KR920008453U - High withstand voltage PMOS transistor - Google Patents
High withstand voltage PMOS transistorInfo
- Publication number
- KR920008453U KR920008453U KR2019900016420U KR900016420U KR920008453U KR 920008453 U KR920008453 U KR 920008453U KR 2019900016420 U KR2019900016420 U KR 2019900016420U KR 900016420 U KR900016420 U KR 900016420U KR 920008453 U KR920008453 U KR 920008453U
- Authority
- KR
- South Korea
- Prior art keywords
- pmos transistor
- withstand voltage
- high withstand
- voltage pmos
- transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019900016420U KR970000201Y1 (en) | 1990-10-29 | 1990-10-29 | Pmos transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019900016420U KR970000201Y1 (en) | 1990-10-29 | 1990-10-29 | Pmos transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920008453U true KR920008453U (en) | 1992-05-20 |
KR970000201Y1 KR970000201Y1 (en) | 1997-01-09 |
Family
ID=19304723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR2019900016420U KR970000201Y1 (en) | 1990-10-29 | 1990-10-29 | Pmos transistor |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970000201Y1 (en) |
-
1990
- 1990-10-29 KR KR2019900016420U patent/KR970000201Y1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR970000201Y1 (en) | 1997-01-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
REGI | Registration of establishment | ||
FPAY | Annual fee payment |
Payment date: 20041230 Year of fee payment: 9 |
|
EXPY | Expiration of term |