KR920006789A - Manufacturing method of liquid crystal display device - Google Patents

Abstract

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Description

Manufacturing method of liquid crystal display device

As this is a public information case, the full text was not included.

1 is an explanatory diagram of a manufacturing method of a liquid crystal display device according to the present invention;

FIG. 2A is a plan view showing main parts of one pixel of a liquid crystal display of an active matrix type color liquid crystal display device to which the present invention is applied;

2B is a cross-sectional view of the portion cut along the cutting line II B to IIB of FIG. 2A and the seal peripheral portion;

2C is a cross-sectional view taken along the line II C to IIC of FIG. 2A,

FIG. 2D is a cross-sectional view showing the gate terminal portion of the liquid crystal display shown in FIG. 2A, FIG. 2E is a cross-sectional view showing the drain terminal portion of the liquid crystal display shown in FIG.

3 is a plan view of essential parts of a liquid crystal display in which a plurality of pixels shown in FIG. 2A are arranged.

Claims (2)

Forming a plurality of gate lines and interconnect lines to electrically short the gate lines, anodizing the gate lines with voltage applied to the interconnect lines, and source and drain of the transistors And removing the mutual coupling line to electrically separate the gate line after forming the electrode. By providing a transparent glass substrate, and by depositing a material containing a crop on the substrate and selectively removing the material to form a plurality of gate terminals and interconnection lines on the outside of the gate terminal at the same time to the electrical Forming a gate electrode made of aluminum so that each of the transistors is electrically connected to the gate terminal, anodizing the gate electrode while applying a bilateral oxidation voltage to the interconnect line, Masking the gate terminal and the interconnect line to form an anodized oxide film on the gate electrode, depositing a semiconductor on the anodized oxide film to form a semiconductor layer, and selectively forming the semiconductor layer. And source and drain electrodes of the transistor on the semiconductor layer. Forming an alignment layer for liquid crystal on the surface and rubbing the alignment layer; and removing the interconnection line to release the gate terminal from an electrical short circuit state. ※ Note: This is to be disclosed by the original application.