KR920008453U - High withstand voltage PMOS transistor - Google Patents

High withstand voltage PMOS transistor

Info

Publication number
KR920008453U
KR920008453U KR2019900016420U KR900016420U KR920008453U KR 920008453 U KR920008453 U KR 920008453U KR 2019900016420 U KR2019900016420 U KR 2019900016420U KR 900016420 U KR900016420 U KR 900016420U KR 920008453 U KR920008453 U KR 920008453U
Authority
KR
South Korea
Prior art keywords
pmos transistor
withstand voltage
high withstand
voltage pmos
transistor
Prior art date
Application number
KR2019900016420U
Other languages
Korean (ko)
Other versions
KR970000201Y1 (en
Inventor
김대병
Original Assignee
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사 filed Critical 금성일렉트론 주식회사
Priority to KR2019900016420U priority Critical patent/KR970000201Y1/en
Publication of KR920008453U publication Critical patent/KR920008453U/en
Application granted granted Critical
Publication of KR970000201Y1 publication Critical patent/KR970000201Y1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR2019900016420U 1990-10-29 1990-10-29 Pmos transistor KR970000201Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019900016420U KR970000201Y1 (en) 1990-10-29 1990-10-29 Pmos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019900016420U KR970000201Y1 (en) 1990-10-29 1990-10-29 Pmos transistor

Publications (2)

Publication Number Publication Date
KR920008453U true KR920008453U (en) 1992-05-20
KR970000201Y1 KR970000201Y1 (en) 1997-01-09

Family

ID=19304723

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019900016420U KR970000201Y1 (en) 1990-10-29 1990-10-29 Pmos transistor

Country Status (1)

Country Link
KR (1) KR970000201Y1 (en)

Also Published As

Publication number Publication date
KR970000201Y1 (en) 1997-01-09

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