의 전해질로 아디핀산 암모늄 50g/1 아다핀산 5g/1의 혼합용액을 사용한다. 비저항(Specific Resistance) 15.5±5Ω.㎝에서 60℃를 유지해주며 화성전압에 도달하였을때 이상태로 5분간 유지하여 준다.First step: A mixed solution of 50 g / 1 adipic acid 5 g / 1 of ammonium adipic acid is used as an electrolyte for aluminum etching thinning. Specific Resistance Maintain 60 ℃ at 15.5 ± 5Ω.㎝ and keep it in this state for 5 minutes when reaching the Mars voltage.
제2공정 : 3% 인산 용액에 전압을 인가하지 않은 상태로 70℃에서 2분간 침적시킨다.2nd step: It is immersed for 2 minutes at 70 degreeC, without applying voltage to 3% phosphoric acid solution.
제3공정 : 아디핀산암모늄 50g/1와 75% 인산 0.5㎖/1혼합 용액을 전해질로 한다. 비저항 16.5±1.5Ω.㎝에서 60℃를 유지해주며 화성 전압에 도달했을때 이 상태를 2분간 유지시켜 준다.The third step: 50g / 1 ammonium adipic acid and 0.5ml / 1 mixture of 75% phosphoric acid were used as electrolyte. Maintain 60 ℃ at specific resistance 16.5 ± 1.5Ω.㎝ and maintain this state for 2 minutes when reaching Mars voltage.
제4공정 : 500℃에서 2분간 열처리한다.4th step: heat-process for 2 minutes at 500 degreeC.
제5공정 :상기 3공정의 화성 공정을 반복한다.5th process: The chemical conversion process of said 3 processes is repeated.
[실시예]EXAMPLE
본 발명을 실시예에 의해 설명하면 다음과 같다.The present invention is explained by way of examples as follows.
표 1은 3가지 종류의 에칭박, (1) 일본 저압용 고배율 에칭박 (2) 일본 고압용 고배율 에칭박 (3) 일본 저압고압용 고배율 에칭박에 전압력으로 화성을 실시했을때 각 화성전압에서의 단위 면적당 화성박 용량을 본 발명에 따른 실시에와 기존화성 방법에 의해 비교예를 비교한 것이다. 이때 용량은 ㎌/d㎡단위로 나타내었다.Table 1 shows three types of etching foils, (1) high-magnification etching foil for low pressure in Japan, (2) high-magnification etching foil for high pressure in Japan, and (3) high magnification etching foil for low pressure and high pressure in Japan. The capacity of the chemical foil per unit area of is compared with the comparative example by the method according to the present invention and the existing method. In this case, the capacity is expressed in units of mm /
본 발명에 따른 화성 방법에 의한 에칭박멸 화성박 용량대 화성 전압의 비교 도표는 첨부도면 제1도의 그래프에 표시되었으며종래의 화성방법에 의한 에칭박별 화성박 용량대 화성전압의 비교 도표는 첨부 도면 제2도의 그래프에 표시되었다. 즉 양 도표를 살펴보면 14V 이하의 낮은 전압에서는 화성 방법에 따른 화성박 용량의 차가 많지 않지만 50V이상의 높은 전압에서는 용량 증가가 크게 나타남을 확인할 수 있었다. 이러한 본 발명의 용량 증가 결과로 110V이상에서의 화성박 용량은 기존 방법 대비 약 40% 정도의 원가절감효과를 얻을 수 있다.The comparison chart of etching eradication chemical foil capacity versus chemical voltage by the chemical conversion method according to the present invention is shown in the graph of FIG. 1 and the comparison chart of chemical foil capacity versus chemical voltage by etching foil according to the conventional chemical method is shown in the accompanying drawings. Shown in the graph of 2 degrees. In other words, it can be seen that at low voltages below 14V, there is not much difference in the capacity of Mars foil according to the Mars method. As a result of the increased capacity of the present invention, the Hwasung foil capacity at 110V or more can obtain a cost reduction effect of about 40% compared to the conventional method.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890020682A KR920010628B1 (en) | 1989-12-31 | 1989-12-31 | Capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890020682A KR920010628B1 (en) | 1989-12-31 | 1989-12-31 | Capacitor |
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| Publication Number | Publication Date |
|---|---|
| KR910013333A KR910013333A (en) | 1991-08-08 |
| KR920010628B1 true KR920010628B1 (en) | 1992-12-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019890020682A KR920010628B1 (en) | 1989-12-31 | 1989-12-31 | Capacitor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9166210B2 (en) | 2010-01-26 | 2015-10-20 | Samsung Sdi Co., Ltd. | Case for secondary battery and method of manufacturing case |
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1989
- 1989-12-31 KR KR1019890020682A patent/KR920010628B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9166210B2 (en) | 2010-01-26 | 2015-10-20 | Samsung Sdi Co., Ltd. | Case for secondary battery and method of manufacturing case |
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| Publication number | Publication date |
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| KR910013333A (en) | 1991-08-08 |
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