KR920008463U - Semiconductor laser diode with double current blocking layer - Google Patents

Semiconductor laser diode with double current blocking layer

Info

Publication number
KR920008463U
KR920008463U KR2019900016177U KR900016177U KR920008463U KR 920008463 U KR920008463 U KR 920008463U KR 2019900016177 U KR2019900016177 U KR 2019900016177U KR 900016177 U KR900016177 U KR 900016177U KR 920008463 U KR920008463 U KR 920008463U
Authority
KR
South Korea
Prior art keywords
semiconductor laser
laser diode
blocking layer
current blocking
double current
Prior art date
Application number
KR2019900016177U
Other languages
Korean (ko)
Other versions
KR960007301Y1 (en
Inventor
고현철
Original Assignee
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지전자 주식회사 filed Critical 엘지전자 주식회사
Priority to KR2019900016177U priority Critical patent/KR960007301Y1/en
Publication of KR920008463U publication Critical patent/KR920008463U/en
Application granted granted Critical
Publication of KR960007301Y1 publication Critical patent/KR960007301Y1/en

Links

KR2019900016177U 1990-10-24 1990-10-24 Semiconductor laser diode with multiple current block KR960007301Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019900016177U KR960007301Y1 (en) 1990-10-24 1990-10-24 Semiconductor laser diode with multiple current block

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019900016177U KR960007301Y1 (en) 1990-10-24 1990-10-24 Semiconductor laser diode with multiple current block

Publications (2)

Publication Number Publication Date
KR920008463U true KR920008463U (en) 1992-05-20
KR960007301Y1 KR960007301Y1 (en) 1996-08-28

Family

ID=19304557

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019900016177U KR960007301Y1 (en) 1990-10-24 1990-10-24 Semiconductor laser diode with multiple current block

Country Status (1)

Country Link
KR (1) KR960007301Y1 (en)

Also Published As

Publication number Publication date
KR960007301Y1 (en) 1996-08-28

Similar Documents

Publication Publication Date Title
DE69029340D1 (en) Semiconductor laser with five-element compound semiconductor
DE69220434D1 (en) Semiconductor laser
DE69331177T2 (en) Semiconductor component with epitaxial multilayer mirror
DE69218802D1 (en) Semiconductor laser
DE69212938D1 (en) Semiconductor laser
DE69120185D1 (en) Semiconductor laser
DE69117488D1 (en) SEMICONDUCTOR LASER WITH DISTRIBUTED FEEDBACK
DE69432345D1 (en) Semiconductor diode laser
DE69223737T2 (en) Semiconductor laser
DE69217679D1 (en) Semiconductor laser
DE69227403T2 (en) Semiconductor laser
DE69116743D1 (en) Phase-shifted semiconductor laser with distributed feedback
DE69110605D1 (en) Semiconductor laser with distributed feedback.
DE69107845D1 (en) Laser diode structure.
DE69226027D1 (en) Semiconductor laser
DE69215747D1 (en) Semiconductor laser diode
DE69309011D1 (en) Semiconductor laser with optimized resonator
DE69115555D1 (en) Semiconductor laser
DE69131034T2 (en) Semiconductor laser with buried stripe structure
DE69204495D1 (en) Semiconductor laser with saturable absorber.
DE69209426D1 (en) Semiconductor laser
DE69217466D1 (en) Semiconductor laser with reduced temperature dependence
DE69210262D1 (en) Semiconductor diode laser with monitor diode
DE69327135D1 (en) Semiconductor arrangement with several semiconductor chips
DE69529490D1 (en) Semiconductor arrangement with mesa structure

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
REGI Registration of establishment
FPAY Annual fee payment

Payment date: 20020726

Year of fee payment: 7

LAPS Lapse due to unpaid annual fee